scholarly journals Neutral Dissociation of Pyridine Evoked by Irradiation of Ionized Atomic and Molecular Hydrogen Beams

2021 ◽  
Vol 23 (1) ◽  
pp. 205
Author(s):  
Tomasz J. Wasowicz
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Vital Role ◽  
Experimental Science ◽  
Ion Beam Etching ◽  
Bond Forming ◽  
Line Shapes ◽  
Interstellar Media ◽  
Basic And Applied Research

The interactions of ions with molecules and the determination of their dissociation patterns are challenging endeavors of fundamental importance for theoretical and experimental science. In particular, the investigations on bond-breaking and new bond-forming processes triggered by the ionic impact may shed light on the stellar wind interaction with interstellar media, ionic beam irradiations of the living cells, ion-track nanotechnology, radiation hardness analysis of materials, and focused ion beam etching, deposition, and lithography. Due to its vital role in the natural environment, the pyridine molecule has become the subject of both basic and applied research in recent years. Therefore, dissociation of the gas phase pyridine (C5H5N) into neutral excited atomic and molecular fragments following protons (H+) and dihydrogen cations (H2+) impact has been investigated experimentally in the 5–1000 eV energy range. The collision-induced emission spectroscopy has been exploited to detect luminescence in the wavelength range from 190 to 520 nm at the different kinetic energies of both cations. High-resolution optical fragmentation spectra reveal emission bands due to the CH(A2Δ → X2Πr; B2Σ+ → X2Πr; C2Σ+ → X2Πr) and CN(B2Σ+ → X2Σ+) transitions as well as atomic H and C lines. Their spectral line shapes and qualitative band intensities are examined in detail. The analysis shows that the H2+ irradiation enhances pyridine ring fragmentation and creates various fragments more pronounced than H+ cations. The plausible collisional processes and fragmentation pathways leading to the identified products are discussed and compared with the latest results obtained in cation-induced fragmentation of pyridine.

Electron beam testing of multilevel metal integrated circuits

1991 ◽  
Vol 49 ◽  
pp. 830-831
Author(s):  
P. E. Russell ◽  
Z. J. Radzimski ◽  
D. A. Ricks ◽  
J. P. Vitarelli
Keyword(s):  
Electron Beam ◽  
Integrated Circuits ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Measurement Techniques ◽  
Ion Beam Etching ◽  
Voltage Contrast ◽  
Modelling Effort ◽  
Established Technique

Fundamentally, voltage contrast is a well established technique for determination of voltages on metal surface which can be directly probed with an electron beam. However, actual integrated circuits (IC) consist of two or more conducting layers (metal and doped polysilicon) separated by dielectrics and covered by a dielectric passivation layer. Our work has addressed: i) the removal of dielectric layers (depassivation) by reactive ion etching (RIE) or selectively by focused ion beam etching to allow access to exposed metal lines; ii) modelling effort to understand how the materials and geometric parameters of multilevel IC's affect voltage contrast measurements, and iii) improvements in retarding field spectrometer based measurement techniques.

Novel Approach of Improving Secondary Electron Detector in FIB System

2018 ◽  
Author(s):  
Steve Wang ◽  
Jim McGinn ◽  
Peter Tvarozek ◽  
Amir Weiss
Keyword(s):  
Integrated Circuit ◽  
Secondary Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vital Role ◽  
Electron Detector ◽  
System A ◽  
Novel Approach

Abstract Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.

Automatic Determination of Optimal FIB Operations for Improved Circuit Probing and Fast Reconfiguration

2000 ◽  
Author(s):  
Romain Desplats ◽  
Timothee Dargnies ◽  
Jean-Christophe Courrege ◽  
Philippe Perdu ◽  
Jean-Louis Noullet
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Devices ◽  
Front Side ◽  
Automatic Determination ◽  
Metal Line ◽  
New Approach ◽  
Metal Layers

Abstract Focused Ion Beam (FIB) tools are widely used for Integrated Circuit (IC) debug and repair. With the increasing density of recent semiconductor devices, FIB operations are increasingly challenged, requiring access through 4 or more metal layers to reach a metal line of interest. In some cases, accessibility from the front side, through these metal layers, is so limited that backside FIB operations appear to be the most appropriate approach. The questions to be resolved before starting frontside or backside FIB operations on a device are: 1. Is it do-able, are the metal lines accessible? 2. What is the optimal positioning (e.g. accessing a metal 2 line is much faster and easier than digging down to a metal 6 line)? (for the backside) 3. What risk, time and cost are involved in FIB operations? In this paper, we will present a new approach, which allows the FIB user or designer to calculate the optimal FIB operation for debug and IC repair. It automatically selects the fastest and easiest milling and deposition FIB operations.

Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

2011 ◽  
Vol 7 (4) ◽  
pp. 594-597
Author(s):  
Zhan-Shuo Hu ◽  
Fei-Yi Hung ◽  
Shoou-Jinn Chang ◽  
Bohr-Ran Huang ◽  
Bo-Cheng Lin ◽  
...  
Keyword(s):  
Field Emission ◽  
Growth Mechanism ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Emission Characteristics ◽  
Ion Beam Etching

scholarly journals Focused Ion Beam Etching of GaN

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Etching Rate ◽  
Side Wall ◽  
Device Fabrication ◽  
Direct Write ◽  
Ion Beam Etching ◽  
Etched Surface ◽  
A Current ◽  
Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

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