Preparation of resistance random access memory samples for in situ transmission electron microscopy experiments

2013 ◽  
Vol 533 ◽  
pp. 48-53 ◽  
Author(s):  
Masaki Kudo ◽  
Masashi Arita ◽  
Yuuki Ohno ◽  
Takashi Fujii ◽  
Kouichi Hamada ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Transmission Electron ◽  
Resistance Random Access Memory

scholarly journals In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

2013 ◽  
Vol 113 (8) ◽  
pp. 083701 ◽  
Author(s):  
Takashi Fujii ◽  
Masashi Arita ◽  
Kouichi Hamada ◽  
Yasuo Takahashi ◽  
Norihito Sakaguchi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Its Analysis ◽  
Transmission Electron ◽  
Resistance Random Access Memory

scholarly journals Correlative transmission electron microscopy and electrical properties study of switchable phase-change random access memory line cells

2015 ◽  
Vol 117 (6) ◽  
pp. 064504 ◽  
Author(s):  
J. L. M. Oosthoek ◽  
F. C. Voogt ◽  
K. Attenborough ◽  
M. A. Verheijen ◽  
G. A. M. Hurkx ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electrical Properties ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Transmission Electron

Evidence of Ti-related Inclusions in an Al Alloy Interconnecting Layer for Nanometer 256MBit DRAM Semiconductor Devices Characterized by TEM, STEM, EELS Elemental Mapping, and XEDS Linescan

2002 ◽  
Vol 737 ◽  
Author(s):  
Wei Zhao ◽  
Steve Graca
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Semiconductor Devices ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Elemental Mapping ◽  
Access Memory ◽  
Analytical Tem ◽  
Transmission Electron

ABSTRACTWith the introduction of high aspect ratio and steep geometries in deep-subquarter-micron dynamic random access memory (DRAM) device, it becomes more and more critical to understand the formation of undesired intermetallic Ti-Al phases in Al-metallization and thus better-control the profile of interconnectors. In this article, Ti-related inclusions in Metal 1 (M1) interconnecting layer (an AlCu-0.5% alloy) originated from the bottom Ti liner were characterized with an Analytical TEM. Samples were cleaved from nanometer 256Mbit dynamic random access memory DRAM devices. The TEM employed is a JEOL 2010F with a field emission gun (FEG) and running at 200KV acceleration voltage. Correlations among transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS) elemental mapping, and x-ray energy dispersive spectroscopy (XEDS) elemental linescan were established. The results here not only provide important feedbacks to semiconductor product integration and optimization, but also demonstrate the full-functionality of the start-of-the-art analytical TEM in investigations of nanometer semiconductor devices.

Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

1998 ◽  
Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Temperature Sensitive ◽  
Wafer Level ◽  
Top Down ◽  
Access Memory ◽  
Transmission Electron ◽  
Contact Processing

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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