scholarly journals Graphene–Silicon Device for Visible and Infrared Photodetection

2021 ◽  
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Giuseppe Luongo ◽  
Mohammad Bagher Askari ◽  
...  
Keyword(s):  
Infrared Photodetection ◽  
Silicon Device

Effects of Backside Circuit Edit on Transistor Characteristics

2007 ◽  
Author(s):  
R.K. Jain ◽  
T. Malik ◽  
T.R. Lundquist ◽  
Q.S. Wang ◽  
R. Schlangen ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Flip Chip ◽  
Intrinsic Parameters ◽  
Chip Type ◽  
Device Structures ◽  
Before And After ◽  
Silicon Device ◽  
Metal Layers

Abstract Backside circuit edit techniques on integrated circuits (ICs) are becoming common due to increase number of metal layers and flip chip type packaging. However, a thorough study of the effects of these modifications has not been published. This in spite of the fact that the IC engineers have sometimes wondered about the effects of backside circuit edit on IC behavior. The IC industry was well aware that modifications can lead to an alteration of the intrinsic behavior of a circuit after a FIB edit [1]. However, because alterations can be controlled [2], they have not stopped the IC industry from using the FIB to successfully reconfigure ICs to produce working “silicon” to prove design and mask changes. Reliability of silicon device structures, transistors and diodes, are investigated by monitoring intrinsic parameters before and after various steps of modification.

Photonic Silicon Device Physics.

1995 ◽  
Author(s):  
S. D. Russell ◽  
W. B. Dubbelday ◽  
R. L. Shimabukuro ◽  
P. R. De La Houssaye
Keyword(s):  
Device Physics ◽  
Silicon Device

Electroluminescing Porous Silicon Device.

1995 ◽  
Author(s):  
John Penczek ◽  
Rosemary L. Smith
Keyword(s):  
Porous Silicon ◽  
Silicon Device

scholarly journals Improve the Performance of SONOS Type UV TD Sensors Using IOHAOS with Enhanced UV Transparency ITO Gate

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 408
Author(s):  
Wen-Ching Hsieh ◽  
Fun-Cheng Jong ◽  
Wei-Ting Tseng
Keyword(s):  
Aluminum Oxide ◽  
Threshold Voltage ◽  
Indium Tin Oxide ◽  
Silicon Oxide ◽  
Poly Silicon ◽  
Ito Film ◽  
Post Annealing ◽  
Response Performance ◽  
Fading Rate ◽  
Silicon Device

This research demonstrates that an indium tin oxide–silicon oxide–hafnium aluminum oxide‒silicon oxide–silicon device with enhanced UV transparency ITO gate (hereafter E-IOHAOS) can greatly increase the sensing response performance of a SONOS type ultraviolet radiation total dose (hereafter UV TD) sensor. Post annealing process is used to optimize UV optical transmission and electrical resistivity characterization in ITO film. Via nano-columns (NCols) crystalline transformation of ITO film, UV transparency of ITO film can be enhanced. UV radiation causes the threshold voltage VT of the E-IOHAOS device to increase, and the increase of the VT of E-IOHAOS device is also related to the UV TD. The experimental results show that under UV TD irradiation of 100 mW·s/cm2, ultraviolet light can change the threshold voltage VT of E-IOHAOS to 12.5 V. Moreover, the VT fading rate of ten-years retention on E-IOHAOS is below 10%. The VT change of E-IOHAOS is almost 1.25 times that of poly silicon–aluminum oxide–hafnium aluminum oxide–silicon oxide–silicon with poly silicon gate device (hereafter SAHAOS). The sensing response performance of an E-IOHAOS UV TD sensor is greatly improved by annealed ITO gate.

Near-infrared photodetection with plasmon-induced hot electrons using silicon nanopillar array structure

2018 ◽  
Vol 30 (7) ◽  
pp. 075204 ◽  
Author(s):  
Zhiqiang Yang ◽  
Kang Du ◽  
Heng Wang ◽  
Fanfan Lu ◽  
Yang Pang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Hot Electrons ◽  
Array Structure ◽  
Infrared Photodetection

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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