Exploration of Graphene Defect Reactivity toward a Hydrogen Radical Utilizing a Preactivated Circumcoronene Model

2021 ◽  
Vol 125 (5) ◽  
pp. 1152-1165
Author(s):  
Reed Nieman ◽  
Adelia J. A. Aquino ◽  
Hans Lischka
Keyword(s):  
Hydrogen Radical

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 999-1002
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
High Reliability ◽  
Hydrogen Atmosphere ◽  
Exposed Sample ◽  
New Apparatus ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Sic Wafer

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

Formation of a Hydrogen Radical in Hydrogen Nanobubble Water and Its Effect on Copper Toxicity in Chlorella

2021 ◽  
Author(s):  
Shu Liu ◽  
Jiayao Li ◽  
Seiichi Oshita ◽  
Mohammed Kamruzzaman ◽  
Minming Cui ◽  
...  
Keyword(s):  
Copper Toxicity ◽  
Hydrogen Radical

Mercury-Sensitized Hydrogen Radical Photoetching of Hydrogenated Amorphous Silicon

1996 ◽  
Vol 35 (Part 2, No. 12A) ◽  
pp. L1547-L1549
Author(s):  
Masato Hiramatsu ◽  
Yoshito Kawakyu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogen Radical ◽  
Hydrogenated Amorphous

Compositional Modulation and its Optoelectric Properties of Zn(S,Se,Te) Crystals Grown by Hydrogen Radical-Enhanced CVD

1995 ◽  
Vol 417 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshihiro Ii ◽  
Isamu Shimizu
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Small Shift ◽  
X Ray ◽  
Compositional Modulation ◽  
Peak Energy ◽  
Large Lattice ◽  
The Difference ◽  
Hydrogen Radical

AbstractHigh-quality (ZnS)n(ZnSe)12n and (ZnSe)n(ZnTe)11n (n=1∼4) crystals were grown at a low temperature of 200°C by hydrogen radical-enhanced chemical vapor deposition. From satellite peaks in x-ray diffraction spectra, these periodic structure crystals were confirmed to be grown coherently on substrates, in spite of large lattice mismatches between the grown layers and the substrates (͛=4∼7%). In photoluminescence (PL) spectra of these films, strong band-edge emissions were predominantly observed, resulting from a suppression of deep-level emissions. We found that the PL peak energy of (ZnSe)n(ZnTe)11n shifts systematically to lower energy by 200 meV with changes in the number of ZnSe layers (n), while relatively small shift of 13 meV was observed in (ZnS)n(ZnSe)12n. These discrepancy can be attributed to the difference of band-lineups or chemical natures of constituent atoms in these crystals.

scholarly journals Improvement of UV Luminescence Properties of Gallium Nitride Powder by Hydrogen Radical Irradiation

2008 ◽  
Vol 55 (3) ◽  
pp. 211-215
Author(s):  
Norio Kobayashi ◽  
Rubin Ye ◽  
Takayuki Watanabe ◽  
Takamasa Ishigaki
Keyword(s):  
Gallium Nitride ◽  
Luminescence Properties ◽  
Nitride Powder ◽  
Uv Luminescence ◽  
Hydrogen Radical

Fluxless Flip-Chip Bonding Process Using Hydrogen Radical

2008 ◽  
Author(s):  
Taizo Hagihara ◽  
Tatsuya Takeuchi ◽  
Yasuhide Ohno
Keyword(s):  
Flip Chip ◽  
Bonding Process ◽  
Flip Chip Bonding ◽  
Hydrogen Radical

Si Whisker Growth by Hydrogen Radical using Hot Filament CVD Reactor

2007 ◽  
Vol 1018 ◽  
Author(s):  
Hiroshi Nagayoshi ◽  
Suzuka Nishimura ◽  
Kazutaka Terashima ◽  
Nobuo Matsumoto ◽  
Alexander G. Ulyashin
Keyword(s):  
Residence Time ◽  
Silicon Substrate ◽  
Silicon Surface ◽  
Whisker Growth ◽  
Silicon Hydride ◽  
Particle Layer ◽  
Hot Filament Cvd ◽  
Silicon Whisker ◽  
Hydrogen Radical ◽  
Hot Filament

AbstractThis paper describes the growth mechanism of silicon whisker on a silicon substrate using hot filament CVD reactor. Only hydrogen is used as source gas. The particle layer could be obtained at high filament current condition under hydrogen ambient. XPS analysis result suggests that the particle is composed of tungsten silicide. The deposition condition of the particle layer is much depended on the substrate size, surface condition and the distance between the substrate and the filament. The experimental results suggest that the silicon hydride, which generated at the silicon surface by hydrogen radical etching, react with the tungsten filament material around the filament, depositing on the silicon substrate. The silicon surface is etched by hydrogen radical and its resultant surface morphology is much depended on the particle deposition pattern. Many silicon whiskers, which diameter is varied from 10 to 50 nm, are observed on the textured silicon surface when the residence time of the source gas in the reactor is long. Each whisker has a silicon particle on their tip. The silicon hydride generated by the hydrogen radical etching is much absorbed to the silicide particle when the source gas residence time is long, enabling the silicon whisker growth from the particle. The results suggest that nm size whisker structure is much stable compare to the bulk silicon against etching reaction.

Structure of Microcrystalline Silicon Carbide Films Prepared by Hydrogen-Radical-Enhanced Chemical Vapor Deposition in Magnetic Field

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4395-4399 ◽  
Author(s):  
Kanji Yasui ◽  
Masayoshi Muramoto ◽  
Tadashi Akahane
Keyword(s):  
Magnetic Field ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Hydrogen Radical
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