Wet chemical deposition of single crystalline epitaxial manganite thin films with atomically flat surface

2013 ◽  
Vol 534 ◽  
pp. 67-69 ◽  
Author(s):  
Amita Mishra ◽  
Anirban Dutta ◽  
Sayanti Samaddar ◽  
Anjan K. Gupta
Keyword(s):  
Thin Films ◽  
Flat Surface ◽  
Chemical Deposition ◽  
Single Crystalline ◽  
Wet Chemical ◽  
Atomically Flat

Structure of NiO and Li-doped NiO single crystalline thin layers with atomically flat surface

2005 ◽  
Vol 486 (1-2) ◽  
pp. 214-217 ◽  
Author(s):  
U.S. Joshi ◽  
R. Takahashi ◽  
Y. Matsumoto ◽  
H. Koinuma
Keyword(s):  
Flat Surface ◽  
Thin Layers ◽  
Single Crystalline ◽  
Atomically Flat

Improved ferroelectric properties of Cr-doped Ba0.7Sr0.3TiO3 thin films prepared by wet chemical deposition

2006 ◽  
Vol 60 (19) ◽  
pp. 2322-2325 ◽  
Author(s):  
J.K. Kim ◽  
S.S. Kim ◽  
W.J. Kim ◽  
T.G. Ha ◽  
I.-S. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Chemical Deposition ◽  
Wet Chemical

Atomically flat surface of (001) textured FePt thin films by residual stress control

2015 ◽  
Vol 354 ◽  
pp. 201-205 ◽  
Author(s):  
S.H. Liu ◽  
S.N. Hsiao ◽  
C.L. Chou ◽  
S.K. Chen ◽  
H.Y. Lee
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Flat Surface ◽  
Stress Control ◽  
Atomically Flat ◽  
Fept Thin Films

UV irradiated wet chemical deposition and characterization of nanostructured tin sulfide thin films

2012 ◽  
Vol 23 (12) ◽  
pp. 2264-2271 ◽  
Author(s):  
A. J. Ragina ◽  
K. V. Murali ◽  
K. C. Preetha ◽  
K. Deepa ◽  
T. L. Remadevi
Keyword(s):  
Thin Films ◽  
Chemical Deposition ◽  
Tin Sulfide ◽  
Wet Chemical

scholarly journals Single-Domain and Atomically Flat Surface of κ-Ga2O3 Thin Films on FZ-Grown ε-GaFeO3 Substrates via Step-Flow Growth Mode

ACS Omega ◽  
2020 ◽  
Vol 5 (45) ◽  
pp. 29585-29592
Author(s):  
Hiroyuki Nishinaka ◽  
Osamu Ueda ◽  
Daisuke Tahara ◽  
Yusuke Ito ◽  
Noriaki Ikenaga ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Surface ◽  
Single Domain ◽  
Growth Mode ◽  
Step Flow ◽  
Step Flow Growth ◽  
Atomically Flat

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

Effective Piezo‐Phototronic Enhancement of Flexible Photodetectors Based on 2D Hybrid Perovskite Ferroelectric Single‐Crystalline Thin‐Films (Adv. Mater. 32/2021)

2021 ◽  
Vol 33 (32) ◽  
pp. 2170252
Author(s):  
Ran Ding ◽  
Yongxin Lyu ◽  
Zehan Wu ◽  
Feng Guo ◽  
Weng Fu Io ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystalline ◽  
Hybrid Perovskite ◽  
2D Hybrid Perovskite

Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates

2013 ◽  
Vol 753 ◽  
pp. 505-509
Author(s):  
Yuichi Sato ◽  
Toshifumi Suzuki ◽  
Hiroyuki Mogami ◽  
Fumito Otake ◽  
Hirotoshi Hatori ◽  
...  
Keyword(s):  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Solid Phase ◽  
Quartz Glass Substrate ◽  
Heteroepitaxial Growth ◽  
Phase Growth ◽  
Single Crystalline ◽  
Glass Substrates ◽  
Amorphous Quartz

Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

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