Coupled polaron-electron charge transport in graphite functionalized polyaniline on cellulose: Metal free flexible p-type semiconductor

2018 ◽  
Vol 245 ◽  
pp. 96-101 ◽  
Author(s):  
Krishna Deb ◽  
Kamanashis Sarkar ◽  
Arun Bera ◽  
Ajit Debnath ◽  
Biswajit Saha
Keyword(s):  
Charge Transport ◽  
Electron Charge ◽  
Metal Free ◽  
Type Semiconductor ◽  
P Type

Sulphur bridged [22]annulene[2.1.2.1] based organic field-effect transistors: interplay of the steric bulk and charge transport

RSC Advances ◽  
2014 ◽  
Vol 4 (71) ◽  
pp. 37503-37509 ◽  
Author(s):  
Tarunpreet Singh Virk ◽  
Kamaljit Singh ◽  
Yunke Qin ◽  
Wei Xu ◽  
Daoben Zhu
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Type Semiconductor ◽  
P Type

New, neutral, slightly puckered aromatic meso-substituted tetrathia[22]porphyrin(2.1.2.1) macrocyclic architectures display efficacious p-type semiconductor behaviour with improved on/off ratios.

Tuning the π–π overlap and charge transport in single crystals of an organic semiconductor via solvation and polymorphism

2020 ◽  
Vol 22 (35) ◽  
pp. 19855-19863
Author(s):  
Marc Courté ◽  
Jun Ye ◽  
Hui Jiang ◽  
Rakesh Ganguly ◽  
Shasha Tang ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Crystalline Form ◽  
Organic P ◽  
Single Crystalline ◽  
Type Semiconductor ◽  
P Type

We report here on the occurrence of two solvates and three polymorphs in single crystalline form of an organic p-type semiconductor and demonstrate here that solvation allows to tune the π–π overlap and transport properties of organic semiconductors.

Noble-metal-free Cu2S-modified photocatalysts for enhanced photocatalytic hydrogen production by forming nanoscale p–n junction structure

RSC Advances ◽  
2015 ◽  
Vol 5 (23) ◽  
pp. 18159-18166 ◽  
Author(s):  
Yubin Chen ◽  
Zhixiao Qin ◽  
Xixi Wang ◽  
Xu Guo ◽  
Liejin Guo
Keyword(s):  
Hydrogen Production ◽  
Noble Metal ◽  
Low Cost ◽  
Environment Friendly ◽  
Photocatalytic Hydrogen Production ◽  
Metal Free ◽  
Type Semiconductor ◽  
P Type ◽  
Junction Structure

Low-cost and environment-friendly p-type Cu2S efficiently promoted photocatalytic hydrogen production of n-type semiconductor photocatalysts by forming nanoscale p–n junction structure.

P-Type Cobalt Phosphide Composites (CoP–Co2P) Decorated on Titanium Oxide for Enhanced Noble-Metal-Free Photocatalytic H2 Evolution Activity

Langmuir ◽  
2021 ◽  
Vol 37 (11) ◽  
pp. 3321-3330
Author(s):  
Rong Liang ◽  
Yanwen Wang ◽  
Chao Qin ◽  
Xuehua Chen ◽  
Zhizhen Ye ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Noble Metal ◽  
H2 Evolution ◽  
Metal Free ◽  
Cobalt Phosphide ◽  
P Type ◽  
Photocatalytic H2 Evolution

Transparent P-type Conducting LaCuOS Layered Oxysulfide

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono
Keyword(s):  
Electrical Conductivity ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Promising Material ◽  
High Transparency ◽  
Conducting Oxides ◽  
Excitonic Absorption ◽  
Type Semiconductor ◽  
Optical Applications ◽  
P Type

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

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