Improving the Optical Quality of MoSe2 and WS2 Monolayers with Complete h-BN Encapsulation by High-Temperature Annealing

2021 ◽  
Author(s):  
Xiang Hua ◽  
Theodor Axenie ◽  
Mateo Navarro Goldaraz ◽  
Kyungnam Kang ◽  
Eui-Hyeok Yang ◽  
...  
Keyword(s):  
High Temperature ◽  
Optical Quality ◽  
High Temperature Annealing

High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation

1988 ◽  
Vol 100 ◽  
Author(s):  
C. Jaussaud ◽  
J. Margail ◽  
J. Stoemenos ◽  
M. Bruel
Keyword(s):  
Heat Treatment ◽  
High Temperature ◽  
Concentration Profile ◽  
Point Of View ◽  
High Temperature Annealing ◽  
Physical Mechanisms ◽  
Oxygen Migration ◽  
Buried Layer

ABSTRACTHigh temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.

Evolution of morphology and crystalline quality of DC-sputtered AlN films with high-temperature annealing

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1029 ◽  
Author(s):  
Yosuke Mogami ◽  
Shogo Motegi ◽  
Atsushi Osawa ◽  
Kazuto Osaki ◽  
Yukitake Tanioka ◽  
...  
Keyword(s):  
High Temperature ◽  
Crystalline Quality ◽  
High Temperature Annealing

scholarly journals Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

1997 ◽  
Vol 2 ◽  
Author(s):  
S. Strite ◽  
A. Pelzmann ◽  
T. Suski ◽  
M. Leszczynski ◽  
J. Jun ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Optical Quality ◽  
High Temperature Annealing ◽  
Implantation Damage ◽  
Optical Activation ◽  
Pl Intensity ◽  
Anneal Temperature ◽  
Good Optical Quality ◽  
Ion Implanted

We continue our investigations into the optical activation of Zn-implanted GaN annealed under ever higher N2 overpressure. The samples studied were epitaxial GaN/sapphire layers of good optical quality which were implanted with a 1013 cm−2 dose of Zn+ ions at 200 keV, diced into equivalent pieces and annealed under 10 kbar of N2. The N2 overpressure permitted annealing at temperatures up to 1250°C for 1 hr without GaN decomposition. The blue Zn-related photoluminescence (PL) signal rises sharply with increasing anneal temperature. The Zn-related PL intensity in the implanted sample annealed at 1250°C exceeded that of the epitaxially doped GaN:Zn standard proving that high temperature annealing of GaN under kbar N2 overpressure can effectively remove implantation damage and efficiently activate implanted dopants in GaN. We propose a lateral LED device which could be fabricated using ion implanted dopants activated by high temperature annealing at high pressure.

Improvement of the Crystalline Quality of β-Ga2O3 Films by High-Temperature Annealing

2012 ◽  
Vol 725 ◽  
pp. 273-276
Author(s):  
Motoki Takahara ◽  
Suguru Funasaki ◽  
Jyun Kudou ◽  
Isao Tsunoda ◽  
Kenichiro Takakura ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Crystalline Quality ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Before And After ◽  
Si Doped ◽  
Scanning Electron

For the purpose of improving the crystalline quality of undoped and Si doped β-Ga2O3 films, high temperature annealing at 900°C was performed. The crystalline quality of the films investigated using scanning electron microscopy and X-ray diffraction. Also the conductivity of the films is compared before and after the annealing. After the 900°C annealing, the XRD peaks intensity corresponding to β-Ga2O3 is increased. This result indicates that the crystalline quality improves by the high temperature annealing.

Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1056 ◽  
Author(s):  
Yuri Itokazu ◽  
Shunsuke Kuwaba ◽  
Masafumi Jo ◽  
Norihiko Kamata ◽  
Hideki Hirayama
Keyword(s):  
High Temperature ◽  
High Temperature Annealing

High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation

1987 ◽  
Vol 107 ◽  
Author(s):  
C. Jaussaud ◽  
J. Margail ◽  
J. Stoemenos ◽  
M. Bruel
Keyword(s):  
Heat Treatment ◽  
High Temperature ◽  
Concentration Profile ◽  
Point Of View ◽  
High Temperature Annealing ◽  
Physical Mechanisms ◽  
Oxygen Migration ◽  
Buried Layer

AbstractHigh temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.

The effect of nitridation temperature on the structural, optical and electrical properties of GaN nanoparticles

CrystEngComm ◽  
2014 ◽  
Vol 16 (17) ◽  
pp. 3584-3591 ◽  
Author(s):  
M. Gopalakrishnan ◽  
V. Purushothaman ◽  
V. Ramakrishnan ◽  
G. M. Bhalerao ◽  
K. Jeganathan
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Optical Quality ◽  
Precipitation Method ◽  
Optical And Electrical Properties ◽  
Co Precipitation ◽  
Nitridation Temperature

Nitridation at high temperature enhances the crystalline and optical quality of GaN nanoparticles synthesized by a novel chemical co-precipitation method.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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