scholarly journals YIG: Bi2O3Nanocomposite Thin Films for Magnetooptic and Microwave Applications

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
M. Nur-E-Alam ◽  
Mikhail Vasiliev ◽  
Kamal Alameh ◽  
Viacheslav Kotov ◽  
Victor Demidov ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Range ◽  
Oxide Content ◽  
Rf Power ◽  
Optical Losses ◽  
Deposition Processes ◽  
Power Densities ◽  
Application Specific ◽  
532 Nm ◽  
Ferromagnetic Resonance Linewidth

Y3Fe5O12-Bi2O3composite thin films are deposited onto Gd3Ga5O12(GGG) substrates and their annealing crystallization regimes are optimized (in terms of both process temperatures and durations) to obtain high-quality thin film layers possessing magnetic properties attractive for a range of technological applications. The amount of bismuth oxide content introduced into these nanocomposite-type films is controlled by adjusting the RF power densities applied to both Y3Fe5O12and Bi2O3sputtering targets during the cosputtering deposition processes. The measured material properties of oven-annealed YIG-Bi2O3films indicate that cosputtering of YIG-Bi2O3composites can provide the flexibility of application-specific YIG layers fabrication of interest for several existing, emerging, and also frontier technologies. Experimental results demonstrate large specific Faraday rotation (of more than 1°/µm at 532 nm), achieved simultaneously with low optical losses in the visible range and very narrow peak-to-peak ferromagnetic resonance linewidth of around ΔHpp= 6.1 Oe at 9.77 GHz.

Device quality InOx:Sn and InOx thin films deposited at room temperature with different rf-power densities

2012 ◽  
Vol 526 ◽  
pp. 221-224 ◽  
Author(s):  
A. Amaral ◽  
P. Brogueira ◽  
O. Conde ◽  
G. Lavareda ◽  
C. Nunes de Carvalho
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Power ◽  
Power Densities

Multi-Component ZnO-In2O3-SnO2Thin Films Deposited by RF Magnetron Co-Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 119-122 ◽  
Author(s):  
Chang Sik Son ◽  
Jae Sung Hur ◽  
Byoung Hoon Lee ◽  
Sang Yul Back ◽  
Jeong Seop Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Visible Range ◽  
Rf Power ◽  
Working Pressure ◽  
Average Transmittance ◽  
Sno2 Thin Films ◽  
Ar Gas ◽  
Sputtering System ◽  
High Chemical Stability

Multi-component ZnO-In2O3-SnO2 thin films have been prepared by RF magnetron co-sputtering using targets composed of In4Sn3O12(99.99%) [1] and ZnO(99.99%) at room temperature. In4Sn3O12 contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / ( RF1 + RF2 )] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied 0~100W respectively. The thicknesses of the films were 350~650nm. The composition concentrations of the each film were measured with EPMA and AES. The low resistivity of 1-2 × 10-3 and an average transmittance above 80% in the visible range were attained for the films over a range of δ (0.3 ≤ δ ≤ 0.5). The films also showed a high chemical stability with time and a good uniformity.

scholarly journals Investigation of the influence of plasma source power on the properties of magnetron sputtered Ta2O5 thin films

2021 ◽  
Vol 255 ◽  
pp. 03005
Author(s):  
Manuel Bärtschi ◽  
Daniel Schachtler ◽  
Silvia Schwyn-Thöny ◽  
Thomas Südmeyer ◽  
Roelene Botha
Keyword(s):  
Thin Films ◽  
Scattered Light ◽  
Plasma Source ◽  
Stray Light ◽  
Optical Losses ◽  
Coating Materials ◽  
Source Power ◽  
Light Losses ◽  
Interference Coating ◽  
Deposition Processes

To enable the production of sophisticated optical interference coating designs, coatings with very low absorption and stray light losses and excellent layer thickness deposition accuracy are required. The selection and optimization of suitable coating materials and deposition processes are consequently essential. This study investigated the influence of the plasma source power on the optical properties, layer uniformity and stress, scattered light behavior and optical losses of magnetron sputtered Ta2O5 thin films.

scholarly journals Effect of Oxygen Flow Rate on Properties of Aluminum-Doped Indium-Saving Indium Tin Oxide (ITO) Thin Films Sputtered on Preheated Glass Substrates

Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1604
Author(s):  
Svitlana Petrovska ◽  
Ruslan Sergiienko ◽  
Bogdan Ilkiv ◽  
Takashi Nakamura ◽  
Makoto Ohtsuka
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Oxide Content ◽  
Glass Substrates ◽  
Ito Thin Films

Amorphous aluminum-doped indium tin oxide (ITO) thin films with a reduced indium oxide content of 50 mass% were manufactured by co-sputtering of ITO and Al2O3 targets in a mixed argon–oxygen atmosphere onto glass substrates preheated at 523 K. The oxygen gas flow rate and heat treatment temperature effects on the electrical, optical and structural properties of the films were studied. Thin films were characterized by means of a four-point probe, ultraviolet–visible-infrared (UV–Vis-IR) spectroscopy and X-ray diffraction. Transmittance of films and crystallization temperature increased as a result of doping of the ITO thin films by aluminum. The increase in oxygen flow rate led to an increase in transmittance and hindering of the crystallization of the aluminum-doped indium saving ITO thin films. It has been found that the film sputtered under optimal conditions showed a volume resistivity of 713 µΩcm, mobility of 30.8 cm2/V·s, carrier concentration of 2.9 × 1020 cm−3 and transmittance of over 90% in the visible range.

Cathodoluminescence of Praseodymium doped AlN, GaN and turbo static BN.

2004 ◽  
Vol 831 ◽  
Author(s):  
Muhammad Maqbool ◽  
H. H. Richardson ◽  
M. E. Kordesch
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Boron Nitride ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Reactive Sputtering ◽  
Visible Range ◽  
Rf Power

ABSTRACTPraseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100–200 Watts RF power, 5–10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from 3P0 → 3H4, 3P1→ 3H5, and 3P0 → 3F2 transitions in AlN:Pr, 3P0 → 3H4, 3P0 → 3H6, and 3P0 → 3F2 transitions in GaN:Pr and from 3P0 → 3H4, 3P1→ 3H5, 3P0 → 3H6, and 3P0 → 3F2 transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from 1S0 → 1D2 and 1S0 → 1I6 which are not observed in GaN:Pr and BN:Pr films.

scholarly journals Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Abd El-Hady B. Kashyout ◽  
Marwa Fathy ◽  
Moataz B. Soliman
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Structure Morphology ◽  
20 Nm ◽  
Range Of Values

The ceramic target of Indium tinoxide (ITO) (90% In2O3-10%SnO2) has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222) and (400) of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about1.62×10−4 Ω⋅cm.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

scholarly journals Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Optical Properties ◽  
Surface Morphology ◽  
Magnesium Hydroxide ◽  
Dry Deposition ◽  
Visible Range ◽  
Substrate Heating ◽  
Water Effects ◽  
Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

scholarly journals Color Tuning by Oxide Addition in PEDOT:PSS-Based Electrochromic Devices

Polymers ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 179 ◽  
Author(s):  
Delphin Levasseur ◽  
Issam Mjejri ◽  
Thomas Rolland ◽  
Aline Rougier
Keyword(s):  
Thin Films ◽  
Iron Oxide ◽  
Conducting Polymers ◽  
Applied Voltage ◽  
Oxide Content ◽  
Electrochromic Devices ◽  
Careful Evaluation ◽  
Pedot Film ◽  
Oxide Addition ◽  
Dark Blue

Poly(3,4-ethylenedi-oxythiophene) (PEDOT) derivatives conducting polymers are known for their great electrochromic (EC) properties offering a reversible blue switch under an applied voltage. Characterizations of symmetrical EC devices, built on combinations of PEDOT thin films, deposited with a bar coater from commercial inks, and separated by a lithium-based ionic membrane, show highest performance for 800 nm thickness. Tuning of the color is further achieved by mixing the PEDOT film with oxides. Taking, in particular, the example of optically inactive iron oxide Fe2O3, a dark blue to reddish switch, of which intensity depends on the oxide content, is reported. Careful evaluation of the chromaticity parameters L*, a*, and b*, with oxidizing/reducing potentials, evidences a possible monitoring of the bluish tint.

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