Impact of bias power-induced ion energy on refractive index of SiN films room-temperature deposited in SiH4–NH3–N2 pulsed plasma

AbstractLinear thermal expansion and refractive index variation have been measured in lead fluoride with a laser interferometer as a function of temperature. Data has been analyzed using the Lorentz-Lorenz relation. Molecular polarizability, band gap, variation of refractive index with density, and strain-polarizability parameter have been studied as a function of temperature. They exhibit a small variation with temperature except near the superionic phase transition where the variation appears to be more pronounced. The results are in good agreement with the published data near room temperature.

Download Full-text

EFFECT OF ION-ENERGY ON THE PROPERTIES OF AMORPHOUS GaN FILMS PRODUCED BY ION-ASSISTED DEPOSITION

Modern Physics Letters B ◽

10.1142/s0217984901003275 ◽

2001 ◽

Vol 15 (28n29) ◽

pp. 1355-1360 ◽

Cited By ~ 5

Author(s):

UDAY LANKE ◽

ANNETTE KOO ◽

SIMON GRANVILLE ◽

JOE TRODAHL ◽

ANDREAS MARKWITZ ◽

...

Keyword(s):

Room Temperature ◽

Single Phase ◽

Thermal Evaporation ◽

Ion Beam ◽

Atomic Ratio ◽

Nuclear Reaction Analysis ◽

Ion Energy ◽

X Ray ◽

Nitrogen Ions ◽

Nitrogen Ion

Amorphous GaN films were deposited on various substrates viz. Si (100), quartz, glass, Al, stainless steel and glassy carbon by thermal evaporation of gallium in the presence of energetic nitrogen ions from a Kaufman source. The films were deposited at room temperature and 5 × 10-4 mbar nitrogen partial pressure. The effect of a low energy nitrogen ion beam during the synthesis of films was investigated for energies 40 eV and 90 eV. The N:Ga atomic ratio, bonding state, microstructure, surface morphology, and electrical properties of the deposited a-GaN films were studied by different characterisation techniques. The films are found to be X-ray amorphous in nature, which is confirmed by Raman spectroscopy. Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) indicate the N:Ga atomic ratio in the films. The 400-750 eV energy range is thought to be optimal for the production of single-phase amorphous GaN . The effect of ion-energy on optical, Raman, and electrical conductivity measurements of the films is also presented.

Download Full-text

Photochemical Lamination of Low Refractive Index Transparent SiO2 Film at Room Temperature for Antireflection Coating

MRS Proceedings ◽

10.1557/proc-750-y5.5 ◽

2002 ◽

Vol 750 ◽

Author(s):

Y. Ogawa ◽

M. Murahara

Keyword(s):

Refractive Index ◽

Room Temperature ◽

Antireflection Coating ◽

Sio2 Film ◽

Fused Silica ◽

Photochemical Reactions ◽

Atom Density ◽

Reflection Of Light ◽

Fused Silica Glass ◽

Low Refractive Index

ABSTRACTA transparent low refractive index SiO2 film laminated on a glass substrate at room temperature by photochemical reactions with the Xe2* excimer lamp (172nm). This SiO2 film grown on the fused silica glass was proved to avoid reflection of light.A refractive index of the SiO2 film was 1.36. After annealing the film for one hour at 200 degrees centigrade, the refractive index increased to 1.42. The refractive index increased as the F atom density in the SiO 2 film decreased.

Download Full-text

Electrodynamic balance measurements of thermodynamic, kinetic, and optical aerosol properties inaccessible to bulk methods

Atmospheric Measurement Techniques ◽

10.5194/amt-8-2397-2015 ◽

2015 ◽

Vol 8 (6) ◽

pp. 2397-2408 ◽

Cited By ~ 26

Author(s):

S. S. Steimer ◽

U. K. Krieger ◽

Y.-F. Te ◽

D. M. Lienhard ◽

A. J. Huisman ◽

...

Keyword(s):

Refractive Index ◽

Light Scattering ◽

Room Temperature ◽

Shikimic Acid ◽

Resonance Spectroscopy ◽

Equilibrium Conditions ◽

Electrodynamic Balance ◽

Mie Resonance ◽

Water Diffusivity ◽

Activity Density

Abstract. Measurements of a single, levitated particle in an electrodynamic balance are an established tool for deriving thermodynamic and material data such as density, refractive index and activities of components of an aqueous solution under supersaturated conditions, where bulk measurements are not possible. The retrieval relies on combining mass-to-charge data and size data from light scattering. Here, we use a combination of low- and high-resolution Mie resonance spectroscopy to obtain radius data, enabling an accurate size determination not only when the particle is in equilibrium, but also when it is out of equilibrium due to kinetic limitation of mass transport. With the data measured under non-equilibrium conditions, it is possible to retrieve the water diffusivity. A challenge is that the radius retrieval by comparing measured light scattering with Mie theory requires the knowledge of refractive index as a function of concentration. Here, we show an iterative retrieval of refractive index and size for compounds for which data cannot be obtained in the bulk either due to lack of sufficient amounts of sample or limited solubility. We demonstrate the measurement strategy and the retrieval of water activity, density, refractive index and water diffusivity for aqueous shikimic acid. Water diffusivity in concentrated shikimic acid decreases by 6 orders of magnitude at 250 K compared to that at room temperature.

Download Full-text

Room Temperature Deposition of Silicon Oxynitride Films with Low Stress Using Sputtering-Type Electron Cyclotron Resonance Plasmas

MRS Proceedings ◽

10.1557/proc-594-457 ◽

1999 ◽

Vol 594 ◽

Author(s):

D. Gao ◽

K. Furukawa ◽

H. Nakashima ◽

J. Gao ◽

J. Wang ◽

...

Keyword(s):

Refractive Index ◽

Thermal Desorption ◽

Flow Rate ◽

Cyclotron Resonance ◽

Room Temperature ◽

Electron Cyclotron Resonance ◽

Thermal Desorption Spectroscopy ◽

Electron Cyclotron ◽

Silicon Oxynitride ◽

Intrinsic Stress

AbstractSilicon oxynitride (SiOxNy) films with low stress were deposited successfully at room temperature using sputtering-type electron cyclotron resonance (ECR) plasmas. Films were deposited for a wide range of flow rate ratio of O2 to N2 at a constant Ar flow rate. Film properties were verified by characterizations of refractive index (ellipsometry), structural properties (Fourier transform infrared and Auger electron spectroscopy), intrinsic stress, and barrier strength of water penetration (thermal desorption spectroscopy). A near-stoichiometric SiOxNy (x = 1.44 and y = 0.41) film with low stress could be formed at the optimum deposition condition, under which the SiOxNy film had a refractive index of 1.54. The results of thermal desorption spectroscopy measurements showed that the SiOx Ny film had a higher barrier against moisture penetration relative to deposited SiOx and SiNy films. The SiOxNy film was directly deposited on the organic EL device and the applicability was shown clearly. These results indicate that this SiOxNy film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of organic EL devices, which are required to be formed at low temperature.

Download Full-text

INVESTIGATIONS ON AZO/Al/AZO MULTILAYER STRUCTURE GROWN AT ROOM TEMPERATURE

Surface Review and Letters ◽

10.1142/s0218625x19500331 ◽

2018 ◽

Vol 25 (08) ◽

pp. 1950033

Author(s):

SAAD AMARA ◽

MOHAMED BOUAFIA

Keyword(s):

Refractive Index ◽

Room Temperature ◽

Incidence Angle ◽

Metal Layer ◽

Complex Refractive Index ◽

Visible Range ◽

Light Emitting ◽

The Real ◽

Pl Emission

In this work we investigate the effect of metal layer in the Al-doped ZnO (AZO)/Al/AZO structure. AZO and Al thin films are deposed successively at room temperature using DC magnetron sputtering by rotating the substrate holder without breaking the vacuum. The optical characterization of AZO/Al/AZO structure was performed by the spectroscopic ellipsometry under different incidence angles (55[Formula: see text], 65[Formula: see text] and 75[Formula: see text]). For the AZO monolayer structure, it was found that the complex refractive index and the complex permittivity coefficient varied differently according to the incidence angle. The addition of Al layer (5[Formula: see text]nm thicknesses) in this monostructure reduces significantly this influence on the measurement, homogenizes the real refractive index variation and significantly reduces the real electrical coefficient permittivity in the visible range. In addition, the obtained depolarization values confirm the results of the AFM roughness revealing that the Al layer addition makes the surface smoother so that it meets the required conditions as the bottom electrode of organic light emitting diodes. The photoluminescence (PL) measurements indicate that the Al layer alters the PL emission. Actually, the Al layer enhances subsequently the PL emission and promotes the blue and red emission.

Download Full-text

Comprehensive Refractive Index Property for Room-Temperature Ionic Liquids

Journal of Chemical & Engineering Data ◽

10.1021/je201289w ◽

2012 ◽

Vol 57 (8) ◽

pp. 2211-2216 ◽

Cited By ~ 128

Author(s):

Shiro Seki ◽

Seiji Tsuzuki ◽

Kikuko Hayamizu ◽

Yasuhiro Umebayashi ◽

Nobuyuki Serizawa ◽

...

Keyword(s):

Refractive Index ◽

Ionic Liquids ◽

Room Temperature ◽

Room Temperature Ionic Liquids

Download Full-text

Electronic Bandgap and Refractive Index Dispersion of Single Crystalline Epitaxial ZnGeN2

MRS Proceedings ◽

10.1557/proc-607-291 ◽

1999 ◽

Vol 607 ◽

Cited By ~ 5

Author(s):

L.D. Zhu ◽

P.E. Norris ◽

L.O. Bouthillette

Keyword(s):

Refractive Index ◽

Band Gap ◽

Room Temperature ◽

Band Gap Energy ◽

Organic Chemical ◽

Refractive Index Dispersion ◽

Electronic Band ◽

Single Crystalline ◽

Gap Energy ◽

Prism Coupling

AbstractThe electronic band gap of single crystalline ZnGeN2 epitaxial layer grown on sapphire substrate by metal organic chemical vapor deposition has been measured by optical transmission and room temperature photoluminescence. The band gap energy is 2.99eV at room temperature, and the band gap is a direct transition type. The interference oscillations of the transmission spectra together with rutile prism coupling measurements have been used to determine the r fractive index and the dispersion characteristics of the single crystal ZnGeN2 below the band gap energy. The rutile prism coupling measurement displays the wave guide modes of the film at 6 2.8nm wavelength of the He-Ne laser, enabling determination of the film thickness and refractive index precisely at the wavelength. The refractive index of ZnGeN2 crystal is 2.35 at 6328Å wavelength. The measured refractive index dispersion curve can be fitted with the first-order Sellmeier equation n2(λ) = A + λ2/(λ2-B), using fitting parameters A=4.3 1, B=0.076.

Download Full-text