scholarly journals Stabilization of Low Valent Zirconium Nitrides in Titanium Nitride via Plasma-Enhanced Atomic Layer Deposition and Assessment of Electrochemical Properties

2020 ◽  
Vol 3 (6) ◽  
pp. 5095-5100
Author(s):  
Hyunho Noh ◽  
Nari Jeon ◽  
Alex B. F. Martinson ◽  
Joseph T. Hupp
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Electrochemical Properties ◽  
Atomic Layer ◽  
Zirconium Nitrides ◽  
Layer Deposition ◽  
Low Valent

scholarly journals Tertiary alkyl halides as growth activator and inhibitor for novel atomic layer deposition of low resistive titanium nitride

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015218
Author(s):  
Changbong Yeon ◽  
Jaesun Jung ◽  
Hyeran Byun ◽  
Kok Chew Tan ◽  
Taeho Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Alkyl Halides ◽  
Layer Deposition ◽  
Tertiary Alkyl

Synthesis of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and conformal Al2O3 coating by atomic layer deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (68) ◽  
pp. 63250-63255 ◽  
Author(s):  
Ming Xie ◽  
Tao Hu ◽  
Liu Yang ◽  
Yun Zhou
Keyword(s):  
Atomic Layer Deposition ◽  
Electrochemical Properties ◽  
High Voltage ◽  
Cathode Materials ◽  
Atomic Layer ◽  
Al2o3 Coating ◽  
Al Doping ◽  
Layer Deposition ◽  
Licoo2 Cathode

The electrochemical properties of high-voltage (4.7 V) LiCoO2 cathode materials with Al doping and a conformal Al2O3 coating by atomic layer deposition were studied in this paper.

Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition

2018 ◽  
Vol 36 (6) ◽  
pp. 06A105 ◽  
Author(s):  
Igor Krylov ◽  
Xianbin Xu ◽  
Ekaterina Zoubenko ◽  
Kamira Weinfeld ◽  
Santiago Boyeras ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Atomic Layer ◽  
Structure And Properties ◽  
Layer Deposition ◽  
Reactive Gas

Atomic layer deposition of ultra-trace Pt catalysts onto a titanium nitride nanowire array for electrocatalytic methanol oxidation

2019 ◽  
Vol 55 (88) ◽  
pp. 13283-13286 ◽  
Author(s):  
Junwei Sun ◽  
Xin Wang ◽  
Yanyan Song ◽  
Qianqian Wang ◽  
Yumei Song ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Methanol Oxidation ◽  
Current Density ◽  
Nanowire Array ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Pt Catalysts ◽  
Layer Deposition ◽  
Ultra Trace

Atomic layer deposition of ultra-trace Pt onto three-dimensional titanium nitride nanowire array was realized, and the obtained catalyst shows a much larger mass current density than commercial Pt/C towards electrocatalytic methanol oxidation.

Atomic Layer Deposition of TiN below 600 K Using N2H4

2018 ◽  
Vol 282 ◽  
pp. 232-237
Author(s):  
Adam Hinckley ◽  
Anthony Muscat
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Detection Limits ◽  
Atomic Layer ◽  
Volatile Species ◽  
X Ray ◽  
Layer Deposition

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

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