Calculation of the probability of hole injection from polysilicon gate into silicon dioxide in MOS structures under high-field stress

1999 ◽  
Vol 43 (9) ◽  
pp. 1677-1687 ◽  
Author(s):  
Piyas Samanta
Keyword(s):  
Silicon Dioxide ◽  
High Field ◽  
Hole Injection ◽  
Field Stress ◽  
Polysilicon Gate ◽  
Mos Structures

Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress

1996 ◽  
Vol 428 ◽  
Author(s):  
T. Brożek ◽  
Y. D. Chan ◽  
C. R. Viswanathan
Keyword(s):  
Silicon Dioxide ◽  
High Field ◽  
Silicon Oxide ◽  
Electron Injection ◽  
Oxide Semiconductor ◽  
Hole Injection ◽  
Oxide Interface ◽  
Report Generation ◽  
Oxide Layers ◽  
Hole Trapping

AbstractHigh field electron injection in silicon oxide layers in metal-oxide-semiconductor system is widely known to degrade thin silicon oxide layers and the silicon-oxide interface, eventually leading to catastrophic oxide breakdown. In this work we report generation of hole traps under high-field stressing of thermal silicon dioxide layers on silicon. Excess hole trapping on newly generated hole traps is observed by substrate hot-hole injection in 9 nm oxide PMOS transistors after high-field Fowler-Nordheim stress followed by standard post-metallization annealing in nitrogen. The concentration of generated traps is stress-polarity dependent and increases with electron fluence during degrading stress. Relaxation behavior under switching oxide fields indicates that the nature of hole trapping sites is different from anomalous positive charge centers. A correlation of density of generated hole traps with the amount of generated electron traps shows that both types of traps are effectively generated in the oxide layer under Fowler-Nordheim tunneling electron injection.

Oxide wearout phenomena of ultrathin SiO2 film during high-field stress

1992 ◽  
Vol 28 (16) ◽  
pp. 1516 ◽  
Author(s):  
H. Fukuda ◽  
M. Yasuda ◽  
T. Iwabuchi
Keyword(s):  
High Field ◽  
Sio2 Film ◽  
Field Stress

Annealing of oxide fixed charges in scaled polysilicon gate MOS structures

1985 ◽  
Vol 32 (5) ◽  
pp. 918-925 ◽  
Author(s):  
Dah-Bin Kao ◽  
K.C. Saraswat ◽  
J.P. McVittie
Keyword(s):  
Fixed Charges ◽  
Polysilicon Gate ◽  
Mos Structures

scholarly journals Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs

2009 ◽  
Vol 58 (1) ◽  
pp. 511
Author(s):  
Gu Wen-Ping ◽  
Hao Yue ◽  
Zhang Jin-Cheng ◽  
Wang Chong ◽  
Feng Qian ◽  
...  
Keyword(s):  
High Field ◽  
Field Stress ◽  
Gan Hemts

Comparison of Defect Generation by irradiation and High Field Stressing in MOS Structures

1990 ◽  
Vol 36 (3-4) ◽  
pp. 198-202
Author(s):  
R Lal ◽  
R M Patrikar ◽  
D Sarkar ◽  
J Vasi
Keyword(s):  
High Field ◽  
Defect Generation ◽  
Mos Structures
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