scholarly journals Novel Hybrid Sample Preparation Method for In Situ Liquid Cell TEM Analysis

2014 ◽  
Vol 20 (S3) ◽  
pp. 1514-1515 ◽  
Author(s):  
Xiangli Zhong ◽  
M. G. Burke ◽  
S. Schilling ◽  
S.J. Haigh ◽  
M. A. ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Preparation Method ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Hybrid Sample ◽  
Liquid Cell

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

In situ TEM study of stability of TaRhx diffusion barriers using a novel sample preparation method

Micron ◽  
2014 ◽  
Vol 58 ◽  
pp. 25-31 ◽  
Author(s):  
Neda Dalili ◽  
Peng Li ◽  
Martin Kupsta ◽  
Qi Liu ◽  
Douglas G. Ivey
Keyword(s):  
Sample Preparation ◽  
Preparation Method ◽  
Diffusion Barriers ◽  
In Situ Tem ◽  
Sample Preparation Method

scholarly journals A Novel Sample Preparation Method for Frontside Inspection of GaN Devices after Backside Analysis

2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye
Keyword(s):  
Electron Microscopy ◽  
Sample Preparation ◽  
Preparation Method ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Die Surface ◽  
Emission Microscopy ◽  
Focus Ion Beam

Abstract Frontside die inspection by Scanning Electron Microscopy (SEM) is critical to investigate failures that appear dispersed over the GaN die surface and that will be very difficult to localize by the typical Focus Ion Beam (FIB) or Transmission Electron Microscopy (TEM) analysis. Frontside sample preparation is; however, extremely challenging if the device was already subjected to sample preparation for backside Photo Emission Microscopy (PEM). In this paper, a novel sample preparation method is presented where all front side layers are removed and only the 5μm GaN die is left for inspection.

scholarly journals Double shadow masking sample preparation method for in‐situ TEM characterization

Nano Select ◽  
2020 ◽  
Vol 1 (4) ◽  
pp. 413-418
Author(s):  
Carmel Mary Esther Alphonse ◽  
Mohan Muralikrishna Garlapati ◽  
Sven Hilke ◽  
Gerhard Wilde
Keyword(s):  
Sample Preparation ◽  
Preparation Method ◽  
In Situ Tem ◽  
Sample Preparation Method ◽  
Tem Characterization

Surface Defect Analysis by Using a Novel Backside XTEM Sample Preparation Method

2006 ◽  
Author(s):  
Jian-Shing Luo ◽  
Lang-Yu Huang ◽  
Wen-Lon Gu ◽  
Jeremy D. Russell
Keyword(s):  
Sample Preparation ◽  
Specific Surface ◽  
Surface Defect ◽  
Surface Defects ◽  
Preparation Method ◽  
Defect Analysis ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Site Specific ◽  
Electron Spectrometry

Abstract This paper demonstrates a novel method of XTEM sample preparation for site-specific surface defect analysis using backside polishing. Analysis of three different types of site-specific surface defects was demonstrated using a novel backside XTEM sample preparation method. The details of the backside XTEM sample preparation method and some examples are reported in this paper. Comparing to Auger electron spectrometry (AES) results on similar defects, more detailed and precise information is observed using TEM analysis with this method. It is therefore a complementary technique to traditional AES analysis on surface defects for contamination with atomic level concentration. From the results, the sample preparation method can produce a clean, pristine surface that is well characterized and could be reproduced, successfully.

Cross-Sectional Tem Sample Preparation Method Using Fib Etching for Thin-Film Transistor

1997 ◽  
Vol 480 ◽  
Author(s):  
K. Tsujimoto ◽  
S. Tsuji ◽  
H. Takatsuji ◽  
K. Kuroda ◽  
H. Saka ◽  
...  
Keyword(s):  
Thin Film ◽  
Sample Preparation ◽  
Preparation Method ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Incident Beam ◽  
Thin Wall ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Cross Sectional

AbstractA rapid and precise sample preparation method using focused ion beam (FIB) etching was developed for cross-sectional transmission electron microscopy (X-TEM) analysis of a thin-film transistor (TFT) fabricated on a glass substrate. Gallium (Ga) ions accelerated at 30 kV and at various incident beam angles were applied during FIB etching to create a uniform thin wall. We successfully prepared X-TEM specimens of long and fragile aluminum (Al) whiskers formed on thin Al films in TFT metallization, where a strong charge is built up during FIB etching. The effect of ion-beam-assisted tungsten deposition prior to FIB etching is discussed. A whisker having a length not exceeding approximately 10 #x00B5;m can be successfully etched to a thickness of 200 nm while keeping its original shape. The performance of this technique is demonstrated in applications to etching at other fragile locations related to TFTs.

In-Situ TEM Electrical Characterization of Void Formation and Growth Along Cu Interconnect Via: FIB Based Sample Preparation Method

2020 ◽  
Author(s):  
Hagit Barda ◽  
Irina Geppert ◽  
Avraham Raz ◽  
Rémy Berthier
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Void Formation ◽  
Electrical Characterization ◽  
In Situ Tem ◽  
Sample Preparation Method ◽  
Transition Electron Microscopy

Abstract An experimental setup is presented, that allows in-situ Transition Electron Microscopy (TEM) investigation of void formation and growth within fully embedded interconnect structure, as a response to an external bias. A special TEM holder is employed to perform in-situ I-V measurements across the Via, simultaneously monitoring the morphological and chemical changes surrounding the void. This work presents in detail a Focused Ion Beam (FIB) based sample preparation method that allows the analysis of a Cu single Via structure found in the advanced microelectronic 14nm FinFET technology, as well as preliminary TEM observations.

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