scholarly journals A method for site-specific and cryogenic specimen fabrication of liquid/solid interfaces for atom probe tomography

2018 ◽  
Vol 194 ◽  
pp. 89-99 ◽  
Author(s):  
D.K. Schreiber ◽  
D.E. Perea ◽  
J.V. Ryan ◽  
J.E. Evans ◽  
J.D. Vienna
Author(s):  
Woo Jun Kwon ◽  
Jisu Ryu ◽  
Christopher H. Kang ◽  
Michael B. Schmidt ◽  
Nicholas Croy

Abstract Focused ion beam (FIB) microscopy is an essential technique for the site-specific sample preparation of atom probe tomography (APT). The site specific APT and automated APT sample preparation by FIB have allowed increased APT sample volume. In the workflow of APT sampling, it is very critical to control depth of the sample where exact region of interest (ROI) for accurate APT analysis. Very precise depth control is required at low kV cleaning process in order to remove the damaged layer by previous high kV FIB process steps. We found low kV cleaning process with 5 kV and followed by 2kV beam conditions delivers better control to reached exact ROI on Z direction. This understanding is key to make APT sample with fully automated fashion.


2013 ◽  
Vol 132 ◽  
pp. 65-69 ◽  
Author(s):  
Ajay Kumar Kambham ◽  
Arul Kumar ◽  
Matthieu Gilbert ◽  
Wilfried Vandervorst

2021 ◽  
Vol 54 (18) ◽  
pp. 184001
Author(s):  
Jith Sarker ◽  
A F M Anhar Uddin Bhuiyan ◽  
Zixuan Feng ◽  
Hongping Zhao ◽  
Baishakhi Mazumder

2007 ◽  
Vol 394 (2) ◽  
pp. 267-269 ◽  
Author(s):  
J.M. Cairney ◽  
D.W. Saxey ◽  
D. McGrouther ◽  
S.P. Ringer

2021 ◽  
Vol 1 ◽  
pp. 122
Author(s):  
Heena Khanchandani ◽  
Se-Ho Kim ◽  
Rama Srinivas Varanasi ◽  
TS Prithiv ◽  
Leigh T. Stephenson ◽  
...  

Hydrogen embrittlement can cause a dramatic deterioration of the mechanical properties of high-strength metallic materials. Despite decades of experimental and modelling studies, the exact underlying mechanisms behind hydrogen embrittlement remain elusive. To unlock understanding of the mechanism and thereby help mitigate the influence of hydrogen and the associated embrittlement, it is essential to examine the interactions of hydrogen with structural defects such as grain boundaries, dislocations and stacking faults. Atom probe tomography (APT) can, in principle, analyse hydrogen located specifically at such microstructural features but faces strong challenges when it comes to charging specimens with hydrogen or deuterium. Here, we describe three different workflows enabling hydrogen/deuterium charging of site-specific APT specimens: namely cathodic, plasma and gas charging. We discuss in detail the caveats of the different approaches in order to help future research efforts and facilitate further studies of hydrogen in metals. Our study demonstrates successful cathodic and gas charging, with the latter being more promising for the analysis of the high-strength steels at the core of our work.


Author(s):  
D. J. Larson ◽  
D. Lawrence ◽  
D. Olson ◽  
T. J. Prosa ◽  
R. M. Ulfig ◽  
...  

Abstract There are many opportunities in semiconductor processing where atom probe tomography (APT) analysis of a finished product is desirable; competitive analysis and failure analysis are two good examples, and only recently have APT results been obtained from fully processed "off-the-shelf" transistor structures that are part of a finished product. This paper explores the feasibility of APT analysis for fully packaged integrated-circuit microelectronic devices by detailing the various options available in specimen preparation and the resulting analyses. The goal of this work is to take an off-the-shelf microelectronics product and perform APT analysis on various device-level components. This work demonstrates that a wealth of high quality information may be obtained from site-specific APT analysis of post-production microelectronic devices. The yield of useful results from such analyses has not yet been determined, but the small number of specimens analyses (four) yielded quality results in the first attempt.


Author(s):  
Roger L. Alvis ◽  
Zdenek Kral ◽  
Trevan Landin ◽  
Jonathan Orsborn ◽  
Ty J. Prosa ◽  
...  

Abstract An advanced technique for site-specific Atom Probe Tomography (APT) is presented. An APT sample is prepared from a targeted semiconductor device (commercially available product based on 14nm finFET technology). Using orthogonal views of the sample in STEM while FIB milling, a viable APT sample is created with the tip of the sample positioned over the lightly-doped drain (LDD) region of a pre-defined PFET. The resulting APT sample has optimal geometry and minimal amorphization damage.


Sign in / Sign up

Export Citation Format

Share Document