Electron beam testing of multilevel metal integrated circuits

1991 ◽  
Vol 49 ◽  
pp. 830-831
Author(s):  
P. E. Russell ◽  
Z. J. Radzimski ◽  
D. A. Ricks ◽  
J. P. Vitarelli
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Measurement Techniques ◽  
Ion Beam Etching ◽  
Voltage Contrast ◽  
Modelling Effort ◽  
Established Technique

Fundamentally, voltage contrast is a well established technique for determination of voltages on metal surface which can be directly probed with an electron beam. However, actual integrated circuits (IC) consist of two or more conducting layers (metal and doped polysilicon) separated by dielectrics and covered by a dielectric passivation layer. Our work has addressed: i) the removal of dielectric layers (depassivation) by reactive ion etching (RIE) or selectively by focused ion beam etching to allow access to exposed metal lines; ii) modelling effort to understand how the materials and geometric parameters of multilevel IC's affect voltage contrast measurements, and iii) improvements in retarding field spectrometer based measurement techniques.

Carbon Coating for Electron Beam Testing and Focus Ion Beam Reconfiguration

1996 ◽  
Author(s):  
P. Perdu ◽  
G. Perez ◽  
M. Dupire ◽  
B. Benteo
Keyword(s):  
Electron Beam ◽  
Sample Preparation ◽  
Carbon Coating ◽  
Focused Ion Beam ◽  
Sacrificial Layer ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Fault Analysis ◽  
Voltage Contrast ◽  
The Right

Abstract To debug ASIC we likely use accurate tools such as an electron beam tester (Ebeam tester) and a Focused Ion Beam (FIB). Interactions between ions or electrons and the target device build charge up on its upper glassivation layer. This charge up could trigger several problems. With Ebeam testing, it sharply decreases voltage contrast during Image Fault Analysis and hide static voltage contrast. During ASIC reconfiguration with FIB, it could induce damages in the glassivation layer. Sample preparation is getting a key issue and we show how we can deal with it by optimizing carbon coating of the devices. Coating is done by an evaporator. For focused ion beam reconfiguration, we need a very thick coating. Otherwise the coating could be sputtered away due to imaging. This coating is use either to avoid charge-up on glassivated devices or as a sacrificial layer to avoid short circuits on unglassivated devices. For electron beam Testing, we need a very thin coating, we are now using an electrical characterization method with an insitu control system to obtain the right thin thickness. Carbon coating is a very cheap and useful method for sample preparation. It needs to be tuned according to the tool used.

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

Electron beam testing of VLSI circuits assisted by focused ion beam etching

1986 ◽  
Vol 4 (2) ◽  
pp. 107-120 ◽  
Author(s):  
Hideaki Arima ◽  
Takayuki Matsukawa ◽  
Junichi Mitsuhashi ◽  
Hiroaki Morimoto ◽  
Hidefumi Nakata
Keyword(s):  
Electron Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vlsi Circuits ◽  
Ion Beam Etching

scholarly journals Neutral Dissociation of Pyridine Evoked by Irradiation of Ionized Atomic and Molecular Hydrogen Beams

2021 ◽  
Vol 23 (1) ◽  
pp. 205
Author(s):  
Tomasz J. Wasowicz
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Vital Role ◽  
Experimental Science ◽  
Ion Beam Etching ◽  
Bond Forming ◽  
Line Shapes ◽  
Interstellar Media ◽  
Basic And Applied Research

The interactions of ions with molecules and the determination of their dissociation patterns are challenging endeavors of fundamental importance for theoretical and experimental science. In particular, the investigations on bond-breaking and new bond-forming processes triggered by the ionic impact may shed light on the stellar wind interaction with interstellar media, ionic beam irradiations of the living cells, ion-track nanotechnology, radiation hardness analysis of materials, and focused ion beam etching, deposition, and lithography. Due to its vital role in the natural environment, the pyridine molecule has become the subject of both basic and applied research in recent years. Therefore, dissociation of the gas phase pyridine (C5H5N) into neutral excited atomic and molecular fragments following protons (H+) and dihydrogen cations (H2+) impact has been investigated experimentally in the 5–1000 eV energy range. The collision-induced emission spectroscopy has been exploited to detect luminescence in the wavelength range from 190 to 520 nm at the different kinetic energies of both cations. High-resolution optical fragmentation spectra reveal emission bands due to the CH(A2Δ → X2Πr; B2Σ+ → X2Πr; C2Σ+ → X2Πr) and CN(B2Σ+ → X2Σ+) transitions as well as atomic H and C lines. Their spectral line shapes and qualitative band intensities are examined in detail. The analysis shows that the H2+ irradiation enhances pyridine ring fragmentation and creates various fragments more pronounced than H+ cations. The plausible collisional processes and fragmentation pathways leading to the identified products are discussed and compared with the latest results obtained in cation-induced fragmentation of pyridine.

Focused Ion Beam Grounding to Alleviate Sample Charging for Scanning Auger Electron Spectroscopy

2006 ◽  
Author(s):  
Carolyn F. H. Gondran ◽  
Emily Morales
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Contrast Analysis ◽  
Voltage Contrast

Abstract It is shown that a focused ion beam (FIB) grounding technique can be used to alleviate charge buildup on samples that would otherwise charge in the electron beam to the point where analysis by Auger electron spectroscopy (AES) was limited or impossible. FIB grounding alleviates the sample charging and permits AES analysis. The grounding technique is quick, easy and well understood as it has been used extensively for voltage-contrast analysis. The technique is shown to be useful for enabling analysis on electrically isolated conductive features as well as insulating samples.

Y-TYPE PHOTONIC CRYSTAL WAVEGUIDE WITH MINIMUM BRANCHES SPACE

2006 ◽  
Vol 05 (06) ◽  
pp. 743-746
Author(s):  
SHOUZHEN HAN ◽  
JIE TIAN ◽  
CHENG REN ◽  
XINGSHENG XU ◽  
ZHIYUAN LE ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Near Infrared ◽  
Ion Beam ◽  
Infrared Region ◽  
Photonic Crystal Waveguide ◽  
Ion Beam Etching ◽  
Optical Integrated Circuits ◽  
All Optical

The abstract should summarize the context, content and conclusions of the paper in less than 200 words. We fabricated a two-dimensional Y-branch photonic crystal waveguide in the near infrared region by using focused ion beam etching and depositing system. The light guide characters of the waveguide were measured for three different spaces between branches. Field intensity distributions of TE polarized wave in the branches were simulated by using the transfer matrix method. Both the theoretical and experimental results show that the shortest space between branches of the photonic crystal waveguide is about 1.4 times wavelength of transmitted light. If the space became shorter, the light in the two branches would couple to each other seriously. This result might be helpful for the design of compact wave demultiplexer and all-optical integrated circuits.

Focused ION Beam Etching of GaN

1998 ◽  
Vol 537 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

AbstractWe have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RME) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10-4 μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.

TECHNOLOGIES FOR THE FABRICATION OF NANOSCALE SUPERCONDUCTING CIRCUITS

2005 ◽  
Vol 19 (09n10) ◽  
pp. 405-424 ◽  
Author(s):  
MICHIO WATANABE
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Electron Beam Lithography ◽  
Josephson Junctions ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Superconducting Transition ◽  
Superconducting Circuits ◽  
Lift Off ◽  
Excellent Stability

Researches on the fabrication of ~ 0.1 × 0.1 μ m 2 superconductor–insulator–superconductor (SIS) Josephson junctions are reviewed. Today, a typical dimension is 1–10 μm for Josephson junctions in superconducting integrated circuits. These Josephson junctions are defined by well-established photolithographic technology with reactive ion etching (RIE), and for the superconductor, Nb is almost always used. The merits of Nb include the facts that the superconducting transition temperature Tc of Nb (9.2 K ) is higher than the boiling point of He (4.2 K ), and that Nb has excellent stability against thermal cycling between room temperature and liquid- He temperature. For the fabrication of ~ 0.1 × 0.1 μ m 2 junctions, on the other hand, there is a standard process with electron-beam lithography, shadow evaporation, and lift-off. This process works well for Al (Tc = 1.2 K ), however, it is not ideal for Nb . The scope of this brief review is the nanoscale junction with Nb electrodes. We will look at the efforts of optimizing the standard lift-off process for Nb , electron-beam-lithographic versions of the Nb Josephson-junction technology, focused-ion-beam (FIB) etching as a convenient alternative to electron-beam lithography and RIE, etc. In order to characterize nanoscale tunnel junctions, the single-charge transistor has been often fabricated. Therefore, a summary of its theoretical transport properties is also included.

In-Situ Electrical Monitoring and Contactless Measurement Techniques for Enhanced FIB Modifications

1998 ◽  
Author(s):  
Romain Desplats ◽  
Jamel Benbrik ◽  
Philippe Perdu ◽  
Bruno Benteo ◽  
François Marc ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Measurement Techniques ◽  
Contactless Measurement ◽  
Design Modification ◽  
Area Of Interest ◽  
Milling Operations ◽  
Voltage Contrast ◽  
Metal Layers

Abstract Recent planar technologies with 3 metal layers or more challenge current physical design modification capacities using Focused Ion Beam tools. Image visibility on the FIB is drastically reduced, making accurate positioning and milling operations in the area of interest more difficult, and the use of power planes increases the risk of short circuits while accessing inferior metal lines. Despite the complexity of FIB modifications, however, the demand for circuit modifications continues to increase. To respond to this demand for successful, time efficient, FIB modifications, step by step monitoring of operations is imperative. In this paper, we will present an innovative method which brings in-situ electrical monitoring and contactless measurement capabilities to FIB systems. Electrical connection of the circuit inside the vacuum FIB chamber is done using a commercial load module and logic waveform acquisition with the FIB is obtained without modifying FIB hardware using a voltage contrast approach. With this method, it is possible to verify the completion of FIB milling and depositing operations by temporarily suspending FIB action so that a test pattern can be run allowing electrical testing and measurements of the circuit without damaging it.

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