Atomic composition, structure, and electrical properties of In1-xGaxSb films deposited by magnetron sputtering

2020 ◽  
Vol 709 ◽  
pp. 138213
Author(s):  
Raquel Giulian ◽  
Charles A. Bolzan ◽  
Leandro T. Rossetto ◽  
Antônio Marcos H. de Andrade ◽  
Júlio R. Schoffen ◽  
...  
2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.


2016 ◽  
Author(s):  
Eka Nurfani ◽  
Angga Virdian ◽  
Robi Kurniawan ◽  
Shibghatullah Muhammady ◽  
Inge M. Sutjahja ◽  
...  

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1757-1760
Author(s):  
L. NAVARRETE ◽  
A. MARIÑO ◽  
H. SÁNCHEZ

Ultrathin films of (Bi–Pb)–Sr–Ca–Cu–O (2223) were produced by ex situ RF magnetron sputtering on MgO (100) substrates. Films with different thermal treatments and thickness varying between 30 nm and 300 nm were obtained and studied systematically. A structural characterization of these samples was carried out and correlated with their electrical properties and thickness.


Vacuum ◽  
2004 ◽  
Vol 75 (4) ◽  
pp. 331-338 ◽  
Author(s):  
I.C Oliveira ◽  
K.G Grigorov ◽  
H.S Maciel ◽  
M Massi ◽  
C Otani

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