Systematic Control of the Nanostructure of Semiconducting-Ferroelectric Polymer Composites in Thin Film Memory Devices

In recent years ferroelectric polymer-based nonvolatile memory devices have attracted much attention due to their flexibility, transparency and ease of production. However, their electrical stability is seldom studied. In this letter we report the observation of electric fatigue in metal/ferroelectric polymer/SiO2/p-Si capacitor memories, which is compared with the electric fatigue obtained from metal/ferroelectric polymer/p-Si capacitors. Our experiments indicate that the existence of SiO2 layer has greatly improved the fatigue endurance in metal/ferroelectric polymer/SiO2/p-Si capacitors. We also discuss the possible mechanism causing this improved fatigue endurance.

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Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

10.20944/preprints202009.0499.v1 ◽

2020 ◽

Author(s):

Jing Wang ◽

Bailey Bedford ◽

Chanle Chen ◽

Ludi Miao ◽

Binghcheng Luo

Keyword(s):

Thin Film ◽

Oxygen Vacancy ◽

Excitation Energy ◽

Ultraviolet Light ◽

Light Response ◽

Resistance Switching ◽

The State ◽

Switching Behavior ◽

Memory Devices ◽

Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

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A Review on Pure and Semiconductor Functionalized Ferroelectric Polymer-Based Memory Devices

10.1007/978-981-16-5407-7_27 ◽

2021 ◽

pp. 217-224

Author(s):

Nipom Sekhar Das ◽

Avijit Chowdhury

Keyword(s):

Memory Devices ◽

Ferroelectric Polymer

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Nanostructured Ferroelectric-Polymer Composites for Capacitive Energy Storage

Small Methods ◽

10.1002/smtd.201700399 ◽

2018 ◽

Vol 2 (6) ◽

pp. 1700399 ◽

Cited By ~ 57

Author(s):

He Li ◽

Feihua Liu ◽

Baoyan Fan ◽

Ding Ai ◽

Zongren Peng ◽

...

Keyword(s):

Energy Storage ◽

Polymer Composites ◽

Capacitive Energy Storage ◽

Ferroelectric Polymer

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Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.1056 ◽

2014 ◽

Vol 602-603 ◽

pp. 1056-1059 ◽

Cited By ~ 2

Author(s):

Min Chang Kuan ◽

Fann Wei Yang ◽

Chien Min Cheng ◽

Kai Huang Chen ◽

Jian Tz Lee

Keyword(s):

Thin Film ◽

Thin Films ◽

Manganese Oxide ◽

Random Access ◽

Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Resistance Random Access Memory ◽

Non Volatile Memory ◽

Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

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