scholarly journals Large-Area, Ensemble Molecular Electronics: Motivation and Challenges

2017 ◽  
Vol 117 (5) ◽  
pp. 4248-4286 ◽  
Author(s):  
Ayelet Vilan ◽  
Dinesh Aswal ◽  
David Cahen
2020 ◽  
Vol 10 (17) ◽  
pp. 6064
Author(s):  
Lucía Herrer ◽  
Santiago Martín ◽  
Pilar Cea

The societal impact of the electronics industry is enormous—not to mention how this industry impinges on the global economy. The foreseen limits of the current technology—technical, economic, and sustainability issues—open the door to the search for successor technologies. In this context, molecular electronics has emerged as a promising candidate that, at least in the short-term, will not likely replace our silicon-based electronics, but improve its performance through a nascent hybrid technology. Such technology will take advantage of both the small dimensions of the molecules and new functionalities resulting from the quantum effects that govern the properties at the molecular scale. An optimization of interface engineering and integration of molecules to form densely integrated individually addressable arrays of molecules are two crucial aspects in the molecular electronics field. These challenges should be met to establish the bridge between organic functional materials and hard electronics required for the incorporation of such hybrid technology in the market. In this review, the most advanced methods for fabricating large-area molecular electronic devices are presented, highlighting their advantages and limitations. Special emphasis is focused on bottom-up methodologies for the fabrication of well-ordered and tightly-packed monolayers onto the bottom electrode, followed by a description of the top-contact deposition methods so far used.


Nanoscale ◽  
2021 ◽  
Author(s):  
Elena Gorenskaia ◽  
Kelly Lauren Turner ◽  
Santiago Martín Solans ◽  
Pilar Cea ◽  
Paul Low

Molecular junctions have proven invaluable tools through which to explore the electronic properties of molecules and molecular monolayers. In seeking to develop a viable molecular electronics based technology it becomes...


2008 ◽  
Vol 1091 ◽  
Author(s):  
Hylke B. Akkerman ◽  
Auke J. Kronemeijer ◽  
Paul W. M. Blom ◽  
Paul van Hal ◽  
Dago M. de Leeuw ◽  
...  

AbstractA technology is demonstrated to fabricate reliable metal-molecule-metal junctions with unprecedented device diameters up to 100 μm. The yield of these molecular junctions is close to unity. Preliminary stability investigations have shown a shelf life of years and no deterioration upon cycling. Key ingredients are the use of a conducting polymer layer (PEDOT:PSS) sandwiched between a bottom electrode with a self-assembled monolayer (SAM) and the top electrode to prevent electrical shorts, and processing in lithographically defined vertical interconnects (vias) to prevent both parasitic currents and interaction between the environment and the SAM [1].Modeling the current–voltage (I–V) characteristics of alkanedithiols with the Simmons model showed that the low dielectric constant of the molecules in the junction results in a strong image potential that should be included in the tunneling model. Including image force effects, the tunneling model consistently describes the current-voltage characteristics of the molecular junctions up to 1 V bias for different molecule lengths [2].Furthermore, we demonstrate a dependence of the I–V characteristics on the monolayer quality. A too low concentration of long alkanedithiols leads to the formation of looped molecules, resulting in a 50-fold increase of the current through the SAM. To obtain an almost full standing-up phase of 1,14-tetradecanedithiol (C14) a 30 mM concentration is required, whereas a 0.3 mM concentration leads to a highly looped monolayer. The conduction through the full standing-up phase of C14 and C16 is in accordance with the exponential dependence on molecular length as obtained from shorter alkanedithiols [3].Finally, a fully functional solid-state molecular electronic switch is manufactured by conventional processing techniques. The molecular switch is based on a monolayer of photochromic diarylethene molecular switches. The monolayer reversibly switches the conductance by more than one order of magnitude between the two conductance states via optical addressing. This reversible conductance switch operates as an electronic ON/OFF switch (or a reprogrammable data storage unit) that can be optically written and electronically read [4].


2006 ◽  
Vol 18 (12) ◽  
pp. 1499-1504 ◽  
Author(s):  
K. T. Shimizu ◽  
J. D. Fabbri ◽  
J. J. Jelincic ◽  
N. A. Melosh

Nature ◽  
2006 ◽  
Vol 441 (7089) ◽  
pp. 69-72 ◽  
Author(s):  
Hylke B. Akkerman ◽  
Paul W. M. Blom ◽  
Dago M. de Leeuw ◽  
Bert de Boer

2012 ◽  
Vol 13 (11) ◽  
pp. 2502-2507 ◽  
Author(s):  
Kamal Asadi ◽  
Ilias Katsouras ◽  
Jan Harkema ◽  
Fatemeh Gholamrezaie ◽  
Edsger C.P. Smits ◽  
...  

Author(s):  
G. Lehmpfuhl

Introduction In electron microscopic investigations of crystalline specimens the direct observation of the electron diffraction pattern gives additional information about the specimen. The quality of this information depends on the quality of the crystals or the crystal area contributing to the diffraction pattern. By selected area diffraction in a conventional electron microscope, specimen areas as small as 1 µ in diameter can be investigated. It is well known that crystal areas of that size which must be thin enough (in the order of 1000 Å) for electron microscopic investigations are normally somewhat distorted by bending, or they are not homogeneous. Furthermore, the crystal surface is not well defined over such a large area. These are facts which cause reduction of information in the diffraction pattern. The intensity of a diffraction spot, for example, depends on the crystal thickness. If the thickness is not uniform over the investigated area, one observes an averaged intensity, so that the intensity distribution in the diffraction pattern cannot be used for an analysis unless additional information is available.


Author(s):  
C. B. Carter ◽  
J. Rose ◽  
D. G. Ast

The hot-pressing technique which has been successfully used to manufacture twist boundaries in silicon has now been used to form tilt boundaries in this material. In the present study, weak-beam imaging, lattice-fringe imaging and electron diffraction techniques have been combined to identify different features of the interface structure. The weak-beam technique gives an overall picture of the geometry of the boundary and in particular allows steps in the plane of the boundary which are normal to the dislocation lines to be identified. It also allows pockets of amorphous SiO2 remaining in the interface to be recognized. The lattice-fringe imaging technique allows the boundary plane parallel to the dislocation to be identified. Finally the electron diffraction technique allows the periodic structure of the boundary to be evaluated over a large area - this is particularly valuable when the dislocations are closely spaced - and can also provide information on the structural width of the interface.


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