Models for the electrical characterization of high concentration photovoltaic cells and modules: A review

2013 ◽  
Vol 26 ◽  
pp. 752-760 ◽  
Author(s):  
P. Rodrigo ◽  
E.F. Fernández ◽  
F. Almonacid ◽  
P.J. Pérez-Higueras
Keyword(s):  
Photovoltaic Cells ◽  
Electrical Characterization ◽  
High Concentration

Electrical Characterization of GaN Based Ultraviolet and Blue Light Emitting Diodes

2006 ◽  
Vol 955 ◽  
Author(s):  
Alphonse-Marie Kamto Tegueu ◽  
Okechukwu Akpa ◽  
Arindra Guha ◽  
Kalyankumar Das
Keyword(s):  
Light Emitting Diodes ◽  
Deep Level ◽  
Electrical Characterization ◽  
High Concentration ◽  
Light Emitting ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Double Heterojunction ◽  
Uv Leds

ABSTRACTGallium nitride based ultraviolet (UV) and blue AlGaN/GaN/AlGaN double heterojunction structure light emitting diodes (LEDs) were electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements as a function of frequency. An analysis of logarithmic plots of the forward I-V characteristics indicated that current in these diodes was proportional to Vx, as opposed to eqV/nkT, where x was observed to be either 1 or 2 at low biases increasing to as high as 40 at higher biases. The dependence of diode forward current on Vx is likely to be due to space charge limited current in the presence of a high concentration of deep level states in the bandgap. The concentration of deep states and their position in the band gap were extracted from these logarithmic plots. For both the blue and the UV LEDs, several closely spaced levels were obtained, located most likely in the range between EV and EV + 0.5 eV with concentrations of the order of 1016/cm3 to 1017/cm3. Capacitance-voltage measurements as a function of frequency (200 Hz - 1 MHz) at room temperature yielded a density of approximately 1 × 1015 cm−3 located at 0.46 eV above the valence band-edge for both the UV and blue LED. Even though the location of these deep states from the I-V and C-V measurements are within the same range, the two orders magnitude difference in the concentration of deep states is not well understood at this point.

Infrared ellipsometric characterization of SixNy films on textured Si photovoltaic cells

2008 ◽  
Author(s):  
Mario Fernando. Saenger ◽  
Martin Schädel ◽  
Tino Hofmann ◽  
James Hilfiker ◽  
Jianing Sun ◽  
...  
Keyword(s):  
Photovoltaic Cells ◽  
Ellipsometric Characterization

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Management and engineering solutions to improve stripping equipment efficiency in Chernogorksy open pit mine

2018 ◽  
pp. 36-48
Author(s):  
G. N. Shapovalenko ◽  
S. N. Radionov ◽  
V. V. Gorbunov ◽  
V. A. Khazhiev ◽  
V. Yu. Zalyadnov ◽  
...  
Keyword(s):  
Open Pit Mine ◽  
Open Pit ◽  
High Concentration ◽  
Open Pit Mines ◽  
Blasting Operation ◽  
Internal Dump ◽  
Mining Conditions ◽  
Mining Front ◽  
Comparison Of Equipment

Chernogosky open pit mine integrates truck-and-shovel system of mining with overburden rehandling to internal dump with a set of walking excavators for rehandling of overburden to mined-out area of the pit. It is possible to improve efficiency of stripping in the conditions of Chernogorsky OPM by reducing percentage of stripping with more expensive handling system. The relevant research and solutions to this effect are presented in this article. Comparative characterization of mining conditions and parameters of mining systems applied is given for open pit mines Chernogorsky, Turnui, Nazarovsky, Vostochno-Beisky and Izykh. The comparative analysis points at the need to account for difficulty of mining and process sites in comparison of equipment productivity. High concentration of mining machines, which is conditioned by narrow mining front and simultaneous operation of five faces, as well as blasting operation implemented every 1-2 days, are recognized as the main constraints of excavator capacity in mining with direct dumping in Chernogorsky open pit mine. The management and engineering solutions implemented in the mine and resulted in higher efficiency of draglines are described.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

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