scholarly journals Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing

2011 ◽  
Vol 519 (16) ◽  
pp. 5558-5561 ◽  
Author(s):  
Yung-Chen Cheng ◽  
Ying-Shen Kuo ◽  
Yun-Hsiu Li ◽  
Jing-Jong Shyue ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Gaas Substrates ◽  
Layer Deposition ◽  
P Type ◽  
Post Deposition

Effects of rapid thermal annealing on Hf-doped ZnO films grown by atomic layer deposition

2013 ◽  
Vol 577 ◽  
pp. 340-344 ◽  
Author(s):  
Shang-Bin Zhu ◽  
Yang Geng ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno

Effect of rapid thermal annealing on the properties of zinc tin oxide films prepared by plasma-enhanced atomic layer deposition

2020 ◽  
Vol 46 (9) ◽  
pp. 13033-13039 ◽  
Author(s):  
Xing-Tao Xue ◽  
Yang Gu ◽  
Hong-Ping Ma ◽  
Cheng-Zhou Hang ◽  
Jia-Jia Tao ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Tin Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films

P-Type Conductive Behaviors of AlN Co-Doped ZnO Films Deposited by the Atomic Layer Deposition

2012 ◽  
pp. 19-25
Author(s):  
Yu-Mi Kim ◽  
Kwang-Seok Jeong ◽  
Ho-Jin Yun ◽  
Seung-Dong Yang ◽  
Sang-Youl Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

Effects of Thickness Effect and Rapid Thermal Annealing on pH Sensing Characteristics of Thin HfO2Films Formed by Atomic Layer Deposition

2011 ◽  
Vol 50 (10S) ◽  
pp. 10PG03 ◽  
Author(s):  
Tseng-Fu Lu ◽  
Hao-Chun Chuang ◽  
Jer-Chyi Wang ◽  
Chia-Ming Yang ◽  
Pei-Chun Kuo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Thickness Effect ◽  
Ph Sensing ◽  
Layer Deposition ◽  
Sensing Characteristics

scholarly journals Study on Fabrication and Material Properties of Al Doped ZnO Films Prepared by Atmospheric Atomic Layer Deposition

2021 ◽  
Vol 31 (4) ◽  
pp. 85-92
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
High Resistivity ◽  
Zno Films ◽  
Experimental Conditions ◽  
Layer Deposition ◽  
Measurement Results ◽  
P Type

This paper presents the study on aluminium-doped zinc oxide (AZO) films prepared by atmospheric atomic layer deposition (AALD) using Diethylzinc (DEZ), Zn(C2H5)2, and Trimethylaluminum (TMA), Al(CH3)3 as precursors. The optimal condition for doping was investigated by changing in DEZ/TMA ratio. The crystal structure of fabricated thin films shows the hexagonal wurtzite structure with the orientation along the c-axis. The influence of heat treatment on the grain size, carrier type and concentration of post-fabricated films deposited on the different substrates which are borosilicate glass and sapphire was also analysed. The Hall measurement to determine the carrier type and resistivity at room temperature to 400oC was performed. The measurement results show that as-deposited samples behave as alloy-like property with p-type carriers and high resistivity. However, they turned into n-type nature as expected with the increase in carrier concentration and consequently the marked decrease in electrical resistance when annealed at the higher temperatures that are at 500oC and 900oC (i.e, 773 and 1173 K). In general, the obtained films with optimized experimental conditions of as- and post-fabrication can be used for thermoelectric applications.

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

2014 ◽  
Vol 665 ◽  
pp. 136-139 ◽  
Author(s):  
Li Feng Liu ◽  
Wei Bing Zhang ◽  
Yi Ran Wang ◽  
Wen Jia Ma ◽  
Guo Hui Wang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Microstructure Change ◽  
Layer Deposition

HfAlOx based RRAM devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3. The effect of rapid thermal annealing (RTA) on the resistive switching uniformity of HfAlOx based RRAM devices was investigated. Compared to the as-deposited devices, the resistive switching uniformity of HfAlOx based RRAM devices after RTA treatment are remarkably improved. The uniformity improvement of HfAlOx based RRAM after RTA treatment is related to microstructure change in the resistive switching film.

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