scholarly journals The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer

2015 ◽  
Vol 2 (2) ◽  
pp. 157-162 ◽  
Author(s):  
Chuljin Park ◽  
Hyoungjae Kim ◽  
Sangjik Lee ◽  
Haedo Jeong
Keyword(s):  
High Pressure ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Sapphire Wafer ◽  
Pressure Chemical ◽  
Abrasive Size

Chemical-Mechanical Polishing of Wafers with Copper Film by Nano-Scale Abrasives

2008 ◽  
Vol 594 ◽  
pp. 181-186
Author(s):  
Jhy Cherng Tsai ◽  
Jin Fong Kao
Keyword(s):  
Citric Acid ◽  
Size Effect ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Copper Film ◽  
Mechanical Polishing ◽  
Al2o3 Powder ◽  
Abrasive Size

In this paper, experiments are designed and conducted to investigate the effects of abrasive size for Chemical-Mechanical Polishing (CMP) of copper film under different additives in HNO3-based polishing slurries. Alumina modified colloidal silica 100S (φ26nm), 200S (φ40nm) and Al2O3 (φ90nm), are used as polishing abrasives in this study. Experiments showed the following results. (1) With citric acid as an additive to slurry, the removal rate (RR) of the CMP process increases with abrasive size. Surface quality, however, becomes worse at the same time. (2) With benzotriazole (BTA) as an additive, RR of the slurry with Al2O3 powder is slightly higher but it does not increase with the abrasive size in general. Surface quality tends to be worse at the same time though it is not as strong as that in the slurry with citric acid as the additive. (3) The size effect of abrasive on RR with citric acid as additive is stronger than that with BTA.

Chemical-Mechanical Polishing of Copper in Glycerol Based Slurries

1996 ◽  
Vol 427 ◽  
Author(s):  
K. S. Kumar ◽  
S. P. Murarka
Keyword(s):  
Surface Tension ◽  
Dielectric Constant ◽  
Chemical Mechanical Polishing ◽  
Strong Dependence ◽  
Mechanical Polishing ◽  
Neutral Medium ◽  
Electrostatic Repulsion ◽  
Glycerol Concentration ◽  
Dual Damascene ◽  
Abrasive Size

AbstractThe development of a reliable/reproducible chemical-mechanical polishing (CMP) process to planarize and define copper using a dual damascene approach is essential for introducing copper as the interconnection metal. In this paper we present results of a new polishing slurry containing glycerol and Al2O3 abrasive. The slurry is a near-neutral medium and does not have the effect of acidic or basic slurries on copper. The effect of glycerol concentration and the abrasive size on the CMP behavior is investigated. The changes in the slurry temperature, pH, viscosity, dielectric constant and surface tension were examined as a function of the glycerol concentration. The results, indicating a strong dependence on both the glycerol concentration and the abrasive size, are explained on the basis of viscosity and dielectric constant of the solution and the van der waal forces and the electrostatic repulsion between the particles.

Surface Integrity Induced by Abrasive Machining Sapphire Wafer

2008 ◽  
Vol 53-54 ◽  
pp. 311-316 ◽  
Author(s):  
Dong Hui Wen ◽  
Yue Hua Wan ◽  
Tao Hong
Keyword(s):  
Surface Integrity ◽  
Chemical Mechanical Polishing ◽  
Surface Deformation ◽  
Light Emitting Diode ◽  
Ground Surface ◽  
Mechanical Polishing ◽  
Lattice Deformation ◽  
Abrasive Machining ◽  
Polishing Process ◽  
Sapphire Wafer

Surface integrity of Sapphire wafer is the frontier technology to grow high quality AlN/GaN films for high brightness light-emitting diode. Surface damage measurement methods for single crystal sapphire were introduced firstly. Classical types of surface deformation induced by abrasive machining, such as lattice deformation, strain, scratch, crack versus abrasive grits and chemical reaction were compared. With the development of modern grinding technology, depth of the damaged surface layer decreases from 10μm to 2μm or much less. Both crack, lattice deformation, twinning and strain were detected along the ground surface, only dislocation and strain were appeared for polished sapphire surface. Usually, depth of the damaged layer was less than 300nm using mechanical polishing process. Chemical mechanical polishing achieved the lowest depth of the damaged surface and best surface roughness, scratch depth was used to descript the damaged depth, which is about 1 nm, and so called no damage to the layer remains during chemical mechanical polishing process.

scholarly journals Synthesis and Characterization of SiO2Nanoparticles and Their Efficacy in Chemical Mechanical Polishing Steel Substrate

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
M. J. Kao ◽  
F. C. Hsu ◽  
D. X. Peng
Keyword(s):  
Chemical Mechanical Polishing ◽  
High Selectivity ◽  
Steel Substrate ◽  
Sol Gel ◽  
Aerospace Industry ◽  
Value Added ◽  
Mechanical Polishing ◽  
Reaction Conditions ◽  
Abrasive Size

Chemical mechanical polishing (CMP) technology is extensively used in the global planarization of highly value-added and large components in the aerospace industry. A nanopowder of SiO2was prepared by the sol-gel method and was compounded into polishing slurry for the CMP of steel substrate. The size of the SiO2abrasives was controlled by varying the sol-gel reaction conditions. The polishing efficacy of nano-SiO2was studied, and the CMP mechanism with nanosized abrasives was further investigated. The proposed methods can produce SiO2abrasives whose size can be controlled by varying the sol-gel reaction conditions. The size of the SiO2abrasives was controlled in the range from 58 to 684 nm. The roughness of the steel substrate strongly depends on the size of the abrasive, and the surface roughness decreases as the abrasive size declines. A super-smooth surface with a roughness of 8.4 nm is obtained with nanosized SiO2. Ideal CMP slurry can be used to produce material surfaces with low roughness, excellent global planarization, high selectivity, an excellent finish, and a low-defected rate.

Experimental Analysis on Surface Profile of Sapphire Wafer after Polishing by Chemical Mechanical Polishing

2017 ◽  
Vol 749 ◽  
pp. 229-233
Author(s):  
Zone Ching Lin ◽  
Wei Shuen Huang ◽  
Hao Yang Ding
Keyword(s):  
Chemical Mechanical Polishing ◽  
Rotational Velocity ◽  
Abrasive Particle ◽  
Central Area ◽  
Surface Profile ◽  
Specific Area ◽  
Mechanical Polishing ◽  
Sapphire Wafer ◽  
Atomic Force ◽  
Surface Profiles

The study mainly explores the surface profile of sapphire wafer after polishing by the method of chemical mechanical polishing (CMP). Pattern-free polishing slurry with SiO2 abrasive particle is used to polish the sapphire wafer. This paper observes the phenomena of surface profile and surface scratches of sapphire wafer under different pressures and different rotational velocities during CMP. The study uses atomic force microscope (AFM) to scan the surface of sapphire wafer focusing on three axial lines of 0∘, 45∘and 90∘from the position of near edge passing the center of sapphire wafer. The study also selects five positions on a specific area to draw the surface profiles on the axial lines of 0∘, 45∘and 90∘. It can be observed that the central area of sapphire wafer has lower depression than other areas because the central area is polished more polishing times. Besides, the depression on the central area of sapphire wafer has a greater depression value and it has more and larger surface scratches when it is polished under a greater down force and at a faster rotational velocity.

Sign in / Sign up

Export Citation Format

Share Document