scholarly journals Ultra-broadband Optical Gain Engineering in Solution-processed QD-SOA Based on Superimposed Quantum Structure

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Hamed Goli Yousefabad ◽  
Samiye Matloub ◽  
Ali Rostami
Keyword(s):  
Solution Process ◽  
Design Procedure ◽  
Optical Gain ◽  
Optical Amplifier ◽  
Basic Unit ◽  
Synthesis Methods ◽  
Quantum Structure ◽  
Process Technology ◽  
Solution Processed ◽  
General Variation

Abstract In this work, the optical gain engineering of an ultra-broadband InGaAs/AlAs solution-processed quantum dot (QD) semiconductor optical amplifier using superimposed quantum structure is investigated. The basic unit in the proposed structure (QDs) is designed and fabricated using solution-processed methods with considerable cost-effectiveness, fabrication ease, and QDs size tunability up to various limits (0.1 nm up to the desired values), considering suitable synthesis methods. Increasing the number of QDs, the device can span more than 1.02 μm (O, C, S, and L bands) using only one type of material for all QDs, and is not restricted to this limit in case of using more QD groups. Also, it can manipulate the optical gain peak value, spectral coverage, and resonant energy for customized optical windows, among which 1.31 μm and 1.55 μm are simulated as widely-applicable cases for model validation. This makes the device a prominent candidate for ultra-wide-bandwidth and also customized-gain applications in general. Variation impact of homogeneous and inhomogeneous broadenings, injection current and number of QD groups on optical gain are explained in detail. Besides proposing a design procedure for implementation of an ultra-broadband optical gain using superimposed QDs in solution-processed technology, the proposed gain engineering idea using this technology provides practically infinite bandwidth and an easy way to realize. By introducing this idea, one more step is actually taken to approach the effectiveness of solution process technology.

scholarly journals Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 806
Author(s):  
Xiong Chen ◽  
Yu Zhang ◽  
Xiangfeng Guan ◽  
Hao Zhang
Keyword(s):  
Breakdown Strength ◽  
Sol Gel ◽  
Solution Process ◽  
Dielectric Surface ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Process Technology ◽  
High Quality ◽  
Water Contact ◽  
Solution Processed

A high-quality dielectric layer is essential for organic thin-film transistors (OTFTs) operated at a low-power consumption level. In this study, a facile improved technique for the synthesis of solution-processed silica is proposed. By optimizing the synthesis and processing technique fewer pores were found on the surface of the film, particularly no large holes were observable after improving the annealing process, and the improved solution–gelation (sol–gel) SiOx dielectric achieved a higher breakdown strength (1.6 MV/cm) and lower leakage current density (10−8 A/cm2 at 1.5 MV/cm). Consequently, a pentacene based OTFT with a high field effect mobility (~1.8 cm2/Vs), a low threshold voltage (−1.7 V), a steeper subthreshold slope (~0.4 V/dec) and a relatively high on/off ratio (~105) was fabricated by applying a hybrid gate insulator which consisted of improved sol–gel SiOx and polyvinyl phenol (PVP). This could be ascribed to both the high k of SiOx and the smoother, hydrophobic dielectric surface with low trap density, which was proved by atomic force microscopy (AFM) and a water contact angle test, respectively. Additionally, we systematically studied and evaluated the stability of devices in the compressed state. The devices based on dielectric fabricated by conventional sol–gel processes were more susceptible to the curvature. While the improved device presented an excellent mechanic strength, it could still function at the higher bending compression without a significant degradation in performance. Thus, this solution-process technology provides an effective approach to fabricate high-quality dielectric and offers great potential for low-cost, fast and portable organic electronic applications.

High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

2017 ◽  
Vol 5 (35) ◽  
pp. 9138-9145 ◽  
Author(s):  
Zhaobing Tang ◽  
Jie Lin ◽  
Lishuang Wang ◽  
Ying Lv ◽  
Yongsheng Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Solution Process ◽  
Solution Processed ◽  
Light Emitting

High performance top-emitting green quantum dot light-emitting diodes have been developed based on an all-solution process and with a bottom Al anode.

Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Solution Process ◽  
Simple Solution ◽  
Trap States ◽  
Solution Processed ◽  
High Crystallinity ◽  
Transfer Characteristics

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
Solution Processed

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

A novel method to modify the color of VO2-based thermochromic smart films by solution-processed VO2@SiO2@Au core–shell nanoparticles

RSC Advances ◽  
2016 ◽  
Vol 6 (53) ◽  
pp. 47249-47257 ◽  
Author(s):  
Xuanming Lu ◽  
Xiudi Xiao ◽  
Ziyi Cao ◽  
Yongjun Zhan ◽  
Haoliang Cheng ◽  
...  
Keyword(s):  
Au Nanoparticles ◽  
Solution Process ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Solution Processed ◽  
Novel Method ◽  
Core Shell Nanoparticles ◽  
Color Modification

A facile solution process was developed to prepare VO2@SiO2@Au nanoparticles for color modification of VO2-based smart films.

Three-section semiconductor optical amplifier for monitoring of optical gain

1992 ◽  
Vol 4 (11) ◽  
pp. 1258-1260 ◽  
Author(s):  
M.A. Newkirk ◽  
U. Koren ◽  
B.I. Miller ◽  
M.D. Chien ◽  
M.G. Young ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Gain ◽  
Optical Amplifier

Solution-processed AgBiS2 photodetectors from molecular precursors

2020 ◽  
Vol 8 (7) ◽  
pp. 2436-2441
Author(s):  
Li Jiang ◽  
Yuwei Li ◽  
Jiali Peng ◽  
Lihao Cui ◽  
Ruiming Li ◽  
...  
Keyword(s):  
Spectral Response ◽  
Solution Process ◽  
Water Stability ◽  
Solution Processed ◽  
Molecular Precursors ◽  
Fast Speed

AgBiS2-based photodetectors were fabricated via solution-process, and exhibited broadband spectral response, a fast speed of 700 ns and outstanding air, light and water stability.

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