A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing

2005 ◽  
Vol 476 (1) ◽  
pp. 130-136 ◽  
Author(s):  
Ping Hsun Chen ◽  
Bing Wei Huang ◽  
Han-C Shih
Keyword(s):  
Size Effect ◽  
Chemical Kinetics ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Kinetics Model ◽  
Abrasive Size

A chemical kinetics model for a mixed-abrasive chemical mechanical polishing

2005 ◽  
Vol 483 (1-2) ◽  
pp. 239-244 ◽  
Author(s):  
Ping Hsun Chen ◽  
Bing Wei Huang ◽  
Han Chang Shih
Keyword(s):  
Chemical Kinetics ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Kinetics Model

Chemical-Mechanical Polishing of Wafers with Copper Film by Nano-Scale Abrasives

2008 ◽  
Vol 594 ◽  
pp. 181-186
Author(s):  
Jhy Cherng Tsai ◽  
Jin Fong Kao
Keyword(s):  
Citric Acid ◽  
Size Effect ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Copper Film ◽  
Mechanical Polishing ◽  
Al2o3 Powder ◽  
Abrasive Size

In this paper, experiments are designed and conducted to investigate the effects of abrasive size for Chemical-Mechanical Polishing (CMP) of copper film under different additives in HNO3-based polishing slurries. Alumina modified colloidal silica 100S (φ26nm), 200S (φ40nm) and Al2O3 (φ90nm), are used as polishing abrasives in this study. Experiments showed the following results. (1) With citric acid as an additive to slurry, the removal rate (RR) of the CMP process increases with abrasive size. Surface quality, however, becomes worse at the same time. (2) With benzotriazole (BTA) as an additive, RR of the slurry with Al2O3 powder is slightly higher but it does not increase with the abrasive size in general. Surface quality tends to be worse at the same time though it is not as strong as that in the slurry with citric acid as the additive. (3) The size effect of abrasive on RR with citric acid as additive is stronger than that with BTA.

Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model

2011 ◽  
Vol 520 (1) ◽  
pp. 400-403 ◽  
Author(s):  
Xiaoyan Liu ◽  
Yuling Liu ◽  
Yan Liang ◽  
Haixiao Liu ◽  
Zhiwen Zhao ◽  
...  
Keyword(s):  
Chemical Kinetics ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Kinetics Model

Research on CMP Characteristics Attribute to Groove Size

2011 ◽  
Vol 189-193 ◽  
pp. 4112-4115 ◽  
Author(s):  
Yong Chang Guo ◽  
Young Kyun Lee ◽  
Hyun Seop Lee ◽  
Hae Do Jeong
Keyword(s):  
Size Effect ◽  
Friction Force ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Experimental Results ◽  
Groove Width ◽  
Significant Difference

Groove pads are used quite widely in chemical mechanical polishing (CMP), and groove size plays an important role in CMP characteristics. This study focuses on the investigation of the groove size effect using X-Y groove pads which are different with pitch and width. The first experiment shows the size effect on the polishing characteristics including material removal rate (MRR), within wafer non-uniformity (WIWNU) on 4 inch oxide blanket wafers for 60 seconds. The second experiment verifies the reason why MRR and WIWNU are different, by the calculation of slurry duration time (SDT) resulting from the change of friction force. All experimental results indicated that a significant difference of slurry flow attributed to groove width and pitch has an impressive influence on friction force, finally the MRR and WIWNU are affected by the groove size.

Chemical-Mechanical Polishing of Copper in Glycerol Based Slurries

1996 ◽  
Vol 427 ◽  
Author(s):  
K. S. Kumar ◽  
S. P. Murarka
Keyword(s):  
Surface Tension ◽  
Dielectric Constant ◽  
Chemical Mechanical Polishing ◽  
Strong Dependence ◽  
Mechanical Polishing ◽  
Neutral Medium ◽  
Electrostatic Repulsion ◽  
Glycerol Concentration ◽  
Dual Damascene ◽  
Abrasive Size

AbstractThe development of a reliable/reproducible chemical-mechanical polishing (CMP) process to planarize and define copper using a dual damascene approach is essential for introducing copper as the interconnection metal. In this paper we present results of a new polishing slurry containing glycerol and Al2O3 abrasive. The slurry is a near-neutral medium and does not have the effect of acidic or basic slurries on copper. The effect of glycerol concentration and the abrasive size on the CMP behavior is investigated. The changes in the slurry temperature, pH, viscosity, dielectric constant and surface tension were examined as a function of the glycerol concentration. The results, indicating a strong dependence on both the glycerol concentration and the abrasive size, are explained on the basis of viscosity and dielectric constant of the solution and the van der waal forces and the electrostatic repulsion between the particles.

scholarly journals Synthesis and Characterization of SiO2Nanoparticles and Their Efficacy in Chemical Mechanical Polishing Steel Substrate

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
M. J. Kao ◽  
F. C. Hsu ◽  
D. X. Peng
Keyword(s):  
Chemical Mechanical Polishing ◽  
High Selectivity ◽  
Steel Substrate ◽  
Sol Gel ◽  
Aerospace Industry ◽  
Value Added ◽  
Mechanical Polishing ◽  
Reaction Conditions ◽  
Abrasive Size

Chemical mechanical polishing (CMP) technology is extensively used in the global planarization of highly value-added and large components in the aerospace industry. A nanopowder of SiO2was prepared by the sol-gel method and was compounded into polishing slurry for the CMP of steel substrate. The size of the SiO2abrasives was controlled by varying the sol-gel reaction conditions. The polishing efficacy of nano-SiO2was studied, and the CMP mechanism with nanosized abrasives was further investigated. The proposed methods can produce SiO2abrasives whose size can be controlled by varying the sol-gel reaction conditions. The size of the SiO2abrasives was controlled in the range from 58 to 684 nm. The roughness of the steel substrate strongly depends on the size of the abrasive, and the surface roughness decreases as the abrasive size declines. A super-smooth surface with a roughness of 8.4 nm is obtained with nanosized SiO2. Ideal CMP slurry can be used to produce material surfaces with low roughness, excellent global planarization, high selectivity, an excellent finish, and a low-defected rate.

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