Quantitative modelling of nucleation kinetics in experiments for poly-Si growth on SiO2 by hot wire chemical vapor deposition

2004 ◽  
Vol 458 (1-2) ◽  
pp. 67-70 ◽  
Author(s):  
Maribeth S. Mason ◽  
Jason K. Holt ◽  
Harry A. Atwater
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Quantitative Modelling ◽  
Nucleation Kinetics

Quantitative Modelling of Nucleation Kinetics in Experiments for Poly-Si Growth on Sio2 by Hot-Wire Chemical Vapor Deposition

2001 ◽  
Vol 664 ◽  
Author(s):  
Maribeth Swiatek ◽  
Jason K. Holt ◽  
Harry A. Atwater
Keyword(s):  
Activation Energy ◽  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Hot Wire ◽  
Nucleation Kinetics ◽  
Temperature Dependent ◽  
Cluster Density

ABSTRACTWe apply a rate-equation pair binding model of nucleation kinetics [1] to the nucleation of Si islands grown by hot-wire chemical vapor deposition on SiO2 substrates. Previously, we had demonstrated an increase in grain size of polycrystalline Si films with H2 dilution from 40 nm using 100 mTorr of 1% SiH4 in He to 85 nm with the addition of 20 mTorr H2. [2] This increase in grain size is attributed to atomic H etching of Si monomers rather than stable Si clusters during the early stages of nucleation, decreasing the nucleation density. Atomic force microscopy (AFM) measurements show that the nucleation density increases sublinearly with time at low coverage, implying a fast nucleation rate until a critical density is reached, after which grain growth begins. The nucleation density decreases with increasing H2 dilution (H2:SiH4), which is an effect of the etching mechanism, and with increasing temperature, due to enhanced Si monomer diffusivity on SiO2. From temperature-dependent measurements, we estimate the activation energy for surface diffusion of Si monomers on SiO2 to be 0.47 ± 0.09 eV. Simulations of the temperature-dependent supercritical cluster density lead to an estimated activation energy of 0.42 eV ± 0.01 eV and a surface diffusion coefficient prefactor of 0.1 ± 0.03 cm2/s. H2-dilution-dependent simulations of the supercritical cluster density show an approximately linear relationship between the H2 dilution and the etch rate of clusters.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Fabrication of amorphous carbon nitride films by hot-wire chemical vapor deposition

2001 ◽  
Vol 395 (1-2) ◽  
pp. 249-252 ◽  
Author(s):  
Haruo Yokomichi ◽  
Atsushi Masuda ◽  
Naoki Kishimoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Amorphous Carbon Nitride

Simple and fast fabrication of a-Si:H/c-Si hetero-junction solar cells by dual-chamber hot wire chemical vapor deposition

2014 ◽  
Vol 68 ◽  
pp. 397-402 ◽  
Author(s):  
Dae Young Jeong ◽  
Kyungmin Kim ◽  
Hee-eun Song ◽  
Jinsoo Song ◽  
Seung Jae Baik ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Dual Chamber

In-line deposition of silicon-based films by hot-wire chemical vapor deposition

2013 ◽  
Vol 215 ◽  
pp. 141-147 ◽  
Author(s):  
Lothar Schäfer ◽  
Tino Harig ◽  
Markus Höfer ◽  
Artur Laukart ◽  
Dietmar Borchert ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Based
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