Thermal oxidation of silicon carbide: A comparison of n-type and p-type doped epitaxial layers

This paper deals with the comparison of several MOS structures with different rapid thermal oxidation processes (RTO) carried out on Off and On-axis SiC material. A first set contains MOS capacitance structures on n-epitaxial layers, while a second set of MOS capacitance are built on p-implanted layers. Both sets include On and Off-Axis angle cuts. Furthermore, n-MOSFETs have been fabricated on On-axis p-implanted layers with the best oxidation process selected from the MOS capacitance study. The final objective is to show the performances of these On-axis p-implanted n-MOSFETs and to evidence the associated lower surface roughness at the SiO2/SiC interface.

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Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.324.265 ◽

2011 ◽

Vol 324 ◽

pp. 265-268 ◽

Cited By ~ 1

Author(s):

Laurent Ottaviani ◽

Stéphane Biondo ◽

Michel Kazan ◽

Olivier Palais ◽

Julian Duchaine ◽

...

Keyword(s):

Surface Roughness ◽

Silicon Carbide ◽

Electrical Activity ◽

Sheet Resistance ◽

Beam Line ◽

Subsequent Annealing ◽

Electrical Activation ◽

Epitaxial Layers ◽

Residual Damage ◽

P Type

This paper focuses on the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers using two kinds of Nitrogen implantations. The standard beam ion implantations and PULSIONTM processes were performed at two distinct energies (700 eV and 7 keV), and the subsequent annealing was held at 1600°C in a resistive furnace specifically adapted to SiC material. No measurable electrical activity was obtained for both implantations performed at 700 eV, due to some outdiffusion of N dopants during the annealing despite a low surface roughness (rms ~ 1.4 nm) and no residual damage detected by RBS/C. A higher sheet resistance was measured in plasma-implanted samples at 7 keV (in comparison with beam-line implanted samples), which is partly related to N outdiffusion. The profiles of N atoms beam-implanted at 7 keV are not affected by the annealing. The corresponding electrical activation is fully completed.

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Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

MRS Proceedings ◽

10.1557/proc-403-489 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 1

Author(s):

T. S. Hayes ◽

F. T. Ray ◽

K. P. Trumble ◽

E. P. Kvam

Keyword(s):

Thin Film ◽

Thin Films ◽

Silicon Carbide ◽

Ohmic Contacts ◽

Microstructure Development ◽

P Type ◽

Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

Physics of the Solid State ◽

10.1134/s1063783415100042 ◽

2015 ◽

Vol 57 (10) ◽

pp. 1966-1971 ◽

Cited By ~ 2

Author(s):

V. N. Bessolov ◽

A. S. Grashchenko ◽

E. V. Konenkova ◽

A. V. Myasoedov ◽

A. V. Osipov ◽

...

Keyword(s):

Buffer Layer ◽

Growth Mechanism ◽

Epitaxial Layers ◽

P Type

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Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1415 ◽

2007 ◽

Vol 46 (4A) ◽

pp. 1415-1426 ◽

Cited By ~ 46

Author(s):

Shinsuke Miyajima ◽

Akira Yamada ◽

Makoto Konagai

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Low Temperatures ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Hot Wire ◽

Nanocrystalline Silicon Carbide ◽

P Type

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SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

Materials Science Forum ◽

10.4028/www.scientific.net/msf.556-557.153 ◽

2007 ◽

Vol 556-557 ◽

pp. 153-156

Author(s):

Chi Kwon Park ◽

Gi Sub Lee ◽

Ju Young Lee ◽

Myung Ok Kyun ◽

Won Jae Lee ◽

...

Keyword(s):

Electrical Properties ◽

Epitaxial Layer ◽

Light Emission ◽

Epitaxial Layers ◽

Current Voltage ◽

Space Technique ◽

Sublimation Method ◽

Device Applications ◽

P Type ◽

Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

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Silicon Carbide Base Ceramic Fiber Synthesis from Polycarbosilane-Modified Polymethylsilane Blend Polymers by Melt Spinning

Materials Science Forum ◽

10.4028/www.scientific.net/msf.675-677.139 ◽

2011 ◽

Vol 675-677 ◽

pp. 139-142

Author(s):

Xin Xing ◽

Lin Liu ◽

Feng Cao ◽

Xiao Dong Li ◽

Zeng Yong Chu ◽

...

Keyword(s):

Silicon Carbide ◽

Tensile Strength ◽

Thermal Oxidation ◽

Melt Spinning ◽

Ceramic Fiber ◽

Ceramic Yield ◽

Base Ceramic

A melt-spinnable precursor for SiC based fibers was prepared from blend polymers of polycarbosilane (PCS) and modified polymethylsilane (M-PMS). The blend polymers cured at 320°C are different from M-PMS and PCS. The ceramic yield of these blend polymers is about 83%. The C/Si ratio of M-PMS/PCS derived ceramics (pyrolyzed at 1250°C) is linear to the content of MPMS in M-PMS/PCS. After melt spinning, thermal oxidation curing, and pyrolysis, Si-C-O fibers were obtained. The diameter and the tensile strength of the resulted fibers are 16.5μm and 1.62GPa, respectively.

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