Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

2012 ◽  
Vol 526 ◽  
pp. 221-224 ◽  
Author(s):  
A. Amaral ◽  
P. Brogueira ◽  
O. Conde ◽  
G. Lavareda ◽  
C. Nunes de Carvalho
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Power ◽  
Power Densities

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Multi-Component ZnO-In2O3-SnO2Thin Films Deposited by RF Magnetron Co-Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 119-122 ◽  
Author(s):  
Chang Sik Son ◽  
Jae Sung Hur ◽  
Byoung Hoon Lee ◽  
Sang Yul Back ◽  
Jeong Seop Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Visible Range ◽  
Rf Power ◽  
Working Pressure ◽  
Average Transmittance ◽  
Sno2 Thin Films ◽  
Ar Gas ◽  
Sputtering System ◽  
High Chemical Stability

Multi-component ZnO-In2O3-SnO2 thin films have been prepared by RF magnetron co-sputtering using targets composed of In4Sn3O12(99.99%) [1] and ZnO(99.99%) at room temperature. In4Sn3O12 contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / ( RF1 + RF2 )] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied 0~100W respectively. The thicknesses of the films were 350~650nm. The composition concentrations of the each film were measured with EPMA and AES. The low resistivity of 1-2 × 10-3 and an average transmittance above 80% in the visible range were attained for the films over a range of δ (0.3 ≤ δ ≤ 0.5). The films also showed a high chemical stability with time and a good uniformity.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

RF power dependence of refractive index of room temperature sputtered ZnO:Al thin films

2013 ◽  
Vol 115 (1) ◽  
pp. 347-351 ◽  
Author(s):  
Bhaskar Chandra Mohanty ◽  
Deuk Ho Yeon ◽  
Jae Ho Yun ◽  
Jun Sik Cho ◽  
Yong Soo Cho
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Room Temperature ◽  
Power Dependence ◽  
Rf Power

scholarly journals YIG: Bi2O3Nanocomposite Thin Films for Magnetooptic and Microwave Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
M. Nur-E-Alam ◽  
Mikhail Vasiliev ◽  
Kamal Alameh ◽  
Viacheslav Kotov ◽  
Victor Demidov ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Range ◽  
Oxide Content ◽  
Rf Power ◽  
Optical Losses ◽  
Deposition Processes ◽  
Power Densities ◽  
Application Specific ◽  
532 Nm ◽  
Ferromagnetic Resonance Linewidth

Y3Fe5O12-Bi2O3composite thin films are deposited onto Gd3Ga5O12(GGG) substrates and their annealing crystallization regimes are optimized (in terms of both process temperatures and durations) to obtain high-quality thin film layers possessing magnetic properties attractive for a range of technological applications. The amount of bismuth oxide content introduced into these nanocomposite-type films is controlled by adjusting the RF power densities applied to both Y3Fe5O12and Bi2O3sputtering targets during the cosputtering deposition processes. The measured material properties of oven-annealed YIG-Bi2O3films indicate that cosputtering of YIG-Bi2O3composites can provide the flexibility of application-specific YIG layers fabrication of interest for several existing, emerging, and also frontier technologies. Experimental results demonstrate large specific Faraday rotation (of more than 1°/µm at 532 nm), achieved simultaneously with low optical losses in the visible range and very narrow peak-to-peak ferromagnetic resonance linewidth of around ΔHpp= 6.1 Oe at 9.77 GHz.

Highly transparent undoped semiconducting ZnOx thin films deposited at room temperature by rf-PERTE — Influence of rf power

2010 ◽  
Vol 356 (28-30) ◽  
pp. 1392-1394
Author(s):  
G. Lavareda ◽  
P. Parreira ◽  
J. Valente ◽  
F.T. Nunes ◽  
A. Amaral ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Power

Effect of RF Power on the Properties of Magnetron Sputtered ZnO:Al Thin Films Deposited at Room Temperature

2010 ◽  
Vol 636-637 ◽  
pp. 991-995 ◽  
Author(s):  
Mabrouk Selmi ◽  
F. Chaabouni ◽  
Mohamed Abaab ◽  
Bahri Rezig
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Antireflective Coatings ◽  
Rf Power ◽  
Si Substrates ◽  
Visible Wavelength Range ◽  
Aluminum Doped Zinc Oxide ◽  
Optical Applications

RF magnetron sputtering is used to deposit Aluminum-doped zinc oxide (ZnO:Al) films on glass and p-Si substrates. This work is a study of ZnO:Al films grown at different RF powers for photovoltaic cells application, as antireflective (AR) coatings. At room temperature and argon gas pressure of 0.6 Pa, RF power was changed from 200 to 400 W. The structural, electrical and optical properties of ZnO:Al films were investigated. Under theses conditions, we have obtained c axis-oriented wurtzite structure ZnO thin films with high transmission (>85%) and low reflection in visible wavelength range and a band gap of 3.34 eV. The results of this study suggest that the variation of the RF power, used for growth, allows the control of the structural and optical properties of the films. ZnO:Al films can be used in optical applications as thin films antireflective coatings.

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