scholarly journals Study on Fabrication and Material Properties of Al Doped ZnO Films Prepared by Atmospheric Atomic Layer Deposition

2021 ◽  
Vol 31 (4) ◽  
pp. 85-92
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
High Resistivity ◽  
Zno Films ◽  
Experimental Conditions ◽  
Layer Deposition ◽  
Measurement Results ◽  
P Type

This paper presents the study on aluminium-doped zinc oxide (AZO) films prepared by atmospheric atomic layer deposition (AALD) using Diethylzinc (DEZ), Zn(C2H5)2, and Trimethylaluminum (TMA), Al(CH3)3 as precursors. The optimal condition for doping was investigated by changing in DEZ/TMA ratio. The crystal structure of fabricated thin films shows the hexagonal wurtzite structure with the orientation along the c-axis. The influence of heat treatment on the grain size, carrier type and concentration of post-fabricated films deposited on the different substrates which are borosilicate glass and sapphire was also analysed. The Hall measurement to determine the carrier type and resistivity at room temperature to 400oC was performed. The measurement results show that as-deposited samples behave as alloy-like property with p-type carriers and high resistivity. However, they turned into n-type nature as expected with the increase in carrier concentration and consequently the marked decrease in electrical resistance when annealed at the higher temperatures that are at 500oC and 900oC (i.e, 773 and 1173 K). In general, the obtained films with optimized experimental conditions of as- and post-fabrication can be used for thermoelectric applications.

P-Type Conductive Behaviors of AlN Co-Doped ZnO Films Deposited by the Atomic Layer Deposition

2012 ◽  
pp. 19-25
Author(s):  
Yu-Mi Kim ◽  
Kwang-Seok Jeong ◽  
Ho-Jin Yun ◽  
Seung-Dong Yang ◽  
Sang-Youl Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

Room Temperature Sensing of O2 and CO by Atomic Layer Deposition Prepared ZnO Films Coated with Pt Nanoparticles

2013 ◽  
Vol 58 (10) ◽  
pp. 203-214 ◽  
Author(s):  
I. Erkens ◽  
M. Blauw ◽  
M. Verheijen ◽  
F. Roozeboom ◽  
W. M. M. Kessels
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Temperature Sensing ◽  
Zno Films ◽  
Layer Deposition

Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition

2012 ◽  
Vol 329 ◽  
pp. 159-164 ◽  
Author(s):  
Rosniza Hussin ◽  
Xiang Hui Hou ◽  
Kwang Leong Choy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Semiconductor Industry ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition

Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

Enhanced Free Exciton and Direct Band-Edge Emissions at Room Temperature in Ultrathin ZnO Films Grown on Si Nanopillars by Atomic Layer Deposition

2011 ◽  
Vol 3 (11) ◽  
pp. 4415-4419 ◽  
Author(s):  
Yuan-Ming Chang ◽  
Jiann Shieh ◽  
Pei-Yuan Chu ◽  
Hsin-Yi Lee ◽  
Chih-Ming Lin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Free Exciton ◽  
Atomic Layer ◽  
Band Edge ◽  
Zno Films ◽  
Layer Deposition ◽  
Direct Band

scholarly journals Stable p-type ZnO films grown by atomic layer deposition on GaAs substrates and treated by post-deposition rapid thermal annealing

2011 ◽  
Vol 519 (16) ◽  
pp. 5558-5561 ◽  
Author(s):  
Yung-Chen Cheng ◽  
Ying-Shen Kuo ◽  
Yun-Hsiu Li ◽  
Jing-Jong Shyue ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Atomic Layer ◽  
Zno Films ◽  
Gaas Substrates ◽  
Layer Deposition ◽  
P Type ◽  
Post Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Hydrogen in As‐Grown and Annealed ZnO Films Grown by Atomic Layer Deposition

2020 ◽  
Vol 218 (1) ◽  
pp. 2000318
Author(s):  
Elzbieta Guziewicz ◽  
Wojciech Wozniak ◽  
Sushma Mishra ◽  
Rafal Jakiela ◽  
Marek Guziewicz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Sign in / Sign up

Export Citation Format

Share Document