scholarly journals Topological electronic states in HfRuP family superconductors

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuting Qian ◽  
Simin Nie ◽  
Changjiang Yi ◽  
Lingyuan Kong ◽  
Chen Fang ◽  
...  
Keyword(s):  
Theoretical Calculations ◽  
Hexagonal Phase ◽  
Weyl Semimetal ◽  
Wide Range ◽  
Chern Numbers ◽  
Topological States ◽  
High Transition ◽  
Noncentrosymmetric Superconductors ◽  
Insulating Phase ◽  
Nontrivial Topology

AbstractBased on the first-principles calculations and experimental measurements, we report that the hexagonal phase of ternary transition metal pnictides TT’X (T=Zr, Hf; T’=Ru; X=P, As), which are well-known noncentrosymmetric superconductors with relatively high transition temperatures, host nontrivial bulk topology. Before the superconducting phase transition, we find that HfRuP belongs to a Weyl semimetal phase with 12 pairs of type-II Weyl points, while ZrRuAs, ZrRuP and HfRuAs belong to a topological crystalline insulating phase with trivial Fu-Kane $${{\mathbb{Z}}}_{2}$$Z2 indices but nontrivial mirror Chern numbers. High-quality single crystal samples of the noncentrosymmetric superconductors with these two different topological states have been obtained and the superconductivity is verified experimentally. The wide-range band structures of ZrRuAs have been identified by ARPES and reproduced by theoretical calculations. Combined with intrinsic superconductivity, the nontrivial topology of the normal state may generate unconventional superconductivity in both bulk and surfaces. Our findings could largely inspire the experimental searching for possible topological superconductivity in these compounds.

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

scholarly journals METAL–INSULATOR TRANSITIONS IN TETRAHEDRAL SEMICONDUCTORS UNDER LATTICE CHANGE

2004 ◽  
Vol 18 (07) ◽  
pp. 975-988
Author(s):  
SHAILESH SHUKLA ◽  
DEEPAK KUMAR ◽  
NITYA NATH SHUKLA ◽  
RAJENDRA PRASAD
Keyword(s):  
Dielectric Constant ◽  
Fermi Surface ◽  
Lattice Constant ◽  
Critical Behavior ◽  
Tight Binding ◽  
Metal Insulator ◽  
Wide Range ◽  
Insulating Phase ◽  
Tetrahedral Semiconductors ◽  
Lattice Compression

Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by expansion which is rather peculiar; in all cases the direct gap at Γ point closes on expansion and thereafter a zero-gap state persists over a wide range of lattice constant. The solids become metallic at an expansion of 13% to 15% when an electron Fermi surface around L-point and a hole Fermi surface at Γ-point develop. We provide an understanding of this behavior in terms of arguments based on symmetry and simple tight-binding considerations. We also report results on the critical behavior of conductivity in the metal phase and the static dielectric constant in the insulating phase and find common behavior. We consider the possibility of excitonic phases and distortions which might intervene between insulating and metallic phases.

First-Principles Studies of the Magnetic Properties of hcp Cr in Cr/Cu(111) and Cr/Ru(0001) Superlattices

2002 ◽  
Vol 721 ◽  
Author(s):  
G. Y. Guo
Keyword(s):  
First Principles ◽  
Density Functional ◽  
Recent Observation ◽  
Theoretical Calculations ◽  
Ferromagnetic State ◽  
Full Potential ◽  
Generalized Gradient ◽  
Plane Wave Method ◽  
Wide Range ◽  
Linearized Augmented Plane Wave

AbstractLatest first-principles density functional theoretical calculations using the generalized gradient approximation and highly accurate all-eleectron full-potential linearized augmented plane wave method, show that bulk hcp Cr would be a paramagnet and that no ferromagnetic state could be stabilized over a wide range of volume [1]. To understand the recent observation of the weakly ferromagnetic state of Cr in hcp Cr/Ru (0001) superlattices [2], the same theoretical calculations have been carried out for the hcp Cr3/Ru7 (0001) and hcp Cr3/fcc Cu6 (111) superlattices. The Cr/Ru superlattice is found to be ferromagnetic with a small magnetic moment of ∼0.31μB/Cr while in contrast, Cr/Cu superlattice is found to be nonmagnetic.

scholarly journals Strongly interacting dipolar-polaritons

2018 ◽  
Vol 4 (10) ◽  
pp. eaat8880 ◽  
Author(s):  
Itamar Rosenberg ◽  
Dror Liran ◽  
Yotam Mazuz-Harpaz ◽  
Kenneth West ◽  
Loren Pfeiffer ◽  
...  
Keyword(s):  
Electric Field ◽  
Interaction Strength ◽  
Dipolar Interaction ◽  
Electronic Excitations ◽  
Quantum Simulators ◽  
Strongly Interacting ◽  
Wide Range ◽  
Exciton Polaritons ◽  
Topological States ◽  
Large Interaction

Exciton-polaritons are mutually interacting quantum hybridizations of confined photons and electronic excitations. Here, we demonstrate a system of optically guided, electrically polarized exciton-polaritons (“dipolaritons”) that displays up to 200-fold enhancement of the polariton-polariton interaction strength compared to unpolarized polaritons. The magnitude of the dipolar interaction enhancement can be turned on and off and can be easily tuned over a very wide range by varying the applied polarizing electric field. The large interaction strengths and the very long propagation distances of these fully guided dipolaritons open up new opportunities for realizing complex quantum circuitry and quantum simulators, as well as topological states based on exciton-polaritons, for which the interactions between polaritons need to be large and spatially or temporally controlled. The results also raise fundamental questions on the origin of these large enhancements.

Investigations of the Effect of Annulus Taper on Transonic Turbine Cascade Flow

1986 ◽  
Vol 108 (2) ◽  
pp. 285-292 ◽  
Author(s):  
W. Bra¨unling ◽  
F. Lehthaus
Keyword(s):  
Surface Pressure ◽  
Theoretical Calculations ◽  
Three Dimensional ◽  
Computer Code ◽  
Numerical Results ◽  
Test Facility ◽  
Turbine Cascade ◽  
Pressure Distributions ◽  
Aspect Ratios ◽  
Wide Range

In a test facility for rotating annular cascades with three conical test sections of different taper angles (0, 30, 45 deg), experiments are conducted for two geometrically different turbine cascade configurations, a hub section cascade with high deflection and a tip section cascade with low deflection. The evaluation of time-averaged data derived from conventional probe measurements upstream and downstream of the test wheel in the machine-fixed absolute system is based on the assumption of axisymmetric stream surfaces. The cascade characteristics, i.e., mass flow, deflection, and losses, for a wide range of inlet flow angles and outlet Mach numbers are provided in the blade-fixed relative system with respect to the influence of annulus taper. Some of the results are compared with simple theoretical calculations. To obtain some information about the spatial structure of the flow within the cascade passages, surface pressure distributions on the profiles of the rotating test wheels are measured at three different radial blade sections. For some examples those distributions are compared with numerical results on plane cascades of the same sweep and dihedral angles and the same aspect ratios. The computer code used is based on a three-dimensional time-marching finite-volume method solving the Euler equations. Both experimental and numerical results show a fairly good qualitative agreement in the three-dimensional blade surface pressure distributions. This work will be continued with detailed investigations on the spatial flow structure.

scholarly journals A First-Principles Study of Nonlinear Elastic Behavior and Anisotropic Electronic Properties of Two-Dimensional HfS2

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 446
Author(s):  
Mahdi Faghihnasiri ◽  
Aidin Ahmadi ◽  
Samaneh Alvankar Golpayegan ◽  
Saeideh Garosi Sharifabadi ◽  
Ali Ramazani
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Electronic Band Structure ◽  
Hexagonal Phase ◽  
Strain Engineering ◽  
Elastic Behavior ◽  
Potential Candidate ◽  
Two Dimensional ◽  
Electronic Band ◽  
Wide Range

We utilize first principles calculations to investigate the mechanical properties and strain-dependent electronic band structure of the hexagonal phase of two dimensional (2D) HfS2. We apply three different deformation modes within −10% to 30% range of two uniaxial (D1, D2) and one biaxial (D3) strains along x, y, and x-y directions, respectively. The harmonic regions are identified in each deformation mode. The ultimate stress for D1, D2, and D3 deformations is obtained as 0.037, 0.038 and 0.044 (eV/Ang3), respectively. Additionally, the ultimate strain for D1, D2, and D3 deformation is obtained as 17.2, 17.51, and 21.17 (eV/Ang3), respectively. In the next step, we determine the second-, third-, and fourth-order elastic constants and the electronic properties of both unstrained and strained HfS2 monolayers are investigated. Our findings reveal that the unstrained HfS2 monolayer is a semiconductor with an indirect bandgap of 1.12 eV. We then tune the bandgap of HfS2 with strain engineering. Our findings reveal how to tune and control the electronic properties of HfS2 monolayer with strain engineering, and make it a potential candidate for a wide range of applications including photovoltaics, electronics and optoelectronics.

Formation of Intermetallics and Grain Boundary Diffusion in Cu-Al and Au-Al Thin Film Couples

1981 ◽  
Vol 10 ◽  
Author(s):  
J. M. Vandenberg ◽  
F. J. A. Den Broeder ◽  
R. A. Hamm
Keyword(s):  
Thin Film ◽  
Hexagonal Phase ◽  
Interface Reaction ◽  
Aluminum Film ◽  
Temperature Dependent ◽  
X Ray ◽  
Wide Range ◽  
Al Thin Film ◽  
Rich Side

An in situ annealing X-ray study was applied to Cu-Al thin film couples over a wide range of copper-to-aluminum film ratios. This new technique, which has been previously described for a study on the Au-Al thin film system, enables us to make a temperature-dependent photographic X-ray analysis. The present study indicated that only a limited number of the wide variety of bulk phases form in the Cu-Al thin film interface, while some of these phases in the interface are transient. In the transient stages of the interface reaction, the f.c.c.-ordered phase β-Cu3A1 grows over the entire range of copper-to-aluminum film ratios after the first nucleation of CuA12, indicating a two-step nucleation reaction. On the aluminum-rich side, this phase transforms to a new ordered hexagonal phase β′. It could be interpreted as a superlattice of the metastable hexagonal ω phase occurring in zirconium-based alloys. The end phases are CuA1 and CuAl2.

Spin Fluctuation Effect on Electrical Resistivity of La0.8Ca0.2MnO3 Manganite Nanoparticles

2015 ◽  
Vol 14 (04) ◽  
pp. 1550010 ◽  
Author(s):  
K. K. Choudhary
Keyword(s):  
Experimental Data ◽  
Electrical Resistivity ◽  
Temperature Regime ◽  
Spin Fluctuation ◽  
Metallic Phase ◽  
Spin Fluctuations ◽  
Electron Interaction ◽  
Manganite Nanoparticles ◽  
Wide Range ◽  
Insulating Phase

The electrical resistivity ρ(T) of La 0.8 C 0.2 MnO 3 manganite nanoparticles (particle size 18 nm and 70 nm) significantly depends on temperature and size of nanoparticles. ρ(T) of 70 nm La 0.8 C 0.2 MnO 3 manganite exhibits metallic phase in low temperature regime (T < 250 K ), develops a maxima near 250 K and decrease with T at high temperatures (250 K < T < 300 K ). However, the ρ(T) of 18 nm La 0.8 C 0.2 MnO 3 manganite shows insulating phase in overall temperature regime, where resistivity decrease with temperature. The resistivity in metallic phase is theoretically analyzed by considering the strong spin fluctuations effect which is modelled using Drude–Lorentz type function. In addition to the spin fluctuation-induced contribution the electron-phonon and electron-electron ρe-e(T) = BT2 contributions are also incorporated for complete understanding of experimental data. The contributions to the resistivity by inherent acoustic phonons (ρac) as well as high frequency optical phonons (ρop) were estimated using Bloch–Gruneisen [BG] model of resistivity. It is observed that the resistivity contribution due to electron-electron interaction shows typical quadratic temperature dependence. Resistivity in Semiconducting/insulating phase is discussed with small polaron conduction (SPC) model. Finally the theoretically calculated resistivity compared with experimental data which found consistent in wide range of temperature.

scholarly journals Transition Metal Dichalcogenides as Strategy for High Temperature Electron-Hole Superfluidity

2020 ◽  
Vol 5 (1) ◽  
pp. 22
Author(s):  
Sara Conti ◽  
David Neilson ◽  
François M. Peeters ◽  
Andrea Perali
Keyword(s):  
Transition Metal ◽  
Double Layer ◽  
Transition Metal Dichalcogenides ◽  
Mean Field ◽  
Transition Metal Dichalcogenide ◽  
Transition Temperatures ◽  
Electron Hole ◽  
Interesting Phenomenon ◽  
Wide Range ◽  
High Transition

Condensation of spatially indirect excitons, with the electrons and holes confined in two separate layers, has recently been observed in two different double layer heterostructures. High transition temperatures were reported in a double Transition Metal Dichalcogenide (TMD) monolayer system. We briefly review electron-hole double layer systems that have been proposed as candidates for this interesting phenomenon. We investigate the double TMD system WSe 2 /hBN/MoSe 2 , using a mean-field approach that includes multiband effects due to the spin-orbit coupling and self-consistent screening of the electron-hole Coulomb interaction. We demonstrate that the transition temperature observed in the double TMD monolayers, which is remarkably high relative to the other systems, is the result of (i) the large electron and hole effective masses in TMDs, (ii) the large TMD band gaps, and (iii) the presence of multiple superfluid condensates in the TMD system. The net effect is that the superfluidity is strong across a wide range of densities, which leads to high transition temperatures that extend as high as T B K T = 150 K.

The Base Pressure Problem in Transonic Turbine Cascades

1979 ◽  
Author(s):  
C. H. Sieverding ◽  
M. Stanislas ◽  
J. Snoek
Keyword(s):  
Theoretical Calculations ◽  
Base Pressure ◽  
Test Results ◽  
Pressure Data ◽  
Calculation Methods ◽  
Flow Parameters ◽  
Wide Range ◽  
Pressure Calculation ◽  
Transonic Turbine ◽  
Turbine Cascades

Base pressure data were systematically collected at VKI during recent years on a great variety of cascades operated over a wide range of outlet March numbers. An attempt is made to correlate these data by relating the base pressure to important cascade and flow parameters. Details about the trailing edge flow are obtained by using an enlarged model simulating the overhang section of convergent turbine cascades. The experimental cascade and model test results are compared with theoretical calculations using base pressure calculation methods.

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