Energy dispersive X-ray reflectivity to study phase transitions in thin films

2004 ◽  
Vol 70 (4-5) ◽  
pp. 611-617 ◽  
Author(s):  
M. Bhattacharya ◽  
M.K. Mukhopadhyay ◽  
S. Pal ◽  
M.K. Sanyal
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Energy Dispersive ◽  
Study Phase ◽  
X Ray

scholarly journals 3D-structural Analysis of Epitaxially-grown Organic Thin Films by a Newly Developed Energy Dispersive X-ray Diffraction System.

Hyomen Kagaku ◽  
1998 ◽  
Vol 19 (4) ◽  
pp. 259-264
Author(s):  
Kenji ISHIDA ◽  
Toshihisa HORIUCHI ◽  
Kazumi MATSUSHIGE MATSUSHIGE
Keyword(s):  
Thin Films ◽  
Structural Analysis ◽  
Organic Thin Films ◽  
Energy Dispersive ◽  
X Ray Diffraction ◽  
X Ray

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Compositional and Texture Analysis of Tantalum Thin Films by Energy Dispersive X-Ray Analysis

1973 ◽  
Vol 27 (2) ◽  
pp. 99-102 ◽  
Author(s):  
H. S. deBen ◽  
Barret Broyde
Keyword(s):  
Thin Films ◽  
Texture Analysis ◽  
Diffraction Method ◽  
Preferred Orientation ◽  
Energy Dispersive ◽  
X Ray ◽  
Quantitative Measurements

Quantitative measurements of concentrations are given for the phases present in undoped tantalum thin films by the use of energy-dispersive x-ray detectors. This diffraction method can also yield the extent of preferred orientation.

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

scholarly journals An in situ cell to study phase transitions in individual aerosol particles on a substrate using scanning transmission x-ray microspectroscopy

2010 ◽  
Vol 81 (11) ◽  
pp. 113706 ◽  
Author(s):  
T. Huthwelker ◽  
V. Zelenay ◽  
M. Birrer ◽  
A. Krepelova ◽  
J. Raabe ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Aerosol Particles ◽  
Study Phase ◽  
X Ray ◽  
Scanning Transmission
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