Effect of Heterojunction on Exciton Binding Energy and Electron–Hole Recombination Probability in CdSe/ZnS Quantum Dots

2015 ◽  
Vol 11 (2) ◽  
pp. 462-471 ◽  
Author(s):  
Jennifer M. Elward ◽  
Arindam Chakraborty
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exciton Binding Energy ◽  
Electron Hole ◽  
Recombination Probability ◽  
Hole Recombination

Nanocrystalline Silicon for Optoelectronic Applications

MRS Bulletin ◽  
1998 ◽  
Vol 23 (4) ◽  
pp. 33-38 ◽  
Author(s):  
Leonid Tsybeskov
Keyword(s):  
Binding Energy ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Free Exciton ◽  
Nanocrystalline Silicon ◽  
Momentum Conservation ◽  
Exciton Binding Energy ◽  
Electron Hole ◽  
Energy Plus ◽  
Hole Recombination

Light emission in silicon has been intensively investigated since the 1950s when crystalline silicon (c-Si) was recognized as the dominant material in microelectronics. Silicon is an indirect-bandgap semiconductor and momentum conservation requires phonon assistance in radiative electron-hole recombination (Figure 1a, top left). Because phonons carry a momentum and an energy, the typical signature of phonon-assisted recombination is several peaks in the photoluminescence (PL) spectra at low temperature. These PL peaks are called “phonon replicas.” High-purity c-Si PL is caused by free-exciton self-annihilation with the exciton binding energy of ~11 meV. The TO-phonon contribution in conservation processes is most significant, and the main PL peak (~1.1 eV) is shifted from the bandgap value (~1.17 eV) by ~70 meV—that is, the exciton binding energy plus TO-phonon energy (Figure 1a).

The polaronic shift of exciton binding energy in quantum dots with a degenerate valence band

2002 ◽  
Vol 14 (48) ◽  
pp. 13357-13365 ◽  
Author(s):  
Arshak L Vartanian ◽  
Anna L Asatryan ◽  
Albert A Kirakosyan
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Valence Band ◽  
Exciton Binding Energy

LOCALIZED EXCITONS IN SELF-ASSEMBLED InxGa1-xN QUANTUM DOTS

2005 ◽  
Vol 19 (12) ◽  
pp. 589-598
Author(s):  
XIAN-QI DAI ◽  
FENG-ZHEN HUANG ◽  
JUN-JIE SHI
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Variational Approach ◽  
Structural Parameters ◽  
Exciton Binding Energy ◽  
Mass Approximation ◽  
Energy Maximum ◽  
Localized Excitons ◽  
The Relationship ◽  
Good Agreement

Within the framework of effective-mass approximation, the exciton states localized in cylindrical InGaN quantum dots (QDs) are investigated using a variational approach. The relationship between the exciton states and structural parameters of QDs with radius R and height L are studied in detail. The numerical results show that the exciton binding energy is sensitive to the ratio of R/L for a QD with a given volume. There is a maximum in the binding energy, where the electrons and holes are the most efficiently confined in the QDs with special structural parameters. The binding energy maximum can be obtained at about L = 1.7 nm for different QD volumes. The exciton binding energy and emission wavelength depend sensitively on structural parameters and the In content in the In x Ga 1-x N active layer. Our calculated emission wavelengths are in good agreement with experimental data.

Observation of confinement-dependent exciton binding energy of GaN quantum dots

1998 ◽  
Vol 73 (8) ◽  
pp. 1104-1106 ◽  
Author(s):  
Peter Ramvall ◽  
Satoru Tanaka ◽  
Shintaro Nomura ◽  
Philippe Riblet ◽  
Yoshinobu Aoyagi
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Exciton Binding Energy
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