Surface Defect Analysis by Using a Novel Backside XTEM Sample Preparation Method

2006 ◽  
Author(s):  
Jian-Shing Luo ◽  
Lang-Yu Huang ◽  
Wen-Lon Gu ◽  
Jeremy D. Russell
Keyword(s):  
Sample Preparation ◽  
Specific Surface ◽  
Surface Defect ◽  
Surface Defects ◽  
Preparation Method ◽  
Defect Analysis ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Site Specific ◽  
Electron Spectrometry

Abstract This paper demonstrates a novel method of XTEM sample preparation for site-specific surface defect analysis using backside polishing. Analysis of three different types of site-specific surface defects was demonstrated using a novel backside XTEM sample preparation method. The details of the backside XTEM sample preparation method and some examples are reported in this paper. Comparing to Auger electron spectrometry (AES) results on similar defects, more detailed and precise information is observed using TEM analysis with this method. It is therefore a complementary technique to traditional AES analysis on surface defects for contamination with atomic level concentration. From the results, the sample preparation method can produce a clean, pristine surface that is well characterized and could be reproduced, successfully.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

Alternative FIB TEM Sample Preparation Method for Cross-Sections of Thin Metal Films Deposited on Polymer Substrates

2013 ◽  
Vol 19 (4) ◽  
pp. 1080-1091 ◽  
Author(s):  
Felipe Rivera ◽  
Robert Davis ◽  
Richard Vanfleet
Keyword(s):  
Sample Preparation ◽  
Cross Sections ◽  
Elemental Analysis ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Polymer Substrates ◽  
Interface Layers

AbstractTransmission electron microscopy (TEM) and focused ion beam (FIB) are proven tools to produce site-specific samples in which to study devices from initial processing to causes for failure, as well as investigating the quality, defects, interface layers, etc. However, the use of polymer substrates presents new challenges, in the preparation of suitable site-specific TEM samples, which include sample warping, heating, charging, and melting. In addition to current options that address some of these problems such as cryo FIB, we add an alternative method and FIB sample geometry that address these challenges and produce viable samples suitable for TEM elemental analysis. The key feature to this approach is a larger than usual lift-out block into which small viewing windows are thinned. Significant largely unthinned regions of the block are left between and at the base of the thinned windows. These large unthinned regions supply structural support and thermal reservoirs during the thinning process. As proof-of-concept of this sample preparation method, we also present TEM elemental analysis of various thin metallic films deposited on patterned polycarbonate, lacquer, and poly-di-methyl-siloxane substrates where the pattern (from low- to high-aspect ratio) is preserved.

scholarly journals A Novel Sample Preparation Method for Frontside Inspection of GaN Devices after Backside Analysis

2021 ◽  
Author(s):  
Tony Colpaert ◽  
Stefaan Verleye
Keyword(s):  
Electron Microscopy ◽  
Sample Preparation ◽  
Preparation Method ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Die Surface ◽  
Emission Microscopy ◽  
Focus Ion Beam

Abstract Frontside die inspection by Scanning Electron Microscopy (SEM) is critical to investigate failures that appear dispersed over the GaN die surface and that will be very difficult to localize by the typical Focus Ion Beam (FIB) or Transmission Electron Microscopy (TEM) analysis. Frontside sample preparation is; however, extremely challenging if the device was already subjected to sample preparation for backside Photo Emission Microscopy (PEM). In this paper, a novel sample preparation method is presented where all front side layers are removed and only the 5μm GaN die is left for inspection.

Cross-Sectional Tem Sample Preparation Method Using Fib Etching for Thin-Film Transistor

1997 ◽  
Vol 480 ◽  
Author(s):  
K. Tsujimoto ◽  
S. Tsuji ◽  
H. Takatsuji ◽  
K. Kuroda ◽  
H. Saka ◽  
...  
Keyword(s):  
Thin Film ◽  
Sample Preparation ◽  
Preparation Method ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Incident Beam ◽  
Thin Wall ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Cross Sectional

AbstractA rapid and precise sample preparation method using focused ion beam (FIB) etching was developed for cross-sectional transmission electron microscopy (X-TEM) analysis of a thin-film transistor (TFT) fabricated on a glass substrate. Gallium (Ga) ions accelerated at 30 kV and at various incident beam angles were applied during FIB etching to create a uniform thin wall. We successfully prepared X-TEM specimens of long and fragile aluminum (Al) whiskers formed on thin Al films in TFT metallization, where a strong charge is built up during FIB etching. The effect of ion-beam-assisted tungsten deposition prior to FIB etching is discussed. A whisker having a length not exceeding approximately 10 #x00B5;m can be successfully etched to a thickness of 200 nm while keeping its original shape. The performance of this technique is demonstrated in applications to etching at other fragile locations related to TFTs.

Site-Specific Sample Preparation Method for Atom Probe Tomography on Semiconductor Devices

2020 ◽  
Author(s):  
Roger L. Alvis ◽  
Zdenek Kral ◽  
Trevan Landin ◽  
Jonathan Orsborn ◽  
Ty J. Prosa ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Atom Probe Tomography ◽  
Semiconductor Device ◽  
Preparation Method ◽  
Atom Probe ◽  
Sample Preparation Method ◽  
Advanced Technique ◽  
Site Specific ◽  
Optimal Geometry ◽  
Lightly Doped Drain

Abstract An advanced technique for site-specific Atom Probe Tomography (APT) is presented. An APT sample is prepared from a targeted semiconductor device (commercially available product based on 14nm finFET technology). Using orthogonal views of the sample in STEM while FIB milling, a viable APT sample is created with the tip of the sample positioned over the lightly-doped drain (LDD) region of a pre-defined PFET. The resulting APT sample has optimal geometry and minimal amorphization damage.

scholarly journals Novel Hybrid Sample Preparation Method for In Situ Liquid Cell TEM Analysis

2014 ◽  
Vol 20 (S3) ◽  
pp. 1514-1515 ◽  
Author(s):  
Xiangli Zhong ◽  
M. G. Burke ◽  
S. Schilling ◽  
S.J. Haigh ◽  
M. A. ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Preparation Method ◽  
Sample Preparation Method ◽  
Tem Analysis ◽  
Hybrid Sample ◽  
Liquid Cell

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

Cross-Section Sample Preparation Method for Imaging Dopant Related Anomalies Using Scanning Probe Microscopy Techniques

2014 ◽  
Author(s):  
Swaminathan Subramanian ◽  
Khiem Ly ◽  
Tony Chrastecky
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Scanning Probe Microscopy ◽  
Preparation Method ◽  
Fault Isolation ◽  
Scanning Probe ◽  
Sample Preparation Method ◽  
Probe Microscopy ◽  
Section Sample

Abstract Visualization of dopant related anomalies in integrated circuits is extremely challenging. Cleaving of the die may not be possible in practical failure analysis situations that require extensive electrical fault isolation, where the failing die can be submitted of scanning probe microscopy analysis in various states such as partially depackaged die, backside thinned die, and so on. In advanced technologies, the circuit orientation in the wafer may not align with preferred crystallographic direction for cleaving the silicon or other substrates. In order to overcome these issues, a focused ion beam lift-out based approach for site-specific cross-section sample preparation is developed in this work. A directional mechanical polishing procedure to produce smooth damage-free surface for junction profiling is also implemented. Two failure analysis applications of the sample preparation method to visualize junction anomalies using scanning microwave microscopy are also discussed.

scholarly journals Application of the Dehydration Homogeneous Liquid–Liquid Extraction (DHLLE) Sample Preparation Method for Fingerprinting of Honey Volatiles

Molecules ◽  
2021 ◽  
Vol 26 (8) ◽  
pp. 2277
Author(s):  
Piotr M. Kuś ◽  
Igor Jerković
Keyword(s):  
Carboxylic Acid ◽  
Sample Preparation ◽  
Preparation Method ◽  
Liquid Extraction ◽  
Sample Preparation Method ◽  
Phenyllactic Acid ◽  
Homogeneous Liquid ◽  
Liquid Liquid Extraction ◽  
Wide Range ◽  
Chemical Groups

Recently, we proposed a new sample preparation method involving reduced solvent and sample usage, based on dehydration homogeneous liquid–liquid extraction (DHLLE) for the screening of volatiles and semi-volatiles from honey. In the present research, the method was applied to a wide range of honeys (21 different representative unifloral samples) to determine its suitability for detecting characteristic honey compounds from different chemical classes. GC-FID/MS disclosed 130 compounds from different structural and chemical groups. The DHLLE method allowed the extraction and identification of a wide range of previously reported specific and nonspecific marker compounds belonging to different chemical groups (including monoterpenes, norisoprenoids, benzene derivatives, or nitrogen compounds). For example, DHLLE allowed the detection of cornflower honey chemical markers: 3-oxo-retro-α-ionols, 3,4-dihydro-3-oxoedulan, phenyllactic acid; coffee honey markers: theobromine and caffeine; linden honey markers: 4-isopropenylcyclohexa-1,3-diene-1-carboxylic acid and 4-(2-hydroxy-2-propanyl)cyclohexa-1,3-diene-1-carboxylic acid, as well as furan derivatives from buckwheat honey. The obtained results were comparable with the previously reported data on markers of various honey varieties. Considering the application of much lower volumes of very common reagents, DHLLE may provide economical and ecological advantages as an alternative sample preparation method for routine purposes.

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