Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2235146 ◽

2013 ◽

Vol 60 (2) ◽

pp. 884-886 ◽

Author(s):

Mike Schwarz ◽

Thomas Holtij ◽

Alexander Kloes ◽

Benjamín Iniguez

Keyword(s):

Schottky Barrier ◽

Analytical Model ◽

Double Gate ◽

Two Dimensional ◽

Performance Study ◽

Double Gate Mosfet

Download Full-text

Analysis and Performance Study of III–V Schottky Barrier Double-Gate MOSFETs Using a 2-D Analytical Model

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2569488 ◽

2016 ◽

Vol 63 (7) ◽

pp. 2757-2763 ◽

Author(s):

Mike Schwarz ◽

Alexander Kloes

Keyword(s):

Schottky Barrier ◽

Analytical Model ◽

Double Gate ◽

Performance Study ◽

And Performance

Download Full-text

Two-dimensional analytical model of threshold voltage and drain current of a double-halo gate-stacked triple-material double-gate MOSFET

Journal of Computational Electronics ◽

10.1007/s10825-016-0820-7 ◽

2016 ◽

Vol 15 (2) ◽

pp. 525-536 ◽

Author(s):

Md. Arafat Mahmud ◽

Samia Subrina

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Drain Current ◽

Double Gate ◽

Two Dimensional ◽

Double Gate Mosfet

Download Full-text

A two dimensional analytical model of drain to source current and subthreshold slope of a triple material double gate MOSFET

8th International Conference on Electrical and Computer Engineering ◽

10.1109/icece.2014.7026926 ◽

2014 ◽

Author(s):

M. A. Mahmud ◽

S. Subrina

Keyword(s):

Analytical Model ◽

Double Gate ◽

Two Dimensional ◽

Subthreshold Slope ◽

Double Gate Mosfet ◽

Download Full-text

Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method

Solid-State Electronics ◽

10.1016/j.sse.2016.08.006 ◽

2016 ◽

Vol 126 ◽

pp. 136-142 ◽

Author(s):

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Analytical Model ◽

Modeling Method ◽

Double Gate ◽

Subthreshold Region ◽

Macroscopic Modeling ◽

Random Dopant Fluctuation ◽

Double Gate Mosfet ◽

Download Full-text

Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2013.13.5.500 ◽

2013 ◽

Vol 13 (5) ◽

pp. 500-510 ◽

Author(s):

Rajni Gautam ◽

Manoj Saxena ◽

R.S. Gupta ◽

Mridula Gupta

Keyword(s):

Low Power ◽

Analytical Model ◽

High Sensitivity ◽

Double Gate ◽

Double Gate Mosfet

Download Full-text

Two Dimensional Numerical Modeling of Lightly Doped Nanoscale Double-Gate MOSFET

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2005.212 ◽

2005 ◽

Vol 2 (3) ◽

pp. 414-422

Author(s):

Deepanjan Datta ◽

A. Annada Prasad Sarab ◽

S. Dasgupta

Keyword(s):

Numerical Modeling ◽

Double Gate ◽

Two Dimensional ◽

Double Gate Mosfet

Download Full-text

A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Download Full-text

Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

Journal of Semiconductors ◽

10.1088/1674-4926/38/2/024004 ◽

2017 ◽

Vol 38 (2) ◽

pp. 024004

Author(s):

Huifang Xu ◽

Yuehua Dai

Keyword(s):

Analytical Model ◽

Charge Carriers ◽

Double Gate ◽

Two Dimensional ◽

Mobile Charge ◽

Download Full-text

Analytical Model for RDF-Induced Threshold Voltage Fluctuations in Double-Gate MOSFET

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2019.2910197 ◽

2019 ◽

Vol 19 (2) ◽

pp. 370-377 ◽

Author(s):

S. R. Sriram ◽

B. Bindu

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Double Gate ◽

Voltage Fluctuations ◽

Double Gate Mosfet

Download Full-text

Two Dimensional Analytical Potential Modeling of Nanoscale Fully Depleted Metal Gate Double Gate MOSFET

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2008.309 ◽

2008 ◽

Vol 3 (3) ◽

pp. 297-306 ◽

Author(s):

S. K. Vishvakarma ◽

A. K. Saxena ◽

S. Dasgupta

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Fully Depleted ◽

Analytical Potential ◽

Double Gate Mosfet

Download Full-text