Electron microscope studies of climb of dissociated dislocations
The mechanism of climb of dissociated dislocations in f.c.c. metals and alloys is not well understood. Climb of dislocations by absorption or emission of vacancies at existing jogs in dissociated dislocations has been observed using the “weak-beam” technique of electron microscopy, but the mechanism of nucleation of jogs is not clear. In this paper we report some results of experiments designed to study the nucleation problem, and more generally the mechanism of absorption of point defects under conditions of high supersaturation.Thin (111) sections of deformed single crystals of Cu-Al alloys, of various compositions, have been electron irradiated in an AEI EM7 HVEM up to 1 MeV, either at room temperature, or elevated temperatures up to 200°C, using a goniometer heating stage. Observations under weak beam conditions have been made a) in situ in the HVEM b) at 100kV in an JEM100B, following irradiation in the HVEM. Interstitials produced by the irradiation are expected to be preferentially attracted to the dislocations because of the strong dislocation-interstitial interaction.