scholarly journals Theoretical investigation on $$\hbox {BeN}_{{2}}$$ monolayer for an efficient bifunctional water splitting catalyst

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
M. R. Ashwin Kishore ◽  
R. Varunaa ◽  
Amirhossein Bayani ◽  
Karin Larsson

AbstractThe search for an active, stable, and abundant semiconductor-based bifunctional catalysts for solar hydrogen production will make a substantial impact on the sustainable development of the society that does not rely on fossil reserves. The photocatalytic water splitting mechanism on a $$\hbox {BeN}_{{2}}$$ BeN 2 monolayer has here been investigated by using state-of-the-art density functional theory calculations. For all possible reaction intermediates, the calculated changes in Gibbs free energy showed that the oxygen evolution reaction will occur at, and above, the potential of 2.06 V (against the NHE) as all elementary steps are exergonic. In the case of the hydrogen evolution reaction, a potential of 0.52 V, or above, was required to make the reaction take place spontaneously. Interestingly, the calculated valence band edge and conduction band edge positions for a $$\hbox {BeN}_{{2}}$$ BeN 2 monolayer are located at the potential of 2.60 V and 0.56 V, respectively. This indicates that the photo-generated holes in the valence band can oxidize water to oxygen, and the photo-generated electrons in the conduction band can spontaneously reduce water to hydrogen. Hence, the results from the present theoretical investigation show that the $$\hbox {BeN}_{{2}}$$ BeN 2 monolayer is an efficient bifunctional water-splitting catalyst, without the need for any co-catalyst.

RSC Advances ◽  
2019 ◽  
Vol 9 (20) ◽  
pp. 11377-11384 ◽  
Author(s):  
Kaili Wei ◽  
Baolai Wang ◽  
Jiamin Hu ◽  
Fuming Chen ◽  
Qing Hao ◽  
...  

It's highly desired to design an effective Z-scheme photocatalyst with excellent charge transfer and separation, a more negative conduction band edge (ECB) than O2/·O2− (−0.33 eV) and a more positive valence band edge (EVB) than ·OH/OH− (+2.27 eV).


2015 ◽  
Vol 112 (45) ◽  
pp. 13774-13778 ◽  
Author(s):  
Won Jun Jo ◽  
Hyun Joon Kang ◽  
Ki-Jeong Kong ◽  
Yun Seog Lee ◽  
Hunmin Park ◽  
...  

Through phase transition-induced band edge engineering by dual doping with In and Mo, a new greenish BiVO4 (Bi1-XInXV1-XMoXO4) is developed that has a larger band gap energy than the usual yellow scheelite monoclinic BiVO4 as well as a higher (more negative) conduction band than H+/H2 potential [0 VRHE (reversible hydrogen electrode) at pH 7]. Hence, it can extract H2 from pure water by visible light-driven overall water splitting without using any sacrificial reagents. The density functional theory calculation indicates that In3+/Mo6+ dual doping triggers partial phase transformation from pure monoclinic BiVO4 to a mixture of monoclinic BiVO4 and tetragonal BiVO4, which sequentially leads to unit cell volume growth, compressive lattice strain increase, conduction band edge uplift, and band gap widening.


2011 ◽  
Vol 1329 ◽  
Author(s):  
K. Xiong ◽  
S. Sobhani ◽  
R. P. Gupta ◽  
W. Wang ◽  
B. E. Gnade ◽  
...  

ABSTRACTWe investigate the impact of various dopants (Na, Ag, Cd, Zn, Al, Ga, In, Tl, Ge, and Sn) on the electronic structure of Mg2Si by first principles calculations using a hybrid functional that does not need a band gap correction. We find that for Na and Ge in Mg2Si, the impurity-induced states do not affect the density of states at both edges of the valence band and the conduction band. Ag- and Sn affect slightly the density of states at the valence band edge, while Cd and Zn affect slightly the density of state at the conduction band edge. Al and In could modify significantly the density of states at the conduction band edge. Ga introduces states just at the bottom of the conduction band. Tl introduces states in the band gap. This study provides useful information on optimizing the thermoelectric efficiency of Mg2Si.


1991 ◽  
Vol 219 ◽  
Author(s):  
Nobuhiro Hata ◽  
Sigurd Wagner

ABSTRACTWe report the determination of the distribution of occupied defect states in hydrogenated amorphous silicon from the deconvolution of constant photocurrent measurement (CPM) spectra, and the modelling of the distribution with the defect pool.The CPM spectra were taken on undoped a-Si:H samples either in their as-grown state, in the annealed state, after quenching from high temperature, or after light-soaking. The spectra were deconvoluted to account for transitions from deep levels and from valence band tail states to a conduction band assumed to have a sharp edge. As-grown or annealed-state samples show a peak at 1.0 eV (0.2 eV FWHM) below the conduction band edge. Assuming a mobility gap of 1.9 eV, this peak lies 0.9 eV above the valence band edge. We ascribe this peak to the Do/+ transition. CPM spectra of light-soaked and thermally quenched samples show shifts in the peak position and increases in die peak height in accordance with the defect pool model. The model calculations agree with the CPM results, so that the applicability of CPM spectral analysis to obtaining detailed values of defect pool parameters is demonstrated.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Ching-Hwa Ho ◽  
Tien-Yao Hsu ◽  
Luthviyah Choirotul Muhimmah

AbstractBand-edge excitons of few-layer nickel phosphorous trisulfide (NiPS3) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300 K. Prominent μTR features of the A exciton series and B are simultaneously detected near the band edge of NiPS3. The A exciton series contains two sharp A1 and A2 levels and one threshold-energy-related transition (direct gap, E∞), which are simultaneously detected at the lower energy side of NiPS3. In addition, one broadened B feature is present at the higher energy side of few-layer NiPS3. The A series excitons may correlate with majorly d-to-d transition in the Rydberg series with threshold energy of E∞ ≅ 1.511 eV at 10 K. The binding energy of A1 is about 36 meV, and the transition energy is A1 ≅ 1.366 eV at 300 K. The transition energy of B measured by μTR is about 1.894 eV at 10 K. The excitonic series A may directly transit from the top of valence band to the conduction band of NiPS3, while the B feature might originate from the spin-split-off valence band to the conduction band edge. The direct optical gap of NiPS3 is ~1.402 eV at 300 K, which is confirmed by μTR and transmittance experiments.


2019 ◽  
Vol 33 (06) ◽  
pp. 1950058 ◽  
Author(s):  
Kailin Wang ◽  
Dan Liang ◽  
Yang Li ◽  
Shumin Wang ◽  
Ming Lei ◽  
...  

Electronic band structures of [Formula: see text] have been theoretically studied by using Conduction Band Anticrossing (CBAC) model and Valence Band Anticrossing model (VBAC) in conjugation with [Formula: see text] method. This mathematical model’s manifestation is a 16 band Hamiltonian matrix. Our results reveal that the addition of Bi and N to InP causes substantial reduction of band gap, and the conduction band offset is greater than valence band offset. It can provide better electronic confinement and improve the temperature-insensitive characteristics for optoelectronic devices. Material compositions and band gap under various strain conditions have also been added in our calculation. By adjusting the concentration of Bi and N, we obtained a strong control of conduction band edge and valence band edge, which increases the flexibility of design InPBiN/InP structures.


2006 ◽  
Vol 74 (24) ◽  
Author(s):  
M. Güngerich ◽  
P. J. Klar ◽  
W. Heimbrodt ◽  
G. Weiser ◽  
J. F. Geisz ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 705
Author(s):  
Lin Ju ◽  
Jingzhou Qin ◽  
Liran Shi ◽  
Gui Yang ◽  
Jing Zhang ◽  
...  

For the emerging Janus transition metal dichalcogenides (TMD) layered water-splitting photocatalysts, stacking the monolayers to form bilayers has been predicted to be an effective way to improve their photocatalytic performances. To achieve this, the stacking pattern plays an important role. In this work, by means of the density functional theory calculations, we comprehensively estimate energetical stability, light absorption and redox capacity of Janus WSSe bilayer with different stacking patterns. Unfortunately, the Janus WSSe bilayer with the most stable configuration recover the out-of-plane symmetry, which is not in favor of the photocatalytic reactions. However, rolling the Janus WSSe bilayer into double-walled nanotube could stabilize the appropriate stacking pattern with an enhanced instinct dipole moment. Moreover, the suitable band edge positions, high visible light absorbance, outstanding solar-to-hydrogen efficiency (up to 28.48%), and superior carrier separation promise the Janus WSSe double-walled nanotube the potential for the photocatalytic water-splitting application. Our studies not only predict an ideal water-splitting photocatalyst, but also propose an effective way to improve the photocatalytic performances of Janus layered materials.


2016 ◽  
Vol 4 (29) ◽  
pp. 11498-11506 ◽  
Author(s):  
Taehun Lee ◽  
Yonghyuk Lee ◽  
Woosun Jang ◽  
Aloysius Soon

Using first-principles density-functional theory calculations, we investigate the advantage of using h-WO3 (and its surfaces) over the larger band gap γ-WO3 phase for the anode in water splitting. We demonstrate that h-WO3 is a good alternative anode material for optimal water splitting efficiencies.


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