Recessed-anode AlGaN/GaN diode with a high Baliga's FOM by combining a p-GaN cap layer and an anode-connected p-GaN buried layer
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2005 ◽
Vol 26
(1)
◽
pp. 5-7
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2005 ◽
Vol 22
(12)
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pp. 1264-1273
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2002 ◽
Vol 41
(Part 1, No. 4B)
◽
pp. 2559-2562
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