Comparative study of amorphous indium tin oxide prepared by pulsed-DC and unbalanced RF magnetron sputtering at low power and low temperature conditions for heterojunction silicon wafer solar cell applications

Vacuum ◽  
2015 ◽  
Vol 119 ◽  
pp. 68-76 ◽  
Author(s):  
Mei Huang ◽  
Ziv Hameiri ◽  
Armin G. Aberle ◽  
Thomas Mueller
Keyword(s):  
Solar Cell ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Low Power ◽  
Silicon Wafer ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Pulsed Dc

Low temperature deposition of Indium tin oxide (ITO) films on plastic substrates

2005 ◽  
Vol 869 ◽  
Author(s):  
Vandana Singh ◽  
B. Saswat ◽  
Satyendra Kumar
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Light Emitting ◽  
Plastic Substrates ◽  
Organic Light ◽  
Temperature Deposition ◽  
Ito Films

AbstractOrganic light emitting diodes (OLEDs) require a transparent conducting oxide (TCO) electrode for injection of charge carriers and the emitted light to come out. In order to exploit the full flexibility of organic semiconductor based large area electronic devices, the deposition of TCO on plastic substrates is essential, which prohibits high temperature processing. Therefore, low temperature deposition of Indium tin oxide (ITO) films is very important for flat panel displays and solar cells. Here we have carried out a systematic study of ITO deposition on plastic substrates using RF magnetron sputtering. For the optimization of structural, electrical and optical properties of ITO, various experiments such as X-ray diffractometer, transmission measurements, sheet resistance and AFM were employed. These properties were investigated as a function of substrate temperature, deposition time and RF power. From these experiments, we obtained a reasonably low sheet resistance (˜ 14;Ω / □) and high transmittance (˜75%) in the visible region on plastic substrates. We also observed that these films are not much affected by atmosphere and does not degrade with time. These ITO films deposited by RF magnetron sputtering on plastic substrates can be use as anode for flexible organic light emitting displays.

Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3364-3369 ◽  
Author(s):  
Wenli Deng ◽  
Taizo Ohgi ◽  
Hitoshi Nejo ◽  
Daisuke Fujita
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Tin Oxide Films

Indium–tin oxide films obtained by DC magnetron sputtering for improved Si heterojunction solar cell applications

2015 ◽  
Vol 24 (11) ◽  
pp. 117703 ◽  
Author(s):  
Jin-Hua Gu ◽  
Jia-Le Si ◽  
Jiu-Xiu Wang ◽  
Ya-Yang Feng ◽  
Xiao-Yong Gao ◽  
...  
Keyword(s):  
Solar Cell ◽  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Heterojunction Solar Cell ◽  
Dc Magnetron Sputtering ◽  
Tin Oxide Films

Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

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