scholarly journals Low-Cost One-Step Fabrication of Highly Conductive ZnO:Cl Transparent Thin Films with Tunable Photocatalytic Properties via Aerosol-Assisted Chemical Vapor Deposition

2019 ◽  
Vol 1 (8) ◽  
pp. 1408-1417 ◽  
Author(s):  
Arreerat Jiamprasertboon ◽  
Sebastian C. Dixon ◽  
Sanjayan Sathasivam ◽  
Michael J. Powell ◽  
Yao Lu ◽  
...  
2015 ◽  
Vol 2 (2) ◽  
pp. 221-227 ◽  
Author(s):  
Peter Kovacik ◽  
Gabriella del Hierro ◽  
William Livernois ◽  
Karen K. Gleason

We demonstrate large-area conductive polymer films using oxidative chemical vapor deposition and apply them to low-cost and durable conductive textiles.


2001 ◽  
Vol 688 ◽  
Author(s):  
Yong Dong Jiang ◽  
Jake McGee ◽  
Todd A. Polley ◽  
Robert E. Schwerzel ◽  
Andrew T. Hunt

AbstractLithium niobate has a wide variety of applications because of its excellent ferroelectric, piezoelectric and electrooptic properties. In this study, epitaxial lithium niobate thin films were deposited on c-sapphire (α-Al2O3) by the low-cost, open-atmosphere Combustion Chemical Vapor Deposition (CCVD) technique developed by MicroCoating Technologies, Inc. It was found that deposition temperature plays a critical role in determining the growth behavior and quality of the lithium niobate thin films. XRD measurements show that the lithium niobate films are epitaxial with two in-plane orientations (twin structure). A surface roughness (root mean square) of about 4 nm was obtained from the deposited film (about 200 nm thick), as measured by optical profilometry.


2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


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