MOCVD with gas phase composition control for the growth of high quality YBa2Cu3O7−x thin films for microwave applications

1997 ◽  
Vol 251 (1-2) ◽  
pp. 292-296 ◽  
Author(s):  
J. Musolf
ChemInform ◽  
2010 ◽  
Vol 30 (51) ◽  
pp. no-no
Author(s):  
William J. DeSisto ◽  
Edward J. Cukauskas ◽  
Brian J. Rappoli ◽  
James C. Culbertson ◽  
John H. Claassen

2003 ◽  
Vol 24 (4) ◽  
pp. 330-339 ◽  
Author(s):  
A. Yu. Zavrazhnov ◽  
D. N. Turchen ◽  
A. V. Naumov ◽  
V. P. Zlomanov

2010 ◽  
Vol 25 (10) ◽  
pp. 1886-1889 ◽  
Author(s):  
T. Ohnishi ◽  
B.T. Hang ◽  
X. Xu ◽  
M. Osada ◽  
K. Takada

Thin films of c-axis-oriented LiCoO2 were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatly affect the crystal quality of the epitaxial LiCoO2 thin films. In addition, high-quality LiCoO2 thin films were found to grow without any impurity phases under relatively low oxygen partial pressure, although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity. This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensable to grow high-quality complex compound thin films by PLD.


Langmuir ◽  
2017 ◽  
Vol 33 (12) ◽  
pp. 3028-3039 ◽  
Author(s):  
Eric S. Fried ◽  
Yue-Ming Li ◽  
M. Lane Gilchrist

2015 ◽  
Vol 3 (32) ◽  
pp. 8364-8371 ◽  
Author(s):  
T. S. Tripathi ◽  
Janne-Petteri Niemelä ◽  
Maarit Karppinen

Atomic layer deposition (ALD) is a vital gas-phase technique for atomic-level thickness-controlled deposition of high-quality thin films of CuCrO2 on various substrate morphologies owing to its self-limiting gas-surface reaction mechanism.


2010 ◽  
Vol 645-648 ◽  
pp. 49-54 ◽  
Author(s):  
Gabriel Ferro

The objective of this review is to set the present state of the art of 3C-SiC crystalline growth by emphasizing the new and promising trends related to this polytype elaboration. The need of high quality 3C seed is showed to be more important than for other polytypes, in order to avoid β→ transformation during high temperature bulk growth. The effect of various parameters, such as supersaturation, gas phase composition, strain or impurities, is discussed. Recent results obtained using vapour-liquid-solid mechanism and continuous feed vapour phase transport are bringing new insight on 3C-SiC stability and setting new standards of material quality.


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