The development of radio frequency magnetron sputtered p-type nickel oxide thin film field-effect transistor device combined with nucleic acid probe for ultrasensitive label-free HIV-1 gene detection

Abstract Devices based on semiconducting nanowires (NWs) are functioning as highly sensitive and selective sensors for the label-free detection of biological and chemical species. This paper demonstrates a novel back-gated silicon NW field effect transistor (NWFET) for gene detection. The fabricated NWFET was employed as the biomolecule sensor for the early, real-time, and label-free screening of hepatitis B virus (HBV) X gene. The DNA fragment in HBV demonstrates the linearity from 10 fM to 1 pM, of which the detection limit is estimated to be about 3.2 fM. The obtained results also show that the NW-based sensor can distinguish the difference between the complementary and 1-base mismatch DNA. The back-gated NW FET exhibits a label-free, highly sensitive, and selective biosensor for gene detection, which also provides a possibility of multiple chemical and biological species detection with sensor array in an integrated chip.

Download Full-text

Applications of Field Effect Transistor Biosensors Integrated in Microfluidic Chips

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2020.3138 ◽

2020 ◽

Vol 12 (4) ◽

pp. 427-445

Author(s):

Lemeng Chao ◽

Huanhuan Shi ◽

Kaixuan Nie ◽

Bo Dong ◽

Jiafeng Ding ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

High Sensitivity ◽

Cell Detection ◽

Microfluidic Chips ◽

Label Free ◽

Gene Detection ◽

Nano Technology ◽

Effect Transistor ◽

And Performance

With the progress of micro-nano technology, the integration of microfluidic technology with a field effect transistor (FET) sensor has made portable biosensing devices of miniaturized structure available. As compared to traditional biosensors that requires large equipment and anti-interfering detection, FET biosensors integrated in microfluidic chips are fully-closed devices with the advantages of high sensitivity and accurate target capturing. Meanwhile FET biosensors integrated in microfluidic chips can be prepared by a simple, batch-produced manufacturing process to achieve label-free electrical detection. Herein, the progress of the FET biosensors integrated in microfluidic chips is reviewed in terms of sensing principle, configuration, and performance. Especially, the applications of these integrated biosensors in the areas of cell detection, gene detection, biomacromolecule detection, ion detection and pH detection are highlighted. This review provides a certain guiding role in the design and development of FET-based biosensors.

Download Full-text

Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b05479 ◽

2015 ◽

Vol 7 (38) ◽

pp. 21263-21269 ◽

Cited By ~ 26

Author(s):

Jin-Woo Han ◽

Taiuk Rim ◽

Chang-Ki Baek ◽

M. Meyyappan

Keyword(s):

Thin Film ◽

Low Power ◽

Tin Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Nanowire ◽

Oxide Thin Film ◽

Two Dimensional ◽

One Dimensional ◽

Effect Transistor

Download Full-text

Performance Enhanced Carbon Nanotube Films by Mechanical Pressure for a Transparent Metal Oxide Thin Film Field Effect Transistor

Electrochemical and Solid-State Letters ◽

10.1149/1.3505361 ◽

2011 ◽

Vol 14 (2) ◽

pp. H76 ◽

Cited By ~ 8

Author(s):

Joohee Jeon ◽

Tae Il Lee ◽

Ji-Hyuk Choi ◽

Jyoti Prakash Kar ◽

Won Jin Choi ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Thin Film ◽

Mechanical Pressure ◽

Metal Oxide Thin Film ◽

Effect Transistor ◽

Nanotube Films

Download Full-text

Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

East European Journal of Physics ◽

10.26565/2312-4334-2020-2-08 ◽

2020 ◽

Keyword(s):

Thin Film ◽

Field Effect ◽

Field Effect Transistor ◽

Annealing Temperature ◽

Chemical Vapour ◽

Novel Device ◽

Channel Layer ◽

Effect Transistor ◽

P Type ◽

Type Conduction

The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers and hence limit the achievement of the threshold voltage for a field effect transistor operation. Tuning of SnS conductivity for transistor application is of emerging interest for novel device operation. SnS thin film semiconductors of 0.4 thickness were deposited using Aerosol assisted chemical vapour deposition and annealed in open air at annealing temperatures of150, 200, 250, 300 and 350 . Variation of the annealing temperature from 150 through 250 enhances the crystallinity of the annealed thin film samples by increasing the number of crystallites of the annealed films which is also buttress by the decreasing values of FWHM. However a further decrease in crystallite size at higher annealing temperature of 300 to 350 was observed which could be attributed to the fragmentation of clusters of crystallites at higher annealing temperature. Increase in annealing temperature increases grain size leading to the reduction in grain boundaries and potential barrier thereby changing the structure and phase of the films which in essence affects the electrical conductivity of the SnS thin films. The films annealed at 250 exhibited optimum conductivity. The average hall coefficients of the samples deposited at 150 to 250 were positive which indicates that the films annealed at this temperature range are of p type conduction while the average hall coefficients of the samples deposited at 300 and 350 were negative indicating that the films are of n type conduction. The conductivity change is essential for the use of SnS as a semiconductor channel layer especially in a field effect transistor where the device can be tuned to work as a p type or n type semiconductor channel layer.

Download Full-text