Energy Level Modification in Lead Sulfide Quantum Dot Thin Films through Ligand Exchange

ACS Nano ◽  
2014 ◽  
Vol 8 (6) ◽  
pp. 5863-5872 ◽  
Author(s):  
Patrick R. Brown ◽  
Donghun Kim ◽  
Richard R. Lunt ◽  
Ni Zhao ◽  
Moungi G. Bawendi ◽  
...  
2019 ◽  
Vol 2 (10) ◽  
pp. 6135-6143 ◽  
Author(s):  
Haodong Tang ◽  
Jialin Zhong ◽  
Wei Chen ◽  
Kanming Shi ◽  
Guanding Mei ◽  
...  

2016 ◽  
Vol 9 (9) ◽  
pp. 2916-2924 ◽  
Author(s):  
Mark J. Speirs ◽  
Dmitry N. Dirin ◽  
Mustapha Abdu-Aguye ◽  
Daniel M. Balazs ◽  
Maksym V. Kovalenko ◽  
...  

The temperature dependent behaviour of PbS QD solar cells and thin films was investigated, and guidelines for further improvement of the power conversion efficiency are given.


2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Hardin Dunlap ◽  
Perry J. Pellechia ◽  
Andrew Greytak

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...


Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.


2021 ◽  
pp. 101149
Author(s):  
Sk. Taheruddin Ahamed ◽  
Chiranjit Kulsi ◽  
Kirti ◽  
Dipali Banerjee ◽  
Divesh Narayan Srivastava ◽  
...  
Keyword(s):  

2021 ◽  
Vol 13 (4) ◽  
pp. 624-631
Author(s):  
Jianyao Lin ◽  
Yu Chen ◽  
Yun Ye ◽  
Sheng Xu ◽  
Tailiang Guo ◽  
...  

We present a ligand-exchange-free photo-patternable quantum-dot photoresist (QDPR) with high photolithographic uniformity. The dispersion mechanism between the QD’s surface ligands and the functional groups of photoresist polymers are studied. Results show that the dispersibility and photoluminescent intensity of this QDPR can be both improved by controlling dispersant and antioxidant. For device demonstration, multi-colored quantum dot color conversion films (QDCCF) were prepared and patterned by a photolithography process. High QD dispersibility and film-forming uniformity were both achieved with this QDCCF. It is believed that the proposed QDPR has the potential to be extensively used in lighting or display applications.


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