Correlating the Local Electrocatalytic Activity of Amorphous Molybdenum Sulfide Thin Films with Microscopic Composition, Structure, and Porosity

2020 ◽  
Vol 12 (39) ◽  
pp. 44307-44316
Author(s):  
Cameron L. Bentley ◽  
Roland Agoston ◽  
Binglin Tao ◽  
Marc Walker ◽  
Xiangdong Xu ◽  
...  
Vacuum ◽  
2004 ◽  
Vol 75 (4) ◽  
pp. 331-338 ◽  
Author(s):  
I.C Oliveira ◽  
K.G Grigorov ◽  
H.S Maciel ◽  
M Massi ◽  
C Otani

Author(s):  
Jianwen Liu ◽  
Wangping Wu ◽  
Xiang Wang

Developing novel hydrogen evolution reaction (HER) catalysts with high activity, high stability and low cost is of great importance for the applications of hydrogen energy. In this work, iridium-nickel (Ir-Ni) thin films were electrodeposited on a copper foam as electrocatalyst for HER, and electrodeposition mechanism of Ir-Ni film was studied. The morphology and chemical composition of thin films were determined by scanning electron microscopy and energy-dispersive spectroscopy, respectively. The electrocatalytic performances of the films were estimated by linear sweep voltammograms, electrochemical impedance spectroscopy and cyclic voltammetry. The results show that Ir-Ni thin films were attached to the substrate of porous structure and hollow topography. The deposition of Ni was preferable in the electrolyte without the addition of additives, and Ir-Ni thin film was alloyed, resulting in high deposition rate for Ir42Ni58 thin film, and subsequently an increase of Ir content in the thin films of Ir80Ni20 and Ir88Ni12. Ir-Ni thin films with Tafel slopes of 40-49 mV·dec-1 exhibited highly efficient electrocatalytic activity for HER. The electrocatalytic activity of Ir-Ni thin films showed a loading dependence. As the solution temperature raised from 20 oC to 60 oC, the hydrogen evolution performance of Ir-Ni thin films improved. The apparent activation energy value of Ir88Ni12 film was 7.1 kJ·mol-1. Long-term hydrogen evolution tests exhibited excellent electrocatalystic stability in alkaline solution.


1999 ◽  
Vol 562 ◽  
Author(s):  
N. N. Mateeva ◽  
P. C. Hogan ◽  
K. H. Dahmen

ABSTRACTThin films of lanthanum manganates doped with Ca2+, Sr2+, Ba2+ and Pb2+ have been deposited on Si(100) substrate and their electrical and magnetic properties were discussed with respect to the composition, structure and nature of the dopant. Buffer layers of YSZ and La0.8Al0.2O3 were employed and their effect on the materials was studied. Interesting magnetotransport properties were found in some of the films, where there is a large difference between the insulator-metal transition temperature and a ferromagnetic transition temperature.


2014 ◽  
Vol 602-603 ◽  
pp. 266-269 ◽  
Author(s):  
Gui Gen Wang ◽  
Hong Liang Qian ◽  
Qing Tao Li ◽  
Guo Shuang Qin ◽  
Lin Luo

Normal 0 7.8 磅 0 2 false false false MicrosoftInternetExplorer4 It is necessary to prepare compressive films on sapphire window for preventing its high-temperature failure. In this study, the yttrium oxide (Y2O3) thin films were deposited on the sapphire substrates by RF reactive magnetron sputtering with varying sputtering pressure. The as-deposited Y2O3films were also annealed. The composition, structure, refractive index and mechanical properties of the films were systematically analyzed by XPS, XRD, ellipsometry and nanoindention method, respectively. The influences of sputtering pressure on the deposition velocity and the refractive index were investigated. It can obtain desirable Y2O3thin films for the preparation conditions (sputtering pressure: 10Pa, substrate temperature: 500°C, RF power: 200W) after annealing in O2at 500°C for 1h. The refractive index and hardness both have the maximum value (1.8337 and 3.98 GPa), respectively. The elastic module has the minimum value (109.24 GPa). It is promising for the Y2O3film as the underlayer of protective coating of sapphire windows. <object classid="clsid:38481807-CA0E-42D2-BF39-B33AF135CC4D" id=ieooui> st1\:*{behavior:url(#ieooui) } /* Style Definitions */ table.MsoNormalTable {mso-style-name:普通表格; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-parent:""; mso-padding-alt:0pt 5.4pt 0pt 5.4pt; mso-para-margin:0pt; mso-para-margin-bottom:.0001pt; mso-pagination:widow-orphan; font-size:10.0pt; font-family:"Times New Roman"; mso-fareast-font-family:"Times New Roman"; mso-ansi-language:#0400; mso-fareast-language:#0400; mso-bidi-language:#0400;}


2012 ◽  
Vol 258 (24) ◽  
pp. 9706-9710 ◽  
Author(s):  
Li-ping Feng ◽  
Yin-quan Wang ◽  
Hao Tian ◽  
Zheng-tang Liu

2015 ◽  
Vol 3 (1) ◽  
pp. 56-68
Author(s):  
Nina V. Zarubina ◽  
◽  
Ivan V. Zarubin ◽  
Larisa N. Maskaeva ◽  
Vyacheslav F. Markov

1990 ◽  
Vol 192 ◽  
Author(s):  
L. Magafas ◽  
D. Girginoudi ◽  
N. Georgoulas ◽  
A. Thanailakis

ABSTRACTThe dependence of chemical composition, structure and optoelectronic properties of sputtered a-SiC:H thin films on substrate temperature, Ts, and hydrogen flow rate has been studied. The films are amorphous for the growth conditions used in this work. The chemical composition of the alloys is very little influenced by the Ts, whereas the hydrogen content and the optical absorption coefficient depends strongly on Ts and hydrogen flow rate.


2014 ◽  
Vol 439 ◽  
pp. 44-48 ◽  
Author(s):  
Sumanta Jana ◽  
Gopinath Mondal ◽  
Bibhas Chandra Mitra ◽  
Pulakesh Bera ◽  
Anup Mondal

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