scholarly journals Spectrally Wide-Range-Tunable, Efficient, and Bright Colloidal Light-Emitting Diodes of Quasi-2D Nanoplatelets Enabled by Engineered Alloyed Heterostructures

2020 ◽  
Vol 32 (18) ◽  
pp. 7874-7883 ◽  
Author(s):  
Yemliha Altintas ◽  
Baiquan Liu ◽  
Pedro Ludwig Hernández-Martínez ◽  
Negar Gheshlaghi ◽  
Farzan Shabani ◽  
...  
2020 ◽  
Vol 1014 ◽  
pp. 126-130
Author(s):  
Wan Sheng Zuo ◽  
Yin Xi Niu ◽  
Liu Yang ◽  
Xiu Zhen Chi ◽  
Jin Jin Liu ◽  
...  

In this study, the advantages of the AlN electron blocking layer (EBL) for InGaN/GaN blue light-emitting diodes (LEDs) were investigated. The LEDs with the AlN EBL exhibited better optical performance over a wide range of carrier concentration due to the suppression of electron overflow. Furthermore, the AlN EBL with a thicker last barrier layer was investigated. The thicker last barrier layer was used to enhance Electrostatic Discharge (ESD) characteristic by the better current spreading effect.


1998 ◽  
Vol 537 ◽  
Author(s):  
A.E. Yunovich ◽  
V.E. Kudryashov ◽  
A..N. Turkin ◽  
A.N. Kovalev ◽  
F.I. Manyakhin

AbstractElectroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.)


Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2761
Author(s):  
Zhihong Sun ◽  
Aaqib Khurshid ◽  
Muhammad Sohail ◽  
Weidong Qiu ◽  
Derong Cao ◽  
...  

The development of white light emitting diodes (WLEDs) holds great promise for replacing traditional lighting devices due to high efficiency, low energy consumption and long lifetime. Metal–organic frameworks (MOFs) with a wide range of luminescent behaviors are ideal candidates to produce white light emission in the phosphor-converted WLEDs. Encapsulation of emissive organic dyes is a simple way to obtain luminescent MOFs. In this review, we summarize the recent progress on the design and constructions of dye encapsulated luminescent MOFs phosphors. Different strategies are highlighted where white light emitting phosphors were obtained by combining fluorescent dyes with metal ions and linkers.


2001 ◽  
Vol 708 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Alexander Shik

ABSTRACTA low level of electron injection is one of the major obstacles to achieving high-efficiency organic light-emitting diodes. With the goal of improving injection characteristics, we fabricated and investigated herein multi-layer contacts which included a tunnel-transparent dielectric layer of nanometer thickness. Polymer layers were prepared by the spin-coating method and dielectric and metallic contact layers grown by vacuum deposition. The voltage drop at this layer shifts the metal Fermi level relative to the polymer molecular orbitals responsible for the carrier transport, increasing the injection efficiency. The introduction of a suitably chosen dielectric layer results in an increase in the injection efficiency by up to a factor of several tens.Further sophistication of the injecting contacts consists in creating and additional intermediate thin metallic layer playing the role of the third, base electrode, similar to hot-electron transistors with metallic base. Additional bias applied to the base electrode permits variable injection efficiency and quantum yield over a wide range.


2015 ◽  
Vol 21 (4) ◽  
pp. 23-29 ◽  
Author(s):  
Kuo-Ju Chen ◽  
Chien-Chung Lin ◽  
Hau-Vei Han ◽  
Chia-Yu Lee ◽  
Shih-Hsuan Chien ◽  
...  

2008 ◽  
Vol 14 (3) ◽  
pp. 243-250 ◽  
Author(s):  
Richard W. Cole ◽  
James N. Turner

AbstractLight-emitting diodes (LEDs) can be easily and inexpensively integrated into modern light microscopes. There are numerous advantages of LEDs as illumination sources; most notably, they provide brightness and spectral control. We demonstrate that for transmitted light imaging, an LED can replace the traditional tungsten filament bulb while offering longer life; no color temperature change with intensity change; reduced emission in the infrared region, which is important for live cell imaging; and reduced cost of ownership. We show a direct substitution of the typical tungsten bulb with a commercially available LED and demonstrated the color stability by imaging a histology section over a wide range of light intensities. For fluorescent imaging, where the typical illumination sources are mercury or xenon lamps, we demonstrate that LEDs offer advantages of providing a longer lifespan, having a more constant intensity output over time, more homogeneous illumination, and significantly lower photon dose. Our LED equipped system was used to image and deconvolve dual fluorescently labeled cells, as well as image cells undergoing mitosis expressing green fluorescent protein–histone 2B complex. The timing of the stages of mitosis is well established as an indicator of cell viability.


2004 ◽  
Vol 831 ◽  
Author(s):  
X. A. Cao ◽  
J. M. Teetsov ◽  
S. F. LeBoeuf ◽  
S. D. Arthur ◽  
J. Kretchmer

ABSTRACTInGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission at ∼405 nm were grown on bulk GaN and sapphire substrates using MOCVD. Tunneling current was found to be dominant in the LED on sapphire over a wide range of applied bias, but was substantially suppressed in the homoepitaxial LED. Nanoscale electrical characterization using conductive atomic force microscopy (C-AFM) revealed highly localized leakage current at V-defects in the LED structure on sapphire, indicating that the associated threading dislocations were electrically active and behaved as leakage current pathways connected across the p-n junction. Compared to the lateral LED on sapphire, the vertically-structured LED on GaN had a reduced series resistance of 7 Ω and greatly improved power conversion efficiencies. The homoepitaxial LED was subjected to stress test at 400 mA for 24 h and showed minimal optical degradation, whereas the same stress resulted in the destruction of the LED on sapphire due to increased current crowding and self-heating.


2009 ◽  
Vol 1197 ◽  
Author(s):  
Madhusudan Singh ◽  
Hyun Sik Chae ◽  
Jesse D. Froehlich ◽  
Takashi Kondou ◽  
Sheng Li ◽  
...  

AbstractWe present results of printing solution-processable organic light emitting diodes (OLEDs) based on electrophosphorescent Ir(III) stellate polyhedral oligomeric silsesquioxane (POSS) macromolecules. The macromolecules are doped into a polymer-based ink containing a hole transporting polymer, poly(9-vinylcarbazole) (PVK) and an electron transporting material, 2-4-biphenylyl-5-4-tertbutyl-phenyl-1,3,4-oxadiazole (PBD), and the resulting ink is printed on a layer of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) spin-coated on indium tin oxide (ITO). An exciton-blocking layer consisting of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) is thermally evaporated onto the printed ink layers, followed by a LiF/Al cathode. While the photoluminescence (PL) spectrum of printed ink on glass indicates a significant contribution from the PVK:PBD exciplex, electroluminescence measurements (EL) suggest a much smaller effect of these states, which implies significant charge trapping at dopant molecular sites. Our latest experiments with devices printed on PEDOT:PSS/ITO/glass indicate that the devices exhibit high luminances (∼ 13,000 cd/m2 at 70 mA/cm2) and a fairly consistent quantum efficiency (∼ 2.5%) across a wide range of luminances. The corresponding figures for spin-coated devices are expectedly higher, with efficiencies ∼ 4.5% at similar levels of brightness. We use white light interferometry as a non-contact technique to quantify surface roughness and thickness of printed layers. Our current results thus indicate that inkjet printing of macromolecular phosphor doped polymer inks is suitable for fabrication of OLEDs with high brightness, in spite of the low glass transition temperature of some of the species. Our initial work with these devices on flexible ITO-coated plastic substrates shows devices with moderately high luminance values (∼ 2,500 cd/m2 at 35 mA/cm2). Our more recent devices show higher brightnesses (∼ 9, 600 cd/m2). We are working on the development of inkjet printing materials and processes for pure macromolecular OLEDs that are not performance and reliability limited by the presence of the PVK:PBD matrix with low glass transition temperatures. This requires the development of macromolecules that subsume all the functions of the host matrix and have high enough Tg to be usable in high concentrations needed. In conjunction with the inkjet printing technology demonstrated in this work, this has the potential to yield low-cost manufacturing of these devices.


1999 ◽  
Vol 4 (S1) ◽  
pp. 659-664
Author(s):  
A.E. Yunovich ◽  
V.E. Kudryashov ◽  
A.N. Turkin ◽  
A.N. Kovalev ◽  
F.I. Manyakhin

Electroluminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with single and multiple quantum wells (QWs) are analyzed by models of radiative recombination in 2D-structures with band tails. Equations of the model fit spectra quite good in a wide range of currents. Parameters of the fit are discussed and compared for single and multiple QWs. Tunnel effects play a sufficient role in blue LEDs with single QWs at low currents; they can be neglected in LEDs with multiple QWs. A new spectral band was detected at the high energy side of the spectra of green LEDs with multiple QWs; it is attributed with large scale inhomogenities of In distribution in InGaN QWs.*)


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