Rapid Electrochemical Cleaning Silver Nanowire Thin Films for High-Performance Transparent Conductors

2019 ◽  
Vol 141 (31) ◽  
pp. 12251-12257 ◽  
Author(s):  
Yongjie Ge ◽  
Jianfang Liu ◽  
Xiaojun Liu ◽  
Jiawen Hu ◽  
Xidong Duan ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Silver Nanowire ◽  
Transparent Conductors ◽  
Electrochemical Cleaning

Anisotropic optical properties of large-scale aligned silver nanowire films via controlled coffee ring effects

RSC Advances ◽  
2015 ◽  
Vol 5 (49) ◽  
pp. 39103-39109 ◽  
Author(s):  
Weiping Zhou ◽  
Anming Hu ◽  
Shi Bai ◽  
Ying Ma ◽  
Denzel Bridges
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Physical Properties ◽  
High Performance ◽  
Large Scale ◽  
Silver Nanowire ◽  
Electromechanical Systems ◽  
One Dimensional ◽  
Coffee Ring ◽  
One Dimensional Nanostructures

Preparation of thin films with one-dimensional nanostructures and unique physical properties for high-performance electronic, optoelectronic, and electromechanical systems.

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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