scholarly journals Field effect transistor based on protons as charge carriers

2010 ◽  
Vol 5 ◽  
pp. 1368-1371
Author(s):  
J. Matovic ◽  
N. Adamovic ◽  
Z. Jakšić ◽  
U. Schmid
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Effect Transistor

Field effect transistor based on ions as charge carriers

2012 ◽  
Vol 170 ◽  
pp. 137-142 ◽  
Author(s):  
J. Matovic ◽  
N. Adamovic ◽  
F. Radovanovic ◽  
Z. Jakšić ◽  
U. Schmid
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Effect Transistor

scholarly journals Исследование подвижности носителей заряда в слоях нанокристаллов PBS методом полевого транзистора

2022 ◽  
Vol 56 (2) ◽  
pp. 236
Author(s):  
П.С. Парфенов ◽  
Н.В. Бухряков ◽  
Д.А. Онищук ◽  
А.А. Бабаев ◽  
А.В. Соколова ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ambient Air ◽  
Inert Atmosphere ◽  
Charge Carriers ◽  
Mobility Of Charge Carriers ◽  
Tetrabutylammonium Iodide ◽  
Effect Transistor ◽  
The Difference ◽  
Current Flows

The field-effect transistor method is used to study the mobility of charge carriers in layers of lead sulfide nanocrystals with ligands of tetrabutylammonium iodide and 1,2-ethanedithiol used to create solar cells. The difference between the operating of a transistor in ambient air and in an inert atmosphere is demonstrated. It is shown that, in the ambient air, the processes of charging nanocrystals are activated when current flows, and the influence of the polarization of the interface of nanocrystals and the insulator on the measurement of the mobility is analyzed. Different reactions of the layers with ligands to light have been demonstrated, showing a significant oxidation of the surface of nanocrystals treated with 1,2-ethanedithiol.

Three Sectional Drift-Diffusion Mathematical Model Of The Field Effect Transistor With A Schottky Barrier

2015 ◽  
Vol 10 (1) ◽  
pp. 57-62
Author(s):  
Sergey Savelkaev ◽  
Valerik Airapetyan ◽  
Vladimir Litovchenko
Keyword(s):  
Mathematical Model ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Drift Diffusion ◽  
Flat Area ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor

Three sectional drift-diffusion mathematical model of the field effect transistor with a Schottky barrier is proposed. It takes into account the accumulation of charge carriers in the additionally introduced third section, which significantly improves the accuracy of the calculation of the current-voltage characteristics flat area of the transistors. This is important for developers of these transistors, as well as for amplifying and autogenerating microwave devices constructors.

Photogenerated charge carriers in double-layer organic field-effect transistor

2013 ◽  
Vol 175 ◽  
pp. 47-51 ◽  
Author(s):  
Jan Jakabovic ◽  
Martin Weis ◽  
Jaroslav Kovac ◽  
Daniel Donoval ◽  
Martin Donoval ◽  
...  
Keyword(s):  
Double Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Carriers ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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