Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes

Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region.

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Parameters estimation of SPICE models for silicon carbide devices

2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition ◽

10.23919/empc.2017.8346918 ◽

2017 ◽

Cited By ~ 2

Author(s):

Damian Bisewski

Keyword(s):

Silicon Carbide ◽

Parameters Estimation

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Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/hitec-spotbhare-tp22 ◽

2010 ◽

Vol 2010 (HITEC) ◽

pp. 000144-000151

Author(s):

Siddharth Potbhare ◽

Akin Akturk ◽

Neil Goldsman ◽

James M. McGarrity ◽

Anant Agarwal

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

High Efficiency ◽

Schottky Diodes ◽

Power Converter ◽

Electronic Systems ◽

High Temperature Electronics ◽

New Material ◽

Silicon Power Devices ◽

Relationship Of

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.

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High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension

Materials Science Forum - Silicon Carbide and Related Materials 2006 ◽

10.4028/0-87849-442-1.873 ◽

2007 ◽

pp. 873-876 ◽

Cited By ~ 1

Author(s):

Konstantin V. Vassilevski ◽

I. Nikitina ◽

A.B. Horsfall ◽

Nicolas G. Wright ◽

Anthony G. O'Neill ◽

...

Keyword(s):

Silicon Carbide ◽

High Voltage ◽

Schottky Diodes

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High Voltage Silicon Carbide Devices

MRS Proceedings ◽

10.1557/proc-512-77 ◽

1998 ◽

Vol 512 ◽

Cited By ~ 22

Author(s):

B. Jayant Baliga

Keyword(s):

Silicon Carbide ◽

Breakdown Voltage ◽

High Voltage ◽

Impact Ionization ◽

Voltage Drop ◽

Schottky Diodes ◽

Inversion Layer ◽

Drift Region ◽

Edge Termination ◽

Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

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Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.857 ◽

2009 ◽

Vol 615-617 ◽

pp. 857-860

Author(s):

Donatella Puglisi ◽

Gaetano Foti ◽

Giuseppe Bertuccio

Keyword(s):

Silicon Carbide ◽

Doping Concentration ◽

Diffusion Length ◽

Schottky Diodes ◽

Radiation Detectors ◽

Electron Hole ◽

Active Volume ◽

Particle Detectors ◽

Electron Hole Pair ◽

Nuclear Detectors

The achievement of nuclear detectors in Silicon Carbide imposes severe constraints on the electronic quality and thickness of the material due to the relatively high value of the energy required to generate an electron-hole pair (7.8 eV) in this material compared to the value for Si (3.6 eV). In this work, 4H-SiC charged particle detectors were realised using epitaxial layers of n-type doping as active region. The thickness of the epilayer is always below 80 μm with a net doping concentration in the range of 8 x 1013 to 1016 cm-3. These properties allowed the fabrication of Schottky diodes that operate well as radiation detectors. At low doping concentration, the epilayer is totally depleted at quite low reverse bias (≈ 50 V), thereby obtaining the maximum active volume.

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Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer

10.1063/1.5119507 ◽

2019 ◽

Author(s):

Bohumír Zaťko ◽

Ladislav Hrubčín ◽

Pavol Boháček ◽

Jozef Osvald ◽

Andrea Šagátová ◽

...

Keyword(s):

Electrical Properties ◽

Epitaxial Layer ◽

Schottky Diodes ◽

High Quality

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Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case

Circuit World ◽

10.1108/cw-10-2016-0046 ◽

2017 ◽

Vol 43 (1) ◽

pp. 38-42 ◽

Cited By ~ 4

Author(s):

Krzysztof Górecki ◽

Damian Bisewski ◽

Janusz Zarębski ◽

Ryszard Kisiel ◽

Marcin Myśliwiec

Keyword(s):

Silicon Carbide ◽

Design Methodology ◽

Schottky Diodes ◽

Semiconductor Materials ◽

Thermal Coupling ◽

Internal Temperature ◽

Content Type ◽

Self Heating ◽

The Common ◽

Transient Thermal

Purpose This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case. Design/methodology/approach The idea of measurements of mutual transient thermal impedances of the investigated device is described. Findings The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out. Research limitations/implications The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials. Originality/value The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.

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3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.555 ◽

2011 ◽

Vol 679-680 ◽

pp. 555-558 ◽

Cited By ~ 1

Author(s):

Konstantin Vassilevski ◽

Irina P. Nikitina ◽

Alton B. Horsfall ◽

Nicolas G. Wright ◽

C. Mark Johnson

Keyword(s):

Silicon Carbide ◽

Leakage Current ◽

Schottky Diodes ◽

Schottky Contacts ◽

Blocking Layer ◽

Donor Concentration ◽

Ion Etching ◽

Ambient Temperatures ◽

Heavily Doped ◽

The Impact

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.

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