Time-resolved STM light emission from an evaporated Au film

2001 ◽  
Vol 169-170 ◽  
pp. 198-201 ◽  
Author(s):  
Y. Uehara ◽  
A. Yagami ◽  
K.J. Ito ◽  
S. Ushioda
Keyword(s):  
Light Emission ◽  
Time Resolved ◽  
Au Film ◽  
Stm Light Emission

Time-Resolved Spectroscopy of Laser-Induced Light Emission from an Evaporated Au Film in the Kretschmann Geometry

2008 ◽  
Vol 47 (7) ◽  
pp. 6114-6116 ◽  
Author(s):  
Tomonori Sanbongi ◽  
Satoshi Katano ◽  
Yoichi Uehara ◽  
Sukekatsu Ushioda
Keyword(s):  
Light Emission ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Au Film

STM light emission spectroscopy of Au film

1992 ◽  
Vol 60-61 ◽  
pp. 448-453 ◽  
Author(s):  
S. Ushioda ◽  
Y. Uehara ◽  
M. Kuwahara
Keyword(s):  
Emission Spectroscopy ◽  
Light Emission ◽  
Au Film ◽  
Stm Light Emission

Analysis of 0.13 μm CMOS Technology Using Time Resolved Light Emission

2004 ◽  
Author(s):  
Peter Ouimet ◽  
Jason Goertz ◽  
Olivier Rinaudo ◽  
Lousinda Long ◽  
Simon Yeung
Keyword(s):  
Light Emission ◽  
Cmos Technology ◽  
Case Histories ◽  
Time Resolved ◽  
Scan Chain

Abstract This paper describes case histories of 0.13 um bulk CMOS technology analyses using Time Resolved Light Emission (TRLEM). Using this technique, scan chain, timing, and logic failures are shown to be quickly and decisively identified thereby meeting the need for rapid feedback on 1st silicon failures and process excursions.

scholarly journals STM Light Emission Spectroscopy of Surface Micro-Structures.

Hyomen Kagaku ◽  
1995 ◽  
Vol 16 (5) ◽  
pp. 286-290
Author(s):  
Yoichi UEHARA ◽  
Sukekatsu USHIODA
Keyword(s):  
Emission Spectroscopy ◽  
Light Emission ◽  
Stm Light Emission ◽  
Micro Structures

Optical Properties and Electronic Structures of Sexithiophene

2010 ◽  
Vol 428-429 ◽  
pp. 475-478 ◽  
Author(s):  
Bao Gai Zhai ◽  
Yuan Ming Huang
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Ultraviolet Light ◽  
Organic Semiconductor ◽  
Electronic Structures ◽  
Light Emission ◽  
Visible Spectroscopy ◽  
Time Resolved ◽  
Pump And Probe ◽  
Green Photoluminescence

The optical properties and electronic structures of an organic semiconductor sexithiophene have been investigated with ultraviolet-visible spectroscopy, cw photospectroscopy and time-resolved photospectroscopy, respectively. Sexithiophene in dilute tetrahydrofuran solutions can absorb photons at 400 nm while it can give off strong green photoluminescence at 550 nm under the excitation of 325 nm ultraviolet light. With the assistance of calculated electronic structures and pump-and-probe characterization, our results indicate that both the optical absorption and the light emission of the sexithiophene are controlled by the p-conjugation of the oligothiophene.

Space and time resolved representation of a vacuum arc light emission

1999 ◽  
Vol 32 (7) ◽  
pp. 785-789
Author(s):  
N Georgescu ◽  
G Sandolache ◽  
V Zoita
Keyword(s):  
Light Emission ◽  
Vacuum Arc ◽  
Time Resolved ◽  
Space And Time

STM-Light Emission From Metal Deposited Semiconductor Surfaces

1999 ◽  
Vol 588 ◽  
Author(s):  
N. Yamamoto ◽  
S. Kagami ◽  
H. Minoda
Keyword(s):  
Scanning Tunneling Microscope ◽  
High Spatial Resolution ◽  
Light Emission ◽  
Detection System ◽  
Single Atom ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Silver Films ◽  
Residual Gas ◽  
Stm Light Emission

AbstractLight detection system combined with a UHV-scanning tunneling microscope (STM) was applied to the study of silver films deposited on Si(111) surfaces. Photon maps clearly show single atom height steps and terraces on an Ag(111) surface with high spatial resolution of nanometer scale. Chemical reaction on the Ag surface with residual gas was clearly revealed in the photon map. In the photon map of the thin Ag film of 2˜3 ML in thick, no contrast appears between the terraces, and a characteristic bright contrast appears at the single atom height steps. The local plasmon model does not readily explain those contrasts.

Optical Characterization of Individual Nanostructures by STM Light Emission

1999 ◽  
Vol 588 ◽  
Author(s):  
S. Ushioda
Keyword(s):  
Quantum Wells ◽  
Scanning Tunneling Microscope ◽  
Light Emission ◽  
Electronic Transitions ◽  
Scanning Tunneling ◽  
Surface Geometry ◽  
Future Expectations ◽  
Semiconductor Quantum Wells ◽  
Stm Light Emission

AbstractVisible light is emitted when electrons (holes) are injected into a sample from the tip of the scanning tunneling microscope (STM). By analyzing the spectra of the emitted light, one can not only determine the surface geometry by usual STM imaging, but also learn the electronic and optical properties of specific individual nanostructures. This technique has been applied to investigate the electronic transitions of individual protrusions of porous Si and semiconductor quantum wells of AlGaAs/GaAs. The usefulness, limitations, and future expectations of this novel technique are discussed.

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