Characterization of charges in fluorinated polyimide film with different thermal history by using capacitance–voltage methods

1999 ◽  
Vol 34 (6) ◽  
pp. 869-876 ◽  
Author(s):  
Y.K. Lee ◽  
S.P. Murarka
Keyword(s):  
Thermal History ◽  
Polyimide Film ◽  
Fluorinated Polyimide ◽  
Capacitance Voltage

STUDY OF CHARGES IN FLUORINATED POLYIMIDE FILM BY USING CAPACITANCE-VOLTAGE METHOD

2006 ◽  
Vol 20 (07) ◽  
pp. 379-383
Author(s):  
YONG K. LEE
Keyword(s):  
Activation Energy ◽  
Polyimide Film ◽  
Test Structure ◽  
Mobile Charge ◽  
Fluorinated Polyimide ◽  
Capacitance Voltage ◽  
Charge Concentration

The deviations of ideality, such as shifts or distortions, in the Capacitance-Voltage (C-V) curve were examined to characterize charges in fluorinated polyimide film in MPOS ( Cu -fluorinated polyimide film- SiO 2 -Si ) test structure. It was observed that charges in fluorinated polyimide film hard baked at 325°C and annealed at 425°C were mobile and positive charged. The mobile charge concentration was 1011/ cm 2 and the activation energy of the drift of positive mobile charge was 0.6 V.

STUDY OF HYSTERESIS BEHAVIOR OF CHARGES IN FLUORINATED POLYIMIDE FILM BY USING CAPACITANCE-VOLTAGE METHOD

2006 ◽  
Vol 20 (08) ◽  
pp. 445-449
Author(s):  
YONG K. LEE
Keyword(s):  
Structural Transition ◽  
Polyimide Film ◽  
Test Structure ◽  
Abrupt Increase ◽  
Fixed Amount ◽  
Hysteresis Behavior ◽  
Fluorinated Polyimide ◽  
Capacitance Voltage ◽  
Mobile Charges

The hysteresis behavior of charges was observed in Capacitance-Voltage (C-V) curve characteristics of fluorinated polyimide film in MPS ( Cu -fluorinated polyimide film- Si ) test structure. The degree of hysteresis was almost constant up to 150°C and then sharply increased beyond 150°C. Hysteresis behavior up to 150°C was due to a fixed amount of mobile charges at the interface between fluorinated polyimide film and Si and one beyond 150°C was due to abrupt increase of mobile charges and their enhanced movement in the bulk of fluorinated polyimide film due to structural transition of fluorinated polyimide film.

Characterization of Fluorinated Polyimide Films

1992 ◽  
Vol 264 ◽  
Author(s):  
Pradnya V. Nagarkar ◽  
Jiong Ping Lu ◽  
David Volfson ◽  
Klavs F. Jensen ◽  
Stephen D. Senturia
Keyword(s):  
Photoelectron Spectroscopy ◽  
Polyimide Film ◽  
Binding Energies ◽  
Polyimide Films ◽  
Chemical Modifications ◽  
X Ray ◽  
Fluorinated Polyimide ◽  
Peak Assignment ◽  
Good Agreement

Abstract:X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) have been used to characterize the polyimide film based on 4,4′ hexafluoro-isopropylidene -bis pthalic anhydride (HFDA) and 4,4′ -bis (4-aminophenoxy) biphenyl (APBP). Films of varying thicknesses made from diluted precursors were studied by IR and XPS. An elemental analysis and a tentative peak assignment for C 1s in XPS is presented. The HFDA-APBP thick films are stoichiometric in composition and binding energies are in good agreement with data on hexafluorodianhydride-oxydianiline (HFDA-ODA). For thinner films, certain chemical modifications were observed at high cure temperatures.

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

dC/dV and CV Characterization of Gate Resistance Defects in eDRAM Circuits

2013 ◽  
Author(s):  
Sweta Pendyala ◽  
Dave Albert ◽  
Katherine Hawkins ◽  
Michael Tenney
Keyword(s):  
Deep Submicron ◽  
Work Flow ◽  
Localization Technique ◽  
Characterization Techniques ◽  
Capacitance Voltage ◽  
Gate Resistance

Abstract Resistive gate defects are unusual and difficult to detect with conventional techniques [1] especially on advanced devices manufactured with deep submicron SOI technologies. An advanced localization technique such as Scanning Capacitance Imaging is essential for localizing these defects, which can be followed by DC probing, dC/dV, CV (Capacitance-Voltage) measurements to completely characterize the defect. This paper presents a case study demonstrating this work flow of characterization techniques.

Transient color changes in oxidative-stable fluorinated polyimide film for flexible display substrates

RSC Advances ◽  
2015 ◽  
Vol 5 (71) ◽  
pp. 57339-57345 ◽  
Author(s):  
Yooseong Yang ◽  
Youngsuk Jung ◽  
Myung Dong Cho ◽  
Seung Geol Lee ◽  
Soonchul Kwon
Keyword(s):  
Optical Properties ◽  
Polyimide Film ◽  
Flexible Display ◽  
Color Changes ◽  
Fluorinated Polyimide ◽  
Fluorinated Polyimides ◽  
Thermal Imidization ◽  
Yellow Index

Stable optical properties of high transmittance and low yellow index, which are required for a polyimide film as a flexible display substrate could be affected by thermal imidization even in oxidative-stable fluorinated polyimides.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

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