scholarly journals Терморезистивный полупроводниковый SiC/Si-композиционный материал

2019 ◽  
Vol 53 (2) ◽  
pp. 231
Author(s):  
С.К. Брантов ◽  
Е.Б. Якимов
Keyword(s):  
Silicon Carbide ◽  
Composite Material ◽  
Thermal Sensitivity ◽  
New Method ◽  
Carbon Foil ◽  
Temperature Range ◽  
Silicon Melt

AbstractA new method for growing a layer of self-bonded silicon-carbide crystallites on the surface of a flexible carbon foil with subsequent impregnation of the formed structures by silicon melt is developed. Thermistors for a temperature range of 900–1450 K with s thermal sensitivity attaining 11 350 K able to be used in air are fabricated based on this composite material. The structural and electrophysical characteristics of the mentioned material are investigated.

Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties

2013 ◽  
Vol 6 (3) ◽  
pp. 253-257 ◽  
Author(s):  
Sergey Brantov ◽  
Dmitry Borisenko ◽  
Ivan Shmytko ◽  
Edward Steinman
Keyword(s):  
Silicon Carbide ◽  
Carbon Foil ◽  
Carbide Layer

Vibrations of Functionally Graded Shells

2007 ◽  
Author(s):  
Serge Abrate
Keyword(s):  
Composite Material ◽  
Modulus Of Elasticity ◽  
Poisson’S Ratio ◽  
Functionally Graded ◽  
New Method ◽  
Poisson's Ratio ◽  
Tabular Form ◽  
Graded Structures ◽  
Functionally Graded Structures

The behavior of functionally graded structures has received a great deal of attention in recent years. Usually, these structures are made out of a composite material with a modulus of elasticity, a Poisson’s ratio, and a density that vary through the thickness. The non-uniformity through the thickness introduces coupling between the transverse deformations and the deformations of the mid-surface. Previous publications have shown how to account for these added complexities and have presented extensive results in tabular form. In this article, available results are used to show that the behavior of functionally graded shells is similar to that of homogeneous isotropic shells. It is well known that for isotropic shells, results can be presented in non-dimensional form so that, once results are obtained for one material, they can be simply scaled to obtain the corresponding results for shells made out of another material. The same can then be done for functionally graded shells. In addition, if functionally graded shells behave like homogeneous shells, no new method of analysis is required. The second part of the paper examines why this is true.

Cutting Speed of Electric Discharge Machining for SiC Ingot

2012 ◽  
Vol 717-720 ◽  
pp. 861-864 ◽  
Author(s):  
Hideki Yamada ◽  
Satarou Yamaguchi ◽  
Norimasa Yamamoto ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Electric Discharge ◽  
Cutting Speed ◽  
Experimental Results ◽  
New Method ◽  
Electric Discharge Machining ◽  
Hard Materials ◽  
Diameter Ingot ◽  
Diamond Saw

A new method based on electric discharge machining (EDM) was developed for cutting a silicon carbide (SiC) ingot. The EDM method is a very useful technique to cut hard materials like SiC. By cutting with the EDM method, kerf loss and roughness of sample are generally smaller than those obtained by cutting with a diamond saw. Moreover, the warpage is smaller than that by the diamond saw cutting, and the cutting speed can be 10 times faster than that of the diamond saw at the present time. We used wires of 50 mm and 100 mm diameters in the experiments, and the experimental results of the cutting speed and the kerf losses are presented. The kerf loss of the 50 mm wire is less than 100 mm, and the cutting speed is about 0.8 mm/min for the thickness of a 6 mm SiC ingot. If we can maintain the cutting speed, the slicing time of a 2 inches diameter ingot would be about seven hours.

Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt

2002 ◽  
Vol 57 (2) ◽  
pp. 307-314
Author(s):  
M. Nasir Khan ◽  
Shin-ichi Nishizawa ◽  
Tomohisa Kato ◽  
Ryoji Kosugi ◽  
Kazuo Arai
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Layer ◽  
Seed Crystals ◽  
Silicon Melt

A heat-resistant preceramic polymer with broad working temperature range for silicon carbide joining

2018 ◽  
Vol 38 (1) ◽  
pp. 67-74 ◽  
Author(s):  
Bo Tang ◽  
Mingchao Wang ◽  
Ruiming Liu ◽  
Jiachen Liu ◽  
Haiyan Du ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Preceramic Polymer ◽  
Temperature Range ◽  
Working Temperature ◽  
Heat Resistant

CMOS Circuits on Silicon Carbide for High Temperature Operation

2014 ◽  
Vol 1693 ◽  
Author(s):  
David T. Clark ◽  
Robin F. Thompson ◽  
Aled E. Murphy ◽  
David A. Smith ◽  
Ewan P. Ramsay ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Logic Circuits ◽  
Digital Logic ◽  
Cmos Integrated Circuit ◽  
Temperature Range ◽  
Simple Logic

ABSTRACTWe present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range.Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature “micro-oven” system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.

ASPECTS OF STRUCTURE FORMATION DISPERSION-STRENGTHENED METAL COMPOSITE MATERIAL OBTAINED ON THE BASIS OF SHAVINGS AND POWDER OF ALUMINUM CORROSION-RESISTANT ALLOY

2021 ◽  
pp. 39-46
Author(s):  
A.V. Gololobov ◽  
◽  
A.N. Nyafkin ◽  
A.N. Zhabin ◽  
◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Composite Material ◽  
Mechanical Alloying ◽  
Structure Formation ◽  
Metal Composite ◽  
Corrosion Resistant ◽  
Resistant Alloy ◽  
Aluminum Corrosion ◽  
Corrosion Resistant Alloy

A metal composite material (MCM) based on an aluminum corrosion-resistant alloy of the AMg6 brand, containing 22.5 % (vol.) Silicon carbide, obtained by mechanical alloying, has been investigated. Aspects of the formation of the MCM structure based on chips and powder from this alloy are considered. The influence of the initial components on the structure of the dispersion-strengthened MCM was investigated, and samples were made from this composite material.

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

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