Improved Controllability of Opal Film Growth Using Capillaries for the Deposition Process

2005 ◽  
Vol 109 (20) ◽  
pp. 9939-9945 ◽  
Author(s):  
Hong-Liang Li ◽  
Wenting Dong ◽  
Hans-Josef Bongard ◽  
Frank Marlow
Keyword(s):  
Film Growth ◽  
Deposition Process ◽  
Opal Film

In situ transient study of polymer film growth via simultaneous correlation of charge, mass, and ellipsometric measurements

2008 ◽  
Vol 80 (11) ◽  
pp. 2439-2449 ◽  
Author(s):  
Vojtech Svoboda ◽  
Bor Yann Liaw
Keyword(s):  
Polymer Film ◽  
Quartz Crystal ◽  
Spatial Information ◽  
Film Growth ◽  
Deposition Process ◽  
Imaging Ellipsometry ◽  
Adsorption Reduction ◽  
Temporal And Spatial ◽  
Transient Study

Using three synchronized, in situ, nonintrusive, real-time characterization techniques to conduct transient observations, we revealed mechanistic details of a polymer film growth. A thin methylene green (MG) polymer coating (of the order of 35 nm) was used as a model system in this electrochemical microgravimetric imaging ellipsometry (EmIE) investigation. The direct correlation of changes in mass (via quartz crystal microbalance, QCM), ellipsometric angles (via imaging ellipsometry) with electrochemical conditions (in cyclic voltammetry, CV) provides discrete temporal and spatial information to help us decipher the underlying steps, from which we were able to separate adsorption, reduction, oxidation, desorption, and polymerization regimes involved in the deposition process. The evidence revealed in this study could have broad impact on the general understanding regarding how a film is deposited onto a metal surface.

High Throughput Optimization of Y-Type Magnetoplumbite Epitaxial thin Film Growth by Combinatorial Pulsed Laser Deposition Technique

2001 ◽  
Vol 700 ◽  
Author(s):  
I. Ohkubo ◽  
Y. Matsumoto ◽  
M. Ohtani ◽  
T. Hasegawa ◽  
K. Ueno ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Film Growth ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Throughput Optimization ◽  
Tem Analysis ◽  
First Time

AbstractThin films of Y-type magnetoplumbite (Ba2Co2Fe12O22: Co2Y) with such a huge unit cell length as 43.5 Å has been successfully fabricated for the first time with the aid of combinatorial optimization of pulsed laser deposition process. Planning a thickness gradient CoO buffer layer on MgAl2O4(111) substrate was very effective for prevent the phase separation of Co deficient impurity (BaFe2O4) to reside in the formation of desired Co2Y phase.From the TEM analysis, the CoO buffer layer of optimum thickness was incorporated into the Co2Y film to make theinterface with the make an atomically sharp.

scholarly journals Sputter Deposition of Semiconductor Superlattices for Thermoelectric Applications

1996 ◽  
Vol 450 ◽  
Author(s):  
Andrew V. Wagner ◽  
Ronald J. Foreman ◽  
Joseph C. Farmer ◽  
Troy W. Barbee
Keyword(s):  
Film Growth ◽  
Lead Telluride ◽  
Deposition Process ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
High Rate ◽  
Dramatic Improvement ◽  
High Deposition Rate ◽  
High Quality ◽  
Quantum Confined

ABSTRACTTheoretical dramatic improvement of the thermoelectric properties of materials by using quantum confinement in novel semiconductor nanostructures has lead to considerable interest in the thermoelectric community. Therefore, we are exploring the critical materials issues for fabrication of quantum confined structures by magnetron sputtering in the lead telluride and bismuth telluride families of materials. We have synthesized modulated structures from thermoelectric materials with bilayer periods of as little as 3.2 nm and shown that they are stable at deposition temperatures high enough to grow quality films. Issues critical to high quality film growth have been investigated such as nucleation and growth conditions and their effect on crystal orientation and growth morphology. These investigations show that nucleating the film at a temperature below the growth temperature of optimum electronic properties produces high quality films. Our work with sputter deposition, which is inherently a high rate deposition process, builds the technological base necessary to develop economical production of these advanced materials. High deposition rate is critical since, even if efficiencies comparable with CFC based refrigeration systems can be achieved, large quantities of quantum confined materials will be necessary for cost-competitive uses.

A mechanism of CVD diamond film growth deduced from the sequential deposition from sputtered carbon and atomic hydrogen

1994 ◽  
Vol 9 (6) ◽  
pp. 1546-1551 ◽  
Author(s):  
Darin S. Olson ◽  
Michael A. Kelly ◽  
Sanjiv Kapoor ◽  
Stig B. Hagstrom
Keyword(s):  
Growth Mechanism ◽  
Atomic Hydrogen ◽  
Film Growth ◽  
Deposition Process ◽  
Cvd Diamond ◽  
Surface Growth ◽  
Diamond Surface ◽  
Hydrogen Flux ◽  
Sequential Deposition ◽  
Disordered Carbon

We describe a growth mechanism of CVD diamond films consisting of a series of surface reactions. It is derived from experimental observations of a sequential deposition process in which incident carbon flux and atomic hydrogen flux were independently varied. In this sequential process, film growth rate increased with atomic hydrogen exposure, and a saturation in the utilization of carbon was observed. These features are consistent with a surface growth process consisting of the following steps: (i) the carburization of the diamond surface, (ii) the deposition of highly disordered carbon on top of this surface, (iii) the etching of disordered carbon by atomic hydrogen, (iv) the conversion of the carburized diamond surface to diamond at growth sites by atomic hydrogen, and (v) the carburization of newly grown diamond surface. The nature of the growth sites on the diamond surface has not been determined experimentally, and the existence of the carburized surface layer has not been demonstrated experimentally. The surface growth mechanism is the only one consistent with the growth observed in conventional diamond reactors and the sequential reactor, while precluding the necessity of gas phase precursors.

THE INFLUENCE OF THE SURFACE ORIENTATION ON THE MORPHOLOGY DURING HOMOEPITAXIAL GROWTH OF NICKEL BY MOLECULAR DYNAMICS SIMULATION

2017 ◽  
Vol 24 (02) ◽  
pp. 1750019 ◽  
Author(s):  
A. HASSANI ◽  
A. MAKAN ◽  
K. SBIAAI ◽  
A. TABYAOUI ◽  
A. HASNAOUI
Keyword(s):  
Molecular Dynamics ◽  
Surface Roughness ◽  
Film Growth ◽  
Deposition Process ◽  
Dynamics Simulation ◽  
Appearance Time ◽  
Homoepitaxial Growth ◽  
Embedded Atom ◽  
Upper Level ◽  
The One

Homoepitaxial growth film for (001), (110) and (111) Ni substrates is investigated by means of molecular dynamics (MD) simulation. Embedded atom method (EAM) is considered to represent the interaction potential between nickel atoms. The simulation is performed at 300[Formula: see text]K using an incident energy of 0.06[Formula: see text]eV. In this study, the deposition process is performed periodically and the period, [Formula: see text], is relative to a perfect layer filling. The coverage rate of the actual expected level, [Formula: see text], can be considered a determinant for thin-film growth of nickel. The [Formula: see text] level is the most filled level during the deposition on (001) substrate, while it is the less filled one in the case of (111) substrate. Moreover, the upper level is the one which is responsible for the surface roughness and the appearance time of an upper layer may also be a factor influencing the surface roughness. The deposition on (111) substrate induces the most rigorous surface with a rapid appearance time of the upper layers. The [Formula: see text] layers are almost completely filled for all substrates. The [Formula: see text] and lower layers are completely filled for (001) and (110) substrates while for (111) substrate the completely filled layers are [Formula: see text] and lower ones.

scholarly journals New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

2004 ◽  
Vol 808 ◽  
Author(s):  
J.P.M. Hoefnagels ◽  
E. Langereis ◽  
M.C.M. van de Sanden ◽  
W.M.M. Kessels
Keyword(s):  
Real Time ◽  
Surface Science ◽  
Spectroscopic Ellipsometry ◽  
Atomic Hydrogen ◽  
Film Growth ◽  
Ultrahigh Vacuum ◽  
Deposition Process ◽  
Diagnostic Techniques ◽  
Hot Wire ◽  
Optical Diagnostic

ABSTRACTA new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.

The Effects of Collimator Life Time on the Ti and Tin Film Growth Rates and Conformalities in Sputter Deposition Processes: Experiments and Simulations

1995 ◽  
Vol 387 ◽  
Author(s):  
Hung Liao ◽  
Hannes Stippel ◽  
Krishna Reddy ◽  
Sam Geha ◽  
Kevin Brown ◽  
...  
Keyword(s):  
Growth Rates ◽  
Film Growth ◽  
Side Wall ◽  
Life Time ◽  
Deposition Process ◽  
Sputter Deposition ◽  
Cross Sectional ◽  
Tin Film ◽  
Side Walls ◽  
Deposition Processes

AbstractExperimental and simulation studies were conducted in an attempt to understand the effects of collimator life time on the Ti and TiN film growth rates and conformalities in sputter deposition processes. The Ti and TiN films were deposited with and without collimation. The hexagonal cells of the collimator used in this study have a 1:1 aspect ratio. A Monte Carlo based simulator was used to calculate the angular distributions of species exiting from a collimator cell and the percentage decrease in the rate of film growth as a function of the collimator life time. Then, a low pressure deposition process simulator, EVOLVE, was used to predict the conformalities of deposited films in contacts or vias, assuming that the films were uniformly deposited on the side-walls of collimator cells. We conclude that the loss in growth rate is largely due to the shrinkage in the cross sectional area of the collimator cell inlets. We arrive at this conclusion after comparing an estimated film thickness on the collimator side-walls with experimental measurements. With extended collimator usage, the predicted and experimental film profiles in contacts or vias show increasing bottom coverage and decreasing side-wall coverages.

scholarly journals Preparation and Characterization of NbxOy Thin Films: A Review

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1246
Author(s):  
Nwanna Charles Emeka ◽  
Patrick Ehi Imoisili ◽  
Tien-Chien Jen
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Deposition Process ◽  
Optical Systems ◽  
Electrochromic Devices ◽  
Comprehensive Properties ◽  
Direct Band ◽  
Film Characteristics ◽  
The Impact

Niobium oxides (NbO, NbO2, Nb2O5), being a versatile material has achieved tremendous popularity to be used in a number of applications because of its outstanding electrical, mechanical, chemical, and magnetic properties. NbxOy films possess a direct band gap within the ranges of 3.2–4.0 eV, with these films having utility in different applications which include; optical systems, stainless steel, ceramics, solar cells, electrochromic devices, capacitor dielectrics, catalysts, sensors, and architectural requirements. With the purpose of fulfilling the requirements of a vast variety of the named applications, thin films having comprehensive properties span described by film composition, morphology, structural properties, and thickness are needed. The theory, alongside the research status of the different fabrication techniques of NbxOy thin films are reported in this work. The impact of fabrication procedures on the thin film characteristics which include; film thickness, surface quality, optical properties, interface properties, film growth, and crystal phase is explored with emphases on the distinct deposition process applied, are also described and discussed.

Chemical Properties of A-Si:H Interface Layers on Oxide-Covered and Hydrogen-Terminated Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
Jürgen Knobloch ◽  
Peter Hess
Keyword(s):  
Film Growth ◽  
Substrate Surface ◽  
Chemical Properties ◽  
Deposition Process ◽  
Native Oxide ◽  
Difference Spectra ◽  
Initial Stage ◽  
Laser Cvd ◽  
Interface Layers

AbstractHigh quality a-Si:H films were deposited by pulsed VUV (157nm) laser CVD, allowing digital control of the deposition process. Nucleation and growth on native oxide-covered Si (100) and on H-terminated Si (111) surfaces were studied in situ by FTIR transmission spectroscopy with sub-monolayer sensitivity. The film thickness was monitored simultaneously using a quartz crystal microbalance (QCM) with comparable resolution. The in situ spectra reveal that the nature of the substrate surface significantly influences the hydrogen bonding configuration in the interface region. In both cases the assumed cluster growth during the initial stage is characterized by a band around 2100cm−1, which is assigned to SiHX (x = 1 – 3) surface modes. This band broadens until the clusters coalesce and band saturation occurs. At this time a second band starts to grow at 2000cm−1, which is attributed to bulk SiH bonds. Difference spectra calculated for layers at different depths with definite thickness and the deconvolution of the broad feature observed during the very first stage of film growth indicate the existence of a hydrogen-rich layer at the substrate surface whose composition and thickness depend on the properties of the substrate surface.

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