RF power dependence of refractive index of room temperature sputtered ZnO:Al thin films

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

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Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

Thin Solid Films ◽

10.1016/j.tsf.2012.11.019 ◽

2012 ◽

Vol 526 ◽

pp. 221-224 ◽

Cited By ~ 1

Author(s):

A. Amaral ◽

P. Brogueira ◽

O. Conde ◽

G. Lavareda ◽

C. Nunes de Carvalho

Keyword(s):

Thin Films ◽

Room Temperature ◽

Rf Power ◽

Power Densities

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Multi-Component ZnO-In2O3-SnO2Thin Films Deposited by RF Magnetron Co-Sputtering

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.119 ◽

2007 ◽

Vol 124-126 ◽

pp. 119-122 ◽

Cited By ~ 1

Author(s):

Chang Sik Son ◽

Jae Sung Hur ◽

Byoung Hoon Lee ◽

Sang Yul Back ◽

Jeong Seop Lee ◽

...

Keyword(s):

Thin Films ◽

Room Temperature ◽

Visible Range ◽

Rf Power ◽

Working Pressure ◽

Average Transmittance ◽

Sno2 Thin Films ◽

Ar Gas ◽

Sputtering System ◽

High Chemical Stability

Multi-component ZnO-In2O3-SnO2 thin films have been prepared by RF magnetron co-sputtering using targets composed of In4Sn3O12(99.99%) [1] and ZnO(99.99%) at room temperature. In4Sn3O12 contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / ( RF1 + RF2 )] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied 0~100W respectively. The thicknesses of the films were 350~650nm. The composition concentrations of the each film were measured with EPMA and AES. The low resistivity of 1-2 × 10-3 and an average transmittance above 80% in the visible range were attained for the films over a range of δ (0.3 ≤ δ ≤ 0.5). The films also showed a high chemical stability with time and a good uniformity.

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Optimal Preparation and Characterization of Sputtered Y2O3 Films on Sapphire Substrates

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.266 ◽

2014 ◽

Vol 602-603 ◽

pp. 266-269 ◽

Cited By ~ 4

Author(s):

Gui Gen Wang ◽

Hong Liang Qian ◽

Qing Tao Li ◽

Guo Shuang Qin ◽

Lin Luo

Keyword(s):

Thin Films ◽

Refractive Index ◽

Deposition Velocity ◽

Rf Power ◽

Sapphire Substrates ◽

Elastic Module ◽

Preparation Conditions ◽

Composition Structure ◽

Sputtering Pressure

Normal 0 7.8 磅 0 2 false false false MicrosoftInternetExplorer4 It is necessary to prepare compressive films on sapphire window for preventing its high-temperature failure. In this study, the yttrium oxide (Y2O3) thin films were deposited on the sapphire substrates by RF reactive magnetron sputtering with varying sputtering pressure. The as-deposited Y2O3films were also annealed. The composition, structure, refractive index and mechanical properties of the films were systematically analyzed by XPS, XRD, ellipsometry and nanoindention method, respectively. The influences of sputtering pressure on the deposition velocity and the refractive index were investigated. It can obtain desirable Y2O3thin films for the preparation conditions (sputtering pressure: 10Pa, substrate temperature: 500°C, RF power: 200W) after annealing in O2at 500°C for 1h. The refractive index and hardness both have the maximum value (1.8337 and 3.98 GPa), respectively. The elastic module has the minimum value (109.24 GPa). It is promising for the Y2O3film as the underlayer of protective coating of sapphire windows. <object classid="clsid:38481807-CA0E-42D2-BF39-B33AF135CC4D" id=ieooui> st1\:*{behavior:url(#ieooui) } /* Style Definitions */ table.MsoNormalTable {mso-style-name:普通表格; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-parent:""; mso-padding-alt:0pt 5.4pt 0pt 5.4pt; mso-para-margin:0pt; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman"; mso-ansi-language:#0400; mso-fareast-language:#0400; mso-bidi-language:#0400;}

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Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.545.290 ◽

2012 ◽

Vol 545 ◽

pp. 290-293

Author(s):

Maryam Amirhoseiny ◽

Hassan Zainuriah ◽

Ng Shashiong ◽

Mohd Anas Ahmad

Keyword(s):

Thin Films ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

X Ray Diffraction ◽

Nitrogen Gas ◽

X Ray ◽

Force Microscopy ◽

Si Substrates ◽

Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

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RF Power Dependence on Structural and Electrical Properties of Cu Thin Films on a Glass Substrate Prepared Using Magnetron Sputtering with Multipolar Magnetic Plasma Confinement

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.140.188 ◽

2020 ◽

Vol 140 (8) ◽

pp. 188-192

Author(s):

Taro Katayama ◽

Hiroshi Toyota

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Glass Substrate ◽

Power Dependence ◽

Rf Power ◽

Plasma Confinement ◽

Structural And Electrical Properties ◽

Magnetic Plasma

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Optical Properties of Ge23.5Pb20S56.5 Glassy System

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.723.522 ◽

2016 ◽

Vol 723 ◽

pp. 522-526

Author(s):

Nadezhda Ivanovna Anisimova ◽

Gennady Alekseevich Bordovsky ◽

Rene Alejandro Castro ◽

Lilia Ansafovna Nabiullina

Keyword(s):

Thin Films ◽

Refractive Index ◽

Absorption Coefficient ◽

Room Temperature ◽

Fundamental Absorption Edge ◽

Transmission Spectra ◽

Glassy System ◽

Static Structure ◽

Structure Disorder ◽

Disorder Parameter

The spectra of refractive index and absorption coefficient in thin films of Ge23.5Pb20S56.5 glassy system were calculated on the base of analysis of transmission spectra. The refractive index has values between 2.0 and 2.6 in the spectral range between 500 nm and 1200 nm. The existence of indirect allowed transitions with energy Eg = 1.70 ± 0.01 eV and phonon energy of wph= 0.11 eV at room temperature was found. For values of the absorption coefficient a < 103см –1 the fundamental absorption edge is described by exponential function known as Urbach-rule. The static structure disorder parameter wo, is equal to 0.06 eV.

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