Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method

2016 ◽  
Vol 126 ◽  
pp. 136-142 ◽  
Author(s):  
Yong Hyeon Shin ◽  
Ilgu Yun
Keyword(s):  
Analytical Model ◽  
Modeling Method ◽  
Double Gate ◽  
Subthreshold Region ◽  
Macroscopic Modeling ◽  
Random Dopant Fluctuation ◽  
Double Gate Mosfet ◽  
Random Dopant

Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

2013 ◽  
Vol 13 (5) ◽  
pp. 500-510 ◽  
Author(s):  
Rajni Gautam ◽  
Manoj Saxena ◽  
R.S. Gupta ◽  
Mridula Gupta
Keyword(s):  
Low Power ◽  
Analytical Model ◽  
High Sensitivity ◽  
Double Gate ◽  
Double Gate Mosfet

Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

2017 ◽  
Vol 64 (4) ◽  
pp. 1433-1440 ◽  
Author(s):  
Yong Hyeon Shin ◽  
Sungwoo Weon ◽  
Daesik Hong ◽  
Ilgu Yun
Keyword(s):  
Analytical Model ◽  
Double Gate ◽  
Subthreshold Region

Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model

2013 ◽  
Vol 60 (2) ◽  
pp. 884-886 ◽  
Author(s):  
Mike Schwarz ◽  
Thomas Holtij ◽  
Alexander Kloes ◽  
Benjamín Iniguez
Keyword(s):  
Schottky Barrier ◽  
Analytical Model ◽  
Double Gate ◽  
Two Dimensional ◽  
Performance Study ◽  
Double Gate Mosfet
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